USRE38789EExpiredUtility

Semiconductor wafer having a bottom surface protective coating

77
Assignee: NAT SEMICONDUCTOR CORPPriority: Jan 14, 1998Filed: Dec 17, 2001Granted: Sep 6, 2005
Est. expiryJan 14, 2018(expired)· nominal 20-yr term from priority
H10W 72/07251H10W 72/01331H10W 72/20H10W 46/603H10W 46/601H10W 74/131H10W 74/01H10W 46/00H10W 42/121
77
PatentIndex Score
19
Cited by
19
References
15
Claims

Abstract

Disclosed is a packaged integrated circuit device. The device includes a die having a plurality of electrical contacts on a first surface of the die and a protective film adhered directly to a back surface of the die, the protective film being thick enough to allow laser marking of the protective film without the laser penetrating to the die. In one preferred embodiment, the protective film of the device is a thick film formed by screen printing. In a preferred embodiment, the protective film has a thickness of between about 1.5 and 5 mils. Also, disclosed is a method of fabricating a semiconductor wafer having a wafer substrate with a top surface and a bottom surface and a plurality of dies. In this embodiment, the method includes providing a plurality of dies on the top surface of the wafer substrate, applying a thick film over the bottom surface of the wafer substrate, adhering the thick film to a mounting tape that is not ultraviolet curable, and dicing the wafer to separate the dies. The thick film reduces chipping along edges of the separated dies.

Claims

exact text as granted — not AI-modified
1. A packaged integrated circuit device comprising:
 a die having a plurality of electrical contacts  contact bumps disposed on a first surface of the die; and  
 a protective film adhered directly to a back surface of the die, opposite the first surface, the protective film being thick enough to allow laser marking of the protective film without the laser penetrating to the die,  
 wherein the protective film has a thickness of between about 1.5 and 5 mils.  
 
     
     
       2. The packaged integrated circuit device recited in  claim 1 , wherein the protective film has a thickness between about 2 and 3 mils. 
     
     
       3. The packaged integrated circuit device recited in  claim 1  wherein the protective film is a thick film formed from a material that adheres to a mounting tape that is not an especially adhesive type tape. 
     
     
       4. The packaged integrated circuit device recited in  claim 1  wherein the protective film is a thick film formed from a material that adheres to a mounting tape that is not a UV type tape. 
     
     
       5. A semiconductor wafer comprising:
 a multiplicity of semiconductor dies, each die having a plurality of electrical contacts that are exposed on a first surface of the wafer,  
 a protective thick film adhered directly to a second surface that is opposite to the first surface of the wafer, the protective film being thick enough to allow laser marking of the protective film without the laser penetrating to the die,  
 wherein the protective film has a thickness of between about 1.5 and 5 mils.  
 
     
     
       6. The semiconductor wafer recited in  claim 5 , wherein the protective film has a thickness between about 2 and 3 mils. 
     
     
       7. The packaged integrated circuit of  claim 1  wherein the protective film includes plastic. 
     
     
       8. The packaged integrated circuit of  claim 1  wherein the protective film includes epoxy. 
     
     
       9. The packaged integrated circuit of  claim 1  wherein the protective film includes laser identification markings. 
     
     
       10. The packaged integrated circuit of  claim 1  wherein the protective film is non-metallic. 
     
     
       11. A packaged integrated circuit device comprising:
 a die having a plurality of electrical contacts disposed on a first surface of the die; and    a protective film adhered directly to a back surface of the die, opposite the first surface, the protective film being thick enough to allow laser marking of the protective film without the laser penetrating to the die,    
       wherein the protective film has a thickness between about  1 . 5  and  5  mils and includes laser identification markings. 
     
     
       12. The packaged integrated circuit device of  claim 11  wherein the protective film includes epoxy. 
     
     
       13. The packaged integrated circuit device of  claim 11  wherein the protective film includes plastic. 
     
     
       14. The packaged integrated circuit device of  claim 11  wherein the protective film is substantially co-extensive with the back surface. 
     
     
       15. The packaged integrated circuit device of  claim 11  wherein the electrical contacts include a plurality of contact bumps.

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