Projection optical system and projection exposure apparatus
Abstract
In the projection optical system that projects an image of the first object onto the second object with a fixed reduction ratio and a projection aligner equipped therewith, said projection optical system comprises, viewed from said first object side, in order of succession, the first group of lenses with positive refractive power, and the second group of lenses virtually consists of afocal system, and the third group of lens with positive refractive power, and if the focal length of the overall system is represented by F, the projection magnification ratio of said projection optical system is represented by B, the distance between said first object and said second object is represented by L, and when a ray from the second object side of said projection optical system that is parallel to the optical axis of said projection optical system is incident on said projection optical system, a distance between a point where an extension on the first object side of said ray intercepts the optical axis and said first object plane is represented by e, and a height of said ray on said first object from the optical axis of said projection optical system, when said ray, coming through said projection optical system, reaches said first object is represented by h, then the following conditions should be satisfied: 1.8≦|F/(B·L)| |h/e|≦3/1000.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1. A projection optical system that projects an image of an object in an object surface onto an image surface with a predetermined reduction magnification comprising, in light path order from said object surface:
a first group of lenses with positive refractive power, said first group including at least two positive lenses;
a second group of lenses forming an approximately afocal system, said second group including, in light path order from said object surface,
a first subgroup of lenses with negative refractive power, said first subgroup including at least two negative lenses,
a second subgroup of lenses with positive refractive power, said second subgroup including at least four positive lenses, and
a third subgroup of lenses with negative refractive power, said third subgroup including at least two negative lenses; and
a third group of lenses with positive refractive power, said third group including at least two positive lenses;
wherein:
said projection optical system has an optical axis,
said projection optical system has a focal length F,
said projection optical system has a projection magnification B,
said object surface and said image surface are separated by a distance L,
a ray from said image surface that is parallel to said optical axis and is incident on said projection optical system emerges from said projection optical system along a path and encounters said object surface at a height h from said optical axis,
said ray has an extension along said path, which extension crosses said optical axis at a distance e from said object surface,
1.8≦|F/(B·L)|,
and
|h/e|≦3/1000.
2. The projection optical system of claim 1 wherein:
a maximum height of the object from said optical axis is represented by H; and
|B•H/F|≦8/1000.
3. The projection optical system of claim 2 wherein:
F•h/(B•H•e)≦4.
4. The projection optical system of claim 3 wherein:
said first group of lenses has a focal length f 1 ;
said third group of lenses has a focal length f 3 ; and
0.80≦|f 3 /f 1 |≦1.5.
5. The projection optical system of claim 4 wherein:
0.05≦f 1 /L≦0.3.
6. The projection optical system of claim 5 wherein:
0.03≦H/L≦0.2.
7. The projection optical system of claim 1 wherein at least one of said first, second, and third groups of lenses includes an aspherical lens.
8. The projection optical system of claim 1 wherein:
said first subgroup of lenses has a focal length f 21 ;
said second subgroup of lenses has a focal length f 22 ; and
1.5≦|f 22 /f 21 |≦5.
9. The projection optical system of claim 1 wherein:
said third subgroup of lenses has a focal length f 23 ; and
0.02≦|f 23 /L|≦0.10.
10. The projection optical system of claim 9 wherein:
said first group of lenses, said first subgroup of lenses in said second group of lenses, and said second subgroup of lenses in said second group of lenses have a composite focal length f a ; and
4≦|f a /f 23 |.
11. The projection optical system of claim 10 wherein:
the i th subgroup of lenses of said second group of lenses, in light path order from said object surface, has a focal length f 2i ; and
−50≦(L/f 1 )+(L/f 3 )+Σ(L/f 2i )≦0.5.
12. The projection optical system of claim 1 wherein::
said second subgroup of lenses comprises at least two biconcave lenses.
13. The projection optical system of claim 12 wherein:
the paraxial marginal ray from the axial object point on said object surface enters said first group of lenses at an angle of incidence u 1 ;
the paraxial marginal ray from the axial object point on said object surface enters said second group of lenses at an angle of incidence u 2 ;
the paraxial marginal ray from the axial object point on said object surface emerges from said second group of lenses at an angle of emergence u 2 ′;
the paraxial marginal ray from the axial object point on said object surface emerges from said third group of lenses at an angle of emergence U 3 ′;
|u 2 /u 1 |≦0.5;
and
|u 2 ′/u 3 ′|≦0.5.
14. The projection optical system of claim 13 wherein:
said second group of lenses has a focal length f 2 ;
said third group of lenses has a focal length f 3 ;
|f 2 |/f 1 >1;
and
|f 2 |/f 3 >1.
15. The projection optical system of claim 1 wherein said second group of lenses further comprises a fourth subgroup of lenses with positive refractive power.
16. The projection optical system of claim 15 wherein said fourth subgroup of lenses comprises at least two positive lenses.
17. The projection optical system of claim 1 wherein:
said first group of lenses has a focal length f 1 ;
said third group of lenses has a focal length f 3 ; and
0.80≦|f 3 /f 1 |≦1.5.
18. The projection optical system of claim 17 wherein:
0.05≦f 1 /L≦0.3.
19. The projection optical system of claim 18 wherein:
a maximum height of the object from said optical axis is represented by H; and
0.03≦H/L≦0.2.
20. The projection optical system of claim 8 wherein:
said third subgroup of lenses has a focal length f 23 ; and
0.02≦|f 23 /L|≦0.10.
21. The projection optical system of claim 20 wherein:
said first group of lenses, said first subgroup of lenses in said second group of lenses, and said second subgroup of lenses in said second group of lenses have a composite focal length f a ; and
4≦|f a /f 23 |.
22. The projection optical system of claim 21 wherein:
the i th subgroup of lenses of said second group of lenses, in light path order from said object surface, has a focal length f 2i ; and
−50≦(L/f 1 )+(L/f 1 )+Σ(L/f 2i )≦0.5.
23. The projection optical system of claim 1 wherein:
said first group of lenses, said first subgroup of lenses in said second group of lenses, and said second subgroup of lenses in said second group of lenses have a composite focal length fa; and
4≦|fa/f 23 |.
24. The projection optical system of claim 23 wherein:
the i th subgroup of lenses of said second group of lenses, in light path order from said object surface, has a focal length f 2i ; and
−50≦(L/f 1 )+(L/f 3 )+Σ(L/f 2i )≦0.5.
25. The projection optical system of claim 1 wherein:
the i th subgroup of lenses of said second group of lenses, in light path order from said object surface, has a focal length f 21 ; and
−50≦(L/f 1 )+(L/f 3 )+Σ(L/f 2i )≦0.5.
26. An exposure method for exposing a predetermined pattern formed on a mask onto a substrate by using the projection optical system of claim 1 , the method comprising the steps of:
illuminating the mask in said object surface with light of a predetermined exposure wavelength; and
projecting an image of said pattern formed on said mask onto said substrate in said image surface through said projection optical system.
27. The exposure method of claim 26 wherein said predetermined pattern formed on said mask is an integrated circuit pattern.
28. An exposure method for exposing a predetermined pattern formed on a mask onto a substrate by using the projection optical system of claim 6 , the method comprising the steps of:
illuminating the mask in said object surface with light of a predetermined exposure wavelength; and
projecting an image of said pattern formed on said mask onto said substrate in said image surface through said projection optical system.
29. The exposure method of claim 28 wherein said predetermined pattern formed on said mask is an integrated circuit pattern.
30. An exposure method for exposing a predetermined pattern formed on a mask onto a substrate by using the projection optical system of claim 11 , the method comprising the steps of:
illuminating the mask in said object surface with light of a predetermined exposure wavelength; and
projecting an image of said pattern formed on said mask onto said substrate in said image surface through said projection optical system.
31. The exposure method of claim 30 wherein said predetermined pattern formed on said mask is an integrated circuit pattern.
32. An exposure method for exposing a predetermined pattern formed on a mask onto a substrate by using the projection optical system of claim 14 , the method comprising the steps of:
illuminating the mask in said object surface with light of a predetermined exposure wavelength; and
projecting an image of said pattern formed on said mask onto said substrate in said image surface through said projection optical system.
33. The exposure method of claim 32 wherein said predetermined pattern formed on said mask is an integrated circuit pattern.
34. An exposure method for exposing a predetermined pattern formed on a mask onto a substrate by using the projection optical system of claim 16 , the method comprising the steps of:
illuminating the mask in said object surface with light of a predetermined exposure wavelength; and
projecting an image of said pattern formed on said mask onto said substrate in said image surface through said projection optical system.
35. The exposure method of claim 34 wherein said predetermined pattern formed on said mask is an integrated circuit pattern.
36. An exposure method for exposing a predetermined pattern formed on a mask onto a substrate by using the projection optical system of claim 19 , the method comprising the steps of:
illuminating the mask in said object surface with light of a predetermined exposure wavelength; and
projecting an image of said pattern formed on said mask onto said substrate in said image surface through said projection optical system.
37. The exposure method of claim 36 wherein said predetermined pattern formed on said mask is an integrated circuit pattern.
38. An exposure method for exposing a predetermined pattern formed on a mask onto a substrate by using the projection optical system of claim 22 , the method comprising the steps of:
illuminating the mask in said object surface with light of a predetermined exposure wavelength; and
projecting an image of said pattern formed on said mask onto said substrate in said image surface through said projection optical system.
39. The exposure method of claim 38 wherein said predetermined pattern formed on said mask is an integrated circuit pattern.
40. An exposure method for exposing a predetermined pattern formed on a mask onto a substrate by using the projection optical system of claim 24 , the method comprising the steps of:
illuminating the mask in said object surface with light of a predetermined exposure wavelength; and
projecting an image of said pattern formed on said mask onto said substrate in said image surface through said projection optical system.
41. The exposure method of claim 40 wherein said predetermined pattern formed on said mask is an integrated circuit pattern.
42. An exposure method for exposing a predetermined pattern formed on a mask onto a substrate by using the projection optical system of claim 7 , the method comprising the steps of:
illuminating the mask in said object surface with light of a predetermined exposure wavelength; and
projecting an image of said pattern formed on said mask onto said substrate in said image surface through said projection optical system.
43. The exposure method of claim 42 wherein said predetermined pattern formed on said mask is an integrated circuit pattern.
44. Exposure apparatus comprising:
an illumination system that illuminates a first object having an object surface on which a fixed pattern is formed;
a projection optical system which projects an image of said fixed pattern onto an image surface on a second object;
a first supporting unit that supports said first object;
a second supporting unit that supports said second object; and
said projection optical system comprising, in light path order from said object surface:
a first group of lenses with positive refractive power, said first group including at least two positive lenses;
a second group of lenses forming an approximately afocal system, said second group including, in light path order from said object surface,
a first subgroup of lenses with negative refractive power, said first subgroup including at least two negative lenses,
a second subgroup of lenses with positive refractive power, said second subgroup including at least four positive lenses, and
a third subgroup of lenses with negative refractive power, said third subgroup including at least two negative lenses; and
a third group of lenses with positive refractive power, said third group including at least two positive lenses;
wherein:
said projection optical system has an optical axis,
said projection optical system has a focal length F.
said projection optical system has a projection magnification B,
said object surface and said image surface are separated by a distance L,
a ray from said image surface that is parallel to said optical axis and is incident on said projection optical system emerges from said projection optical system along a path and encounters said object surface at a height h from said optical axis,
said ray has an extension along said path, which extension crosses said optical axis at a distance e from said object surface,
1. 8≦|F/(B·L)|, and
|h/e|≦3/1000.
45. The exposure apparatus of claim 44 wherein said second group of lenses further comprises a fourth subgroup of lenses with positive refractive power.
46. The exposure apparatus of claim 45 wherein said fourth subgroup of lenses comprises at least two positive lenses.
47. The exposure apparatus of claim 44 wherein:
a maximum height of the object from said optical axis is represented by H; and
|B•H/F|≦8/1000.
48. The exposure apparatus of claim 44 wherein:
F•h/(B•H•e)≦4.
49. The exposure apparatus of claim 44 wherein:
said first group of lenses has a focal length f 1 ;
said third group of lenses has a focal length f 3 ; and
0.80≦|f 3 /f 1 |≦1.5.
50. The exposure apparatus of claim 44 wherein: 0.05≦f 1 /L≦0.3.
51. The exposure apparatus of claim 44 wherein: 0.03≦H/L≦0.2.
52. The exposure apparatus of claim 44 wherein at least one of said first, second, and third groups of lenses in said projection optical system includes an aspherical lens.
53. A projection optical system that projects an image of an object in an object surface onto an image surface with a predetermined reduction magnification comprising, in light path order from said object surface:
a first group of lenses with positive refractive power, said first group including at least two positive lenses;
a second group of lenses forming an approximately afocal system, said second group including, in light path order from said object surface,
a first subgroup of lenses with negative refractive power, said first subgroup including at least two negative lenses,
a second subgroup of lenses with positive refractive power, said second subgroup including at least four positive lenses, and
a third subgroup of lenses with negative refractive power, said third subgroup including at least two negative lenses; and
a third group of lenses with positive refractive power, said third group including at least two positive lenses;
wherein at least one of said first, second, and third groups of lenses includes an aspherical lens.
54. An exposure method for exposing a predetermined pattern formed on a mask onto a substrate by using the projection optical system according to claim 53 , the method comprising the steps of:
illuminating the mask in said object surface with light of a predetermined exposure wavelength; and
projecting an image of said pattern formed on said mask onto said substrate in said image surface through said projection optical system.
55. The exposure method of claim 54 wherein said predetermined pattern formed on said mask is an integrated circuit pattern.
56. Exposure apparatus comprising the projection optical system according to claim 53 for exposing a predetermined pattern formed on a mask onto a substrate through the projection optical system, the exposure apparatus comprising:
an illumination system that illuminates the mask in said object surface with light of a predetermined exposure wavelength;
a first supporting unit that supports said mask; and
a second supporting unit that supports said substrate.
57. The projection optical system of claim 53 wherein said second group of lenses further comprises a fourth subgroup of lenses with positive refractive power, said fourth subgroup including at least two positive lenses.
58. An exposure method for exposing a predetermined pattern formed on a mask onto a substrate by using the projection optical system according to claim 57 , the method comprising the steps of:
illuminating the mask in said object surface with light of a predetermined exposure wavelength; and
projecting an image of said pattern formed on said mask onto said substrate in said image surface through said projection optical system.
59. The exposure method of claim 58 wherein said predetermined pattern formed on said mask is an integrated circuit pattern.
60. Exposure apparatus comprising the projection optical system according to claim 57 for exposing a predetermined pattern formed on a mask onto a substrate through the projection optical system, the exposure apparatus comprising:
an illumination system that illuminates the mask in said object surface with light of a predetermined exposure wavelength;
a first supporting unit that supports said mask; and
a second supporting unit that supports said substrate.
61. The projection optical system of claim 57 wherein:
said object surface and said image surface are separated by a distance L;
said first group of lenses has a focal length f 1 ; and
0.05≦f 1 /L≦0.3.
62. An exposure method for exposing a predetermined pattern formed on a mask onto a substrate by using the projection optical system according to claim 61 , the method comprising the steps of:
illuminating the mask in said object surface with light of a predetermined exposure wavelength; and
projecting an image of said pattern formed on said mask onto said substrate in said image surface through said projection optical system.
63. The exposure method of claim 62 wherein said predetermined pattern formed on said mask is an integrated circuit pattern.
64. Exposure apparatus comprising the projection optical system according to claim 61 for exposing a predetermined pattern formed on a mask onto a substrate through the projection optical system, the exposure apparatus comprising:
an illumination system that illuminates the mask in said object surface with light of a predetermined exposure wavelength;
a first supporting unit that supports said mask; and
a second supporting unit that supports said substrate.
65. The projection optical system of claim 53 , wherein:
said aspherical lens has a rotationally symmetric aspherical surface with respect to an optical axis of said aspherical lens; and
said rotationally symmetric aspherical surface is formed as a consecutive refractive surface.
66. An exposure method for exposing a predetermined pattern formed on a mask onto a substrate by using the projection optical system according to claim 65 , the method comprising the steps of:
illuminating the mask in said object surface with light of a predetermined exposure wavelength; and
projecting an image of said pattern formed on said mask onto said substrate in said image surface through said projection optical system.
67. The exposure method of claim 66 wherein said predetermined pattern formed on said mask is an integrated circuit pattern.
68. Exposure apparatus comprising the projection optical system according to claim 65 for exposing a predetermined pattern formed on a mask onto a substrate through the projection optical system, the exposure apparatus comprising:
an illumination system that illuminates the mask in said object surface with light of a predetermined exposure wavelength;
a first supporting unit that supports said mask; and
a second supporting unit that supports said substrate.
69. The projection optical system of claim 65 , wherein:
said first subgroup of lenses has a focal length f 21 ;
said second subgroup of lenses has a focal length f 22 ; and
1.5≦|f 22 /f 21 |≦5.
70. An exposure method for exposing a predetermined pattern formed on a mask onto a substrate by using the projection optical system according to claim 69 , the method comprising the steps of:
illuminating the mask in said object surface with light of a predetermined exposure wavelength; and
projecting an image of said pattern formed on said mask onto said substrate in said image surface through said projection optical system.
71. The exposure method of claim 70 wherein said predetermined pattern formed on said mask is an integrated circuit pattern.
72. Exposure apparatus comprising the projection optical system according to claim 69 for exposing a predetermined pattern formed on a mask onto a substrate through the projection optical system, the exposure apparatus comprising:
an illumination system that illuminates the mask in said object surface with light of a predetermined exposure wavelength;
a first supporting unit that supports said mask; and
a second supporting unit that supports said substrate.
73. The projection optical system of claim 69 , wherein:
said first group of lenses has a focal length f 1 ;
said object surface and said image surface are separated by a distance L; and
0.05≦f 1 /L≦0.3.
74. An exposure method for exposing a predetermined pattern formed on a mask onto a substrate by using the projection optical system according to claim 73 , the method comprising the steps of:
illuminating the mask in said object surface with light of a predetermined exposure wavelength; and
projecting an image of said pattern formed on said mask onto said substrate in said image surface through said projection optical system.
75. The exposure method of claim 74 wherein said predetermined pattern formed on said mask is an integrated circuit pattern.
76. Exposure apparatus comprising the projection optical system according to claim 73 for exposing a predetermined pattern formed on a mask onto a substrate through the projection optical system, the exposure apparatus comprising:
an illumination system that illuminates the mask in said object surface with light of a predetermined exposure wavelength;
a first supporting unit that supports said mask; and
a second supporting unit that supports said substrate.
77. A projection optical system that projects an image of a pattern formed on a reticle onto a substrate with a predetermined magnification comprising, in the light path order from the reticle:
a first group with positive refractive power, said first group comprising at least two positive lenses;
a second group comprising at least four positive lenses and at least four negative lenses;
a third group positive refractive power, said third group comprising at least two positive lenses; and
at least one aspherical surface included in at least one of said first, second, and/or third group,
wherein the projection optical system has a numerical aperture not less than 0 . 56 .
78. A projection optical system according to claim 77 , wherein said at least one aspherical surface has, substantially, a rotationally symmetric shape about an optical axis.
79. A projection optical system according to claim 77 , wherein the at least four negative lenses in said second group have concave surfaces formed opposite to each other.
80. A projection optical system according to claim 77 , wherein said at least four negative lenses in said second group comprise concave surfaces, and
wherein the at least four negative lenses of said second group comprise
a first pair of negative lenses wherein the concave surfaces are formed opposed to each other, and
a second pair of negative lenses wherein the concave surfaces are formed opposed to each other.
81. A projection optical system according to claim 77 , wherein the at least two positive lenses of said first group are formed with convex surfaces facing the substrate.
82. A projection optical system according to claim 77 , wherein the at least two positive lenses of said third group are formed with convex surfaces facing the reticle.
83. A projection optical system according to claim 77 , wherein said at least one aspherical surface includes an aspherical refractive surface.
84. A projection optical system according to claim 77 , wherein the lenses in said first, second, and third group comprise non- cemented single lenses.
85. A projection optical system according to claim 79 , wherein the at least two positive lenses in said third group have convex surfaces facing the reticle.
86. A projection optical system according to claim 85 , wherein said at least one aspherical surface has, substantially, a rotationally symmetric shape about an optical axis.
87. A projection optical system according to claim 85 , wherein the at least two positive lenses in said first group have convex surfaces facing the reticle.
88. A projection optical system according to claim 87 , wherein said at least one aspherical surface has, substantially, a rotationally symmetric shape about an optical axis.
89. A projection optical system according to claim 87 , wherein said third group further comprises a negative lens with a concave lens surface facing the substrate.
90. A projection optical system according to claim 89 , wherein said at least one aspherical surface has, substantially, a rotationally symmetric shape about an optical axis.
91. A projection optical system according to claim 77 , wherein the lenses in said first, second, and third group comprise non- cemented single lenses.
92. An exposure apparatus comprising:
a projection optical system that projects a pattern image of a reticle onto a substrate, according to
claim 77
;
an illumination system that illuminates the reticle with a light having a predetermined wavelength;
a first stage that supports the reticle; and
a second stage that supports the substrate.
93. An exposure apparatus comprising:
a projection optical system that projects a pattern image of a reticle on a substrate, according to
claim 78
;
an illumination system that illuminates the reticle with a light having a predetermined wavelength;
a first stage that supports the reticle; and
a second stage that supports the substrate.
94. An exposure apparatus comprising:
a projection optical system that projects a pattern image of a reticle on a substrate, according to
claim 79
;
an illumination system that illuminates the reticle with a light having a predetermined wavelength;
a first stage that supports the reticle; and
a second stage that supports the substrate.
95. An exposure apparatus comprising:
a projection optical system that projects a pattern image of a reticle on a substrate, according to
claim 80
;
an illumination system that illuminates the reticle with a light having a predetermined wavelength;
a first stage that supports the reticle; and
a second stage that supports the substrate.
96. An exposure apparatus comprising:
a projection optical system that projects a pattern image of a reticle on a substrate, according to
claim 81
;
an illumination system that illuminates the reticle with a light having a predetermined wavelength;
a first stage that supports the reticle; and
a second stage that supports the substrate.
97. An exposure apparatus comprising:
a projection optical system that projects a pattern image of a reticle on a substrate, according to
claim 82
;
an illumination system that illuminates the reticle with a light having a predetermined wavelength;
a first stage that supports the reticle; and
a second stage that supports the substrate.
98. An exposure apparatus comprising:
a projection optical system that projects a pattern image of a reticle on a substrate, according to
claim 83
;
an illumination system that illuminates the reticle with a light having a predetermined wavelength;
a first stage that supports the reticle; and
a second stage that supports the substrate.
99. An exposure apparatus comprising:
a projection optical system that projects a pattern image of a reticle on a substrate, according to
claim 86
;
an illumination system that illuminates the reticle with a light having a predetermined wavelength;
a first stage that supports the reticle; and
a second stage that supports the substrate.
100. An exposure apparatus comprising:
a projection optical system that projects a pattern image of a reticle on a substrate, according to
claim 88
;
an illuminating system that illuminates the reticle with a light having a predetermined wavelength;
a first stage that supports the reticle; and
a second stage that supports the substrate.
101. An exposure apparatus comprising:
a projection optical system that projects a pattern image of a reticle on a substrate, according to
claim 90
;
an illumination system that illuminates the reticle with a light having a predetermined wavelength;
a first stage that supports the reticle; and
a second stage that supports the substrate.
102. An exposure method of projecting a pattern of a reticle on a substrate comprising:
illuminating the reticle with a light having a predetermined wavelength; and
projecting a pattern image of the reticle onto the substrate through a projection optical system according to
claim 77
.
103. An exposure method of projecting a pattern of a reticle on a substrate comprising:
illuminating the reticle with a light having a predetermined wavelength; and
projecting a pattern image of the reticle onto the substrate through a projection optical system according to
claim 78
.
104. An exposure method of projecting a pattern of a reticle on a substrate comprising:
illuminating the reticle with a light having a predetermined wavelength; and
projecting a pattern image of the reticle onto the substrate through a projection optical system according to
claim 79
.
105. An exposure method of projecting a pattern of a reticle on a substrate comprising:
illuminating the reticle with a light having a predetermined wavelength; and
projecting a pattern image of the reticle onto the substrate through a projection optical system according to
claim 80
.
106. An exposure method of projecting a pattern of a reticle on a substrate comprising:
illuminating the reticle with a light having a predetermined wavelength; and
projecting a pattern image of the reticle onto the substrate through a projection optical system according to
claim 81
.
107. An exposure method of projecting a pattern of a reticle on a substrate comprising:
illuminating the reticle with a light having a predetermined wavelength; and
projecting a pattern image of the reticle onto the substrate through a projection optical system according to
claim 82
.
108. An exposure method of projecting a pattern of a reticle on a substrate comprising:
illuminating the reticle with a light having a predetermined wavelength; and
projecting a pattern image of the reticle onto the substrate through a projection optical system according to
claim 83
.
109. An exposure method of projecting a pattern of a reticle on a substrate comprising:
illuminating the reticle with a light having a predetermined wavelength; and
projecting a pattern image of the reticle onto the substrate through a projection optical system according to
claim 86
.
110. An exposure method of projecting a pattern of a reticle on a substrate comprising:
illuminating the reticle with a light having a predetermined wavelength; and
projecting a pattern image of the reticle onto the substrate through a projection optical system according to
claim 88
.
111. An exposure method of projecting a pattern of a reticle on a substrate comprising:
illuminating the reticle with a light having a predetermined wavelength; and
projecting a pattern image of the reticle onto the substrate through a projection optical system according to
claim 90
.
112. A projection optical system that projects an image of a pattern formed on a reticle onto a substrate comprising:
a first group with positive refractive power disposed in an optical path between the reticle and the substrate, said first group comprising at least two positive lenses;
a second group disposed in said optical path between said first group and the substrate, said second group comprising
a negative sub - group with negative refractive power which comprises at least two negative lenses,
a positive sub - group with positive refractive power which comprises at least two positive lenses, and
a stop arranged between the at least two postive lenses;
a third group with positive refractive power disposed in said optical path between said second group and the substrate, said third group comprising at least two positive lenses; and
at least one aspherical surface included in at least one of said first, second, and/or third group,
wherein
the two negative lenses in said negative sub - group include concave surfaces formed opposed to each other, and
the projection optical system has a numerical aperture not less than 0 . 56 .
113. A projection optical system according to claim 112 , wherein said at least one aspherical surface has, substantially, a rotationally symmetric shape about an optical axis.
114. An exposure apparatus comprising:
a projection optical system that projects a pattern image of a reticle on a substrate, according to
claim 112
;
an illumination system that illuminates the reticle with a light having a predetermined wavelength;
a first stage that supports the reticle; and
a second stage that supports the substrate.
115. An exposure method of projecting a pattern of a reticle on a substrate comprising:
illuminating the reticle with a light having a predetermined wavelength; and
projecting a pattern image of the reticle onto the substrate through a projection optical system according to
claim 112
.
116. An exposure apparatus comprising:
a projection optical system that projects a pattern image of a reticle on a substrate, according to
claim 113
;
an illumination system that illuminates the reticle with a light having a predetermined wavelength;
a first stage that supports the reticle; and
a second stage that supports the substrate.
117. An exposure method of projecting a pattern of a reticle on a substrate comprising:
illuminating the reticle with a light having a predetermined wavelength; and
projecting a pattern image of the reticle onto the substrate through a projection optical system according to
claim 113
.
118. A projection optical system that projects an image of an object in an object surface onto an image surface with a predetermined reduction magnification comprising, in light path order from the object surface;
a first group of lenses with positive refractive power, said first group comprising at least two positive lenses;
a first subgroup of lenses with negative refractive power, the first subgroup comprising at least two negative lenses,
a second subgroup of lenses with positive refractive power, the second subgroup comprising at least four positive lenses, and
a third subgroup of lenses with negative refractive power, the third subgroup comprising at least two negative lenses;
a third group of lenses with positive refractive power, said third group comprising at least two positive lenses; and
at least one aspherical surface included in at least one of said first, second, and/or third group of lenses,
wherein the projection optical system has a numerical aperture not less than 0 . 56 .
119. An exposure method for exposing a predetermined pattern formed on a mask onto a substrate comprising:
illuminating the mask in the object surface with light of a predetermined exposure wavelength; and
projecting an image of the predetermined formed on the mask onto the substrate in an image surface through a projection optical system according to
claim 118
.
120. An exposure apparatus comprising:
an illumination system that illuminates a mask in an object surface with a light of a predetermined exposure wavelength;
a projection optical system according to
claim 118
that exposes a predetermined pattern formed on the mask onto a substrate;
a first supporting unit that supports the mask; and
a second supporting unit that supports the substrate.
121. A projection optical system according to claim 118 , wherein said at least one aspherical surface has, substantially, a rotationally symmetric shape about an optical axis.
122. An exposure method for exposing a predetermined pattern formed on a mask onto a substrate comprising:
illuminating the mask in the object surface with a light of a predetermined exposure wavelength; and
projecting image of the predetermined pattern formed on the mask onto the substrate in an image surface through a projection optical system according to
claim 121
.
123. An exposure apparatus comprising:
an illumination system that illuminates a mask in an object surface with a light of predetermined exposure wavelength;
a projection optical system according to
claim 121
to expose a predetermined pattern formed on the mask onto a substrate;
a first supporting unit that supports the mask; and
a second supporting unit that supports the substrate.
124. A projection optical system of claim 118 , wherein said second group of lenses further comprises a fourth subgroup of lenses with positive refractive power, the fourth subgroup comprising at least two positive lenses.
125. An exposure method for exposing a predetermined pattern formed on a mask onto a substrate comprising:
illuminating the mask in an object surface with light of a predetermined exposure wavelength; and
projecting an image of the predetermined pattern formed on the mask onto the substrate in an image surface through a projection optical system according to
claim 124
.
126. An exposure apparatus that exposes a predetermined pattern formed on a mask onto a substrate comprising:
an illumination system that illuminates the mask in an object surface with a light of a predetermined exposure wavelength;
a projection optical system according to
claim 124
to expose the predetermined pattern formed on the mask onto the substrate;
a first supporting unit that supports the mask; and
a second supporting unit that supports the substrate.
127. A projection optical system according to claim 124 , wherein said at least one aspherical surface has, substantially, a rotationally symmetric shape about an optical axis.
128. An exposure method for exposing a predetermined pattern formed on a mask onto a substrate comprising:
illuminating the mask in an object surface with a light of a predetermined exposure wavelength; and
projecting an image of the predetermined pattern formed on the mask onto the substrate in an image surface through a projection optical system according to
claim 127
.
129. An exposure apparatus comprising:
an illumination system that illuminates a mask in an object surface with a light of a predetermined exposure wavelength;
a projection optical system according to
claim 127
to expose a predetermined pattern formed on the mask onto a substrate in an image surface;
a first supporting unit that supports the mask; and
a second supporting unit that supports the substrate.
130. An exposure apparatus comprising:
a projection optical system that projects a pattern formed on a reticle onto a substrate, said projection system being telecentric on a reticle and a substrate side; and
an illumination system designed in accordance with the telecentricity of said projection optical system on the reticle side so as to illuminate the reticle,
wherein said projection optical system has a numerical aperture not less than 0 . 56 and comprises at least one aspherical surface.
131. An exposure apparatus according to claim 130 , wherein the at least one aspherical surface includes an aspherical refractive surface.
132. An exposure apparatus according to claim 131 , wherein the at least one aspherical surface has a substantially rotationally symmetric shape about an optical axis.
133. An exposure means according to claim 130 , wherein said projection system comprises in light path order from the reticle;
a first group with positive refractive power, the first group comprising at least two positive lenses;
a second group comprising at least four positive lenses and at least four negative lenses; and
a third group with positive refractive power, the third group comprising at least two positive lenses.
134. An exposure apparatus according to claim 133 , wherein the at least one aspherical surface is included in at least one of said first, second, and/or third group.
135. An exposure method using an exposure apparatus of claim 130 , comprising:
illuminating a reticle with a light having a predetermined wavelength using the illumination system; and
projecting a pattern of the reticle onto a substrate using the projection system.
136. An exposure method using an exposure apparatus according to claim 131 , comprising:
illuminating a reticle with a light having a predetermined wavelength using the illumination system; and
projecting a pattern of the reticle onto a substrate using the projection system.
137. An exposure method using an exposure apparatus according to claim 132 , comprising:
illuminating a reticle with a light having a predetermined wavelength using the illumination system; and
projecting a pattern of the reticle onto a substrate using the projection system.
138. An exposure method using an exposure apparatus according to claim 133 , comprising:
illuminating a reticle with a light having a predetermined wavelength using the illumination system; and
projecting a pattern of the reticle onto a substrate using the projection system.
139. An exposure method using an exposure apparatus according to claim 134 , comprising:
illuminating a reticle with a light having a predetermined wavelength using the illumination system; and
projecting a pattern of the reticle onto a substrate using the projection system.
140. A method of manufacturing an exposure apparatus comprising:
preparing a projection system that projects a pattern formed on a reticle onto a substrate, said preparing the projection system comprising forming at least one aspherical surface in the projection system with the projection system being telecentric on a reticle and a substrate side and having a numerical aperture not less than 0 . 56 ; and
preparing an illumination system designed in accordance with a telecentricity of the projection system on the reticle side so as to illuminate the reticle.
141. A method according to claim 140 , wherein the at least one aspherical surface includes an aspherical refractive surface.
142. A method according to claim 140 , wherein the at least one aspherical surface has a substantially rotationally symmetric shape about an optical axis.
143. A method according to claim 140 , wherein said preparing the projecting system comprises
arranging a first group with positive refractive power in a light path between the reticle and the substrate, the first group comprising at least two positive lenses;
arranging a second group comprising at least four positive lenses and at least four negative lenses in a light path between the first group and the substrate; and
arranging a third group with positive refractive power in a light path between the second group and the substrate, the third group comprising at least two positive lenses.
144. A method according to claim 143 , wherein the at least one aspherical surface is included in at least one of the first, second, and/or third groups.
145. An exposure method comprising:
preparing a projection system that projects a pattern formed on a reticle onto a substrate, the projection system being telecentric on a reticle side and a substrate side, having a numerical aperture not less than 0 . 56 , and comprising at least one aspherical surface;
preparing an illumination system designed in accordance with a telecentricity of the projection system on the reticle side;
illuminating the reticle using the illumination system; and
projecting a pattern of the reticle onto the substrate using the projection system.
146. An exposure method according to claim 145 , wherein the at least one aspherical surface includes an aspherical refractive surface.
147. An exposure method according to claim 145 , wherein the at least one aspherical surface has a substantially rotationally symmetric shape about an optical axis.
148. An exposure method according to claim 145 , wherein said preparing the projection system comprises
arranging a first group with positive refractive power in a light path between the reticle and the substrate, the first group comprising at least two positive lenses;
arranging a second group comprising at least four positive lenses and at least four negative lenses in a light path between the first group and the substrate; and
arranging a third group with positive refractive power in a light path between the second group and the substrate, the third group comprising at least two positive lenses.
149. An exposure method according to claim 148 , wherein the at least one aspherical surface is included in at least one of the first, second, and/or third groups.
150. An exposure apparatus comprising:
a projection system that projects a pattern formed on a reticle onto a substrate, said projection system comprising an optical performance, said projection system having a numerical aperture not less than 0 . 56 and comprising at least one aspherical surface; and
an illumination system designed in accordance with the optical performance of said projection system so as to illuminate the reticle.
151. An exposure apparatus according to claim 150 , wherein the at least one aspherical surface comprises an aspherical refractive surface.
152. An exposure method comprising:
preparing a projection system that projects a pattern formed on a reticle onto a substrate, the projection system comprising an optical performance, the projection system having a numerical aperture not less than 0 . 56 and comprising at least one aspherical surface;
preparing an illumination system designed in accordance with the optical performance of the projection system so to illuminate system; and
projecting the pattern of the reticle onto the substrate using the projection system.
153. A method according to claim 152 , wherein the at least one aspherical surface comprises an aspherical refractive surface.
154. A method of manufacturing an exposure apparatus comprising:
preparing a projection system that projects a pattern formed on a reticle onto a substrate, the projection system having a numerical aperture not less than 0 . 56 and comprising at least one aspherical surface; and
preparing an illumination system designed in accordance with an optical performance of the projection system to illuminate the reticle.
155. A method according to claim 154 , wherein the at least one aspherical surface comprises an aspherical refractive surface.
156. A projection optical system that projects an image of a pattern formed on a reticle onto a substrate with a predetermined magnification, comprising:
a first group of lenses with a positive refractive power arranged in an optical path between the reticle and the substrate and which comprises at least two positive lenses;
a second group of lenses arranged in an optical path between the reticle and the first group of lenses and which comprises at least four positive lenses and at least four negative lenses; and
at least one aspherical surface included in at least one of the first group and the second group of lenses,
wherein the projection optical system has a numerical aperture not less than 0 . 56 .
157. A projection optical system according to claim 156 , wherein the at least one aspherical surface includes an aspherical refractive surface.
158. A projection optical system according to claim 156 , wherein the at least four negative lenses in the second group of lenses comprise concave surfaces formed opposite to each other.
159. A projection optical system according to claim 158 , wherein the at least two positive lenses in the first group of lenses have convex surfaces facing the reticle.
160. A projection optical system according to claim 159 , wherein the at least one aspherical surface includes an aspherical refractive surface.
161. A projection optical system according to claim 160 , further comprising an additional group of lenses which is arranged in an optical path between the reticle and the second group of lenses and which comprises at least two positive lenses.
162. A projection optical system according to claim 156 , wherein the at least four negative lenses in the second group of lenses comprise a first pair of negative lenses with concave surfaces opposite to each other, and a second pair of negative lenses with concave surfaces opposite to each other.
163. A projection optical system according to claim 156 , wherein the second group of lenses comprises:
a first subgroup of lenses with a negative refractive power arranged in the optical path between the reticle and the first group of lenses and which comprises at least two negative lenses;
a second subgroup of lenses with a positive refractive power arranged in an optical path between the reticle and the first subgroup of lenses and which comprises at least two positive lenses, and
a third subgroup of lenses with a negative refractive power arranged in an optical path between the reticle and the second subgroup of lenses and which comprises at least two negative lenses.
164. A projection optical system according to claim 163 , wherein the second group of lenses further comprises:
an additional subgroup of lenses with a positive refractive power arranged in an optical path between the first subgroup of lenses and the first group of lenses and which comprises at least two positive lenses.
165. A projection optical system according to claim 163 , wherein the third subgroup of lenses comprises concave surfaces opposite to each other.
166. A projection optical system according to claim 165 , wherein the first subgroup of lenses comprises concave surfaces opposite to each other.
167. A projection optical system according to claim 166 , further comprising an additional group of lenses arranged in an optical path between the reticle and the second group of lenses and which comprises at least two positive lenses.
168. A projection optical system according to claim 156 , wherein the at least two positive lenses in the first group of lenses have convex surfaces facing the reticle.
169. A projection optical system according to claim 156 , wherein the lenses in the first and second group of lenses comprise non-cemented lenses.
170. An exposure apparatus comprising:
a projection optical system that projects a pattern image of a reticle onto a substrate, according to
claim 157
;
an illumination system that illuminates the reticle with a light having a predetermined wavelength;
a first stage that supports the reticle; and
a second stage that supports the substrate.
171. An exposure apparatus comprising:
a projection optical system that projects a pattern image of a reticle onto a substrate, according to
claim 158
;
an illumination system that illuminates the reticle with a light having a predetermined wavelength;
a first stage that supports the reticle; and
a second stage that supports the substrate.
172. An exposure apparatus comprising:
a projection optical system that projects a pattern image of a reticle onto a substrate, according to
claim 159
;
an illumination system that illuminates the reticle with a light having a predetermined wavelength;
a first stage that supports the reticle; and
a second stage that supports the substrate.
173. An exposure apparatus comprising:
a projection optical system that projects a pattern image of a reticle onto a substrate, according to
claim 160
;
an illumination system that illuminates the reticle with a light having a predetermined wavelength;
a first stage that supports the reticle; and
a second stage that supports the substrate.
174. An exposure apparatus comprising:
a projection optical system that projects a pattern image of a reticle onto a substrate, according to
claim 162
;
an illumination system that illuminates the reticle with a light having a predetermined wavelength;
a first stage that supports the reticle; and
a second stage that supports the substrate.
175. An exposure apparatus comprising:
a projection optical system that projects a pattern image of a reticle onto a substrate, according to
claim 163
;
an illumination system that illuminates the reticle with a light having a predetermined wavelength;
a first stage that supports the reticle; and
a second stage that supports the substrate.
176. An exposure apparatus comprising:
a projection optical system that projects a pattern image of a reticle onto a substrate, according to
claim 164
;
an illumination system that illuminates the reticle with a light having a predetermined wavelength;
a first stage that supports the reticle; and
a second stage that supports the substrate.
177. An exposure apparatus comprising:
a projection optical system that projects a pattern image of a reticle onto a substrate, according to
claim 165
;
an illumination system that illuminates the reticle with a light having a predetermined wavelength;
a first stage that supports the reticle; and
a second stage that supports the substrate.
178. An exposure apparatus comprising:
a projection optical system that projects a pattern image of a reticle onto a substrate, according to
claim 166
;
an illumination system that illuminates the reticle with a light having a predetermined wavelength;
a first stage that supports the reticle; and
a second stage that supports the substrate.
179. An exposure apparatus comprising:
a projection optical system that projects a pattern image of a reticle onto a substrate, according to
claim 168
;
an illumination system that illuminates the reticle with a light having a predetermined wavelength;
a first stage that supports the reticle; and
a second stage that supports the substrate.
180. An exposure apparatus comprising:
a projection optical system that projects a pattern image of a reticle onto a substrate, according to
claim 156
;
an illumination system that illuminates the reticle with a light having a predetermined wavelength;
a first stage that supports the reticle; and
a second stage that supports the substrate.
181. An exposure method of projecting a pattern of a reticle onto a substrate comprising:
illuminating the reticle with a light having a predetermined wavelength; and
projecting a pattern image of the reticle onto the substrate through a projection optical system according to
claim 157
.
182. An exposure method of projecting a pattern of a reticle onto a substrate comprising:
illuminating the reticle with a light having a predetermined wavelength; and
projecting a pattern image of the reticle onto the substrate through a projection optical system according to
claim 158
.
183. An exposure method of projecting a pattern of a reticle onto a substrate comprising:
illuminating the reticle with a light having a predetermined wavelength; and
projecting a pattern image of the reticle onto the substrate through a projection optical system according to
claim 159
.
184. An exposure method of projecting a pattern of a reticle onto a substrate comprising:
illuminating the reticle with a light having a predetermined wavelength; and
projecting a pattern image of the reticle onto the substrate through a projection optical system according to
claim 160
.
185. An exposure method of projecting a pattern of a reticle onto a substrate comprising:
illuminating the reticle with a light having a predetermined wavelength; and
projecting a pattern image of the reticle onto the substrate through a projection optical system according to
claim 162
.
186. An exposure method of projecting a pattern of a reticle onto a substrate comprising:
illuminating the reticle with a light having a predetermined wavelength; and
projecting a pattern image of the reticle onto the substrate through a projection optical system according to
claim 163
.
187. An exposure method of projecting a pattern of a reticle onto a substrate comprising:
illuminating the reticle with a light having a predetermined wavelength; and
projecting a pattern image of the reticle onto the substrate through a projection optical system according to
claim 164
.
188. An exposure method of projecting a pattern of a reticle onto a substrate comprising:
illuminating the reticle with a light having a predetermined wavelength; and
projecting a pattern image of the reticle onto the substrate through a projection optical system according to
claim 165
.
189. An exposure method of projecting a pattern of a reticle onto a substrate comprising:
illuminating the reticle with a light having a predetermined wavelength; and
projecting a pattern image of the reticle onto the substrate through a projection optical system according to
claim 166
.
190. An exposure method of projecting a pattern of a reticle onto a substrate comprising:
illuminating the reticle with a light having a predetermined wavelength; and
projecting a pattern image of the reticle onto the substrate through a projection optical system according to
claim 168
.
191. An exposure method of projecting a pattern of a reticle onto a substrate comprising:
illuminating the reticle with a light having a predetermined wavelength; and
projecting a pattern image of the reticle onto the substrate through a projection optical system according to
claim 156
.
192. An exposure apparatus according to claim 130 , wherein the projection optical system comprises:
a first group of lenses with a positive refractive power arranged in an optical path between the reticle and the substrate and which comprises at least two positive lenses; and
a second group of lenses arranged in an optical path between the reticle and the first group of lenses and which comprises at least four positive lenses and at least four negative lenses.
193. An exposure apparatus according to claim 192 , wherein the at least one aspherical surface includes an aspherical refractive surface.
194. An exposure method using an exposure apparatus according to claim 193 , comprising:
illuminating a reticle with a light having a predetermined wavelength using the illumination system; and
projecting a pattern of the reticle onto a substrate using the projection optical system.
195. An exposure method using an exposure apparatus according to claim 192 , comprising:
illuminating a reticle with a light having a predetermined wavelength using the illumination system, and
projecting a pattern of the reticle onto a substrate using the projection optical system.
196. A method according to claim 141 , wherein the preparing the projection system comprises:
arranging a first group of lenses with a positive refractive power in an optical path between the reticle and the substrate, the first group of lenses comprising at least two positive lenses; and
arranging a second group of lenses in an optical path between the reticle and the first group of lenses, the second group of lenses comprising at least four negative lenses and at least four positive lenses.
197. A method according to claim 196 , wherein the arranging the second group of lenses comprises:
arranging a first subgroup of lenses with a negative refractive power in the optical path between the reticle and the first group of lenses, the first subgroup of lenses comprising at least two negative lenses:
arranging a second subgroup of lenses with a positive refractive power in an optical path between the reticle and the first subgroup of lenses, the second subgroup of lenses comprising at least two positive lenses; and
arranging a third subgroup of lenses with a negative refractive power in an optical path between the reticle and the second subgroup of lenses, the third subgroup of lenses comprising at least two negative lenses.
198. An exposure apparatus manufactured by the method according to claim 196 .
199. An exposure apparatus manufactured by the method according to claim 197 .
200. An exposure apparatus manufactured by the method according to claim 141 .
201. An exposure apparatus manufactured by the method according to claim 143 .
202. An exposure apparatus manufactured by the method according to claim 144 .
203. An exposure apparatus manufactured by the method according to claim 140 .
204. An exposure method according to claim 148 , wherein the preparing the projection system comprises forming at least one aspherical surface in the projection optical system.
205. An exposure method according to claim 145 , wherein the preparing the projection system comprises:
arranging a first group of lenses with a positive refractive power in an optical path between the reticle and the substrate, the first group of lenses comprising at least two positive lenses; and
arranging a second group of lenses in an optical path between the reticle and the first group of lenses, the second group of lenses comprising at least four negative lenses and at least four positive lenses.
206. An exposure method according to claim 205 , wherein the arranging the second group of lenses comprises:
arranging a first subgroup of lenses with a negative refractive power in the optical path between the reticle and the first group of lenses, the first subgroup of lenses comprising at least two positive lenses;
arranging a second subgroup of lenses with a positive refractive power in an optical path between the reticle and the first subgroup of lenses, the second subgroup of lenses comprising at least two positive lenses; and
arranging a third subgroup of lenses with a negative refractive power in an optical path between the reticle and the second subgroup of lenses, the third subgroup of lenses comprising at least two negative lenses.
207. An exposure method according to claim 206 , wherein the preparing the projection system comprises forming at least one aspherical surface in the projection system.Cited by (0)
No later patents cite this yet.
References (0)
No backward citations on record.