Projection exposure system having a reflective reticle

Abstract

A projection exposure system for microlithography includes an illuminating system ( 2 ), a reflective reticle ( 5 ) and reduction objectives ( 71, 72 ). In the reduction objective ( 71, 72 ), a first beam splitter cube ( 3 ) is provided which superposes the illuminating beam path ( 100 ) and the imaging beam path ( 200 ). In order to obtain an almost telecentric entry at the reticle, optical elements ( 71 ) are provided between beam splitter cube ( 3 ) and the reflective reticle ( 5 ). Advantageously, the reduction objective is a catadioptric objective having a beam splitter cube ( 3 ) whose fourth unused side can be used for coupling in light. The illuminating beam path ( 100 ) can also be coupled in with a non-parallel beam splitter plate. The illuminating beam path is refractively corrected in passthrough to compensate for aberrations via the special configuration of the rear side of the beam splitter plate. Advantageously, a beam splitter plate of this kind is used within a reduction objective in lieu of a deflecting mirror and only refractive components are introduced between the beam splitter plate and the reflective reticle.

1. A projection exposure system for microlithography, the projection exposure system comprising:
 a light source;  
 an illuminating system mounted downstream of said light source for transmitting light from said light source as an illuminating beam along an illuminating beam path;  
 a reflective reticle;  
 a reduction objective defining an imaging beam path and being configured for imaging said reticle onto an object;  
 a beam splitter cube mounted in said imaging beam path for mutually superposing said illuminating beam path and said imaging beam path;  
 optical elements mounted on said imaging beam path between said reflective reticle and said beam splitter cube; and,  
 said illuminating light beam having chief rays which impinge on said reflective reticle at an angle of incidence having a value up to |15| mrad.  
 
     
     
       2. The projection exposure system of  claim 1 , wherein said angle of incidence is up to |5| mrad. 
     
     
       3. The projection exposure system of  claim 1 , wherein said angle of incidence is up to |1.0| mrad. 
     
     
       4. The projection exposure system of  claim 1 , wherein said illuminating light beam has centroidal rays which, after being reflected at said reflective reticle, deviate from said chief rays by a maximum of |2.5| mrad. 
     
     
       5. A projection exposure system for microlithography, the projection exposure system comprising:
 a light source;  
 an illuminating system mounted downstream of said light source for transmitting light from said light source as an illuminating beam along an illuminating beam path;  
 a reflective reticle;  
 a reduction objective defining an imaging beam path and being configured for imaging said reticle onto an object;  
 a beam splitter cube mounted in said imaging beam path for mutually superposing said illuminating beam path and said imaging beam path;  
 said beam splitter cube being a polarization beam splitter cube having a beam splitter surface; and,  
 the light of said illuminating light beam, before entering said polarized beam splitter cube, being linearly polarized to more than 95% perpendicular to said beam splitter surface when said illuminating beam is not to be reflected at said beam splitter surface or being linearly polarized to more than 95% parallel to said beam splitter surface when the illuminating beam path is to be reflected at said beam splitter surface.  
 
     
     
       6. The projection exposure system of  claim 5 , wherein said reduction objective is a catadioptric objective. 
     
     
       7. The projection exposure system of  claim 6 , wherein said beam splitter cube is a first beam splitter cube; said reduction objective includes a concave mirror and a second beam splitter cube which separates the beam path to and from said concave mirror. 
     
     
       8. The projection exposure system of  claim 6 , wherein said first beam splitter cube defines a deflecting surface in the beam path of said reduction objective. 
     
     
       9. The projection exposure system of  claim 8 , wherein said reduction objective is configured to be free of an intermediate image. 
     
     
       10. The projection exposure system of  claim 8 , wherein said reduction objective is configured to have an intermediate image. 
     
     
       11. A projection exposure system for microlithography, the projection exposure system comprising:
 a light source;  
 an illuminating system mounted downstream of said light source for transmitting light from said light source as an illuminating beam along an illuminating beam path;  
 a reflective reticle;  
 a reduction objective defining an imaging beam path and being configured for imaging said reticle onto an object;  
 a beam splitter cube mounted in said imaging beam path for mutually superposing said illuminating beam path and said imaging beam path;  
 said reduction objective including a first objective incorporating said beam splitter, an intermediate image; and, 
 a second objective; and,  
 
 said first objective having an imaging scale of −1.0±0.25 and said second objective having an intermediate imaging scale of −0.25±0.15.  
 
     
     
       12. The projection exposure system of  claim 11 , wherein said first objective and said second objective are configured to be purely refractive. 
     
     
       13. The projection exposure system of  claim 11 , wherein said first objective is configured to be purely refractive; and,
 said second objective is configured to be catadioptric.  
 
     
     
       14. A projection exposure system for microlithography, the projection exposure system comprising:
 a light source;  
 an illuminating system mounted downstream of said light source for transmitting light from said light source as an illuminating beam along an illuminating beam path;  
 a reflective reticle;  
 a reduction objective defining an imaging beam path and being configured for imaging said reticle onto an object;  
 a beam splitter plate for mutually superposing said illuminating beam path and said imaging beam path;  
 said beam splitter plate having a first surface on which said imaging beam path is reflected in air and said beam splitter plate having a second surface; and,  
 said first surface being a planar surface and said second surface being a corrective surface deviating from said planar surface.  
 
     
     
       15. The projection exposure system of  claim 14 , wherein said beam splitter plate is wedge shaped. 
     
     
       16. The projection exposure system of  claim 14 , wherein said illuminating beam is refractively corrected in passing through said beam splitter plate. 
     
     
       17. The projection exposure system of  claim 16 , wherein said beam splitter plate defines a deflecting surface in the beam path of said reduction objective. 
     
     
       18. The projection exposure system of  claim 15 , wherein only refractive elements and a λ/4 platelet are provided between said beam splitter plate and said reflective reticle. 
     
     
       19. The projection exposure system of  claim 15 , wherein said beam splitter plate is accommodated in a catadioptric reduction objective. 
     
     
       20. The projection exposure system of  claim 19 , wherein said catadioptric reduction objective is configured to be free of an intermediate image. 
     
     
       21. A method for making a microstructured object with a projection exposure system for microlithography which includes:
 a light source; a reflective reticle defining a reticle plane;  
 an illuminating system mounted downstream of said light source for transmitting light from said light source along an illuminating beam path as an illuminating light beam having chief rays which impinge on said reflective reticle at an angle of incidence having a value up to |15| mrad;  
 a reduction objective defining an imaging beam path and an imaging plane and being configured for imaging said reticle onto the object; and,  
 a beam splitter cube mounted in said imaging beam path for mutually superposing said illuminating beam path and said imaging beam path; and,  
 the method comprising the steps of: 
 placing an object in the form of a substrate having a light-sensitive layer in said imaging plane;  
 inserting a mask containing a pattern thereon into said illuminating beam path at said reticle plane;  
 imaging said pattern onto said lightsensitive  light- sensitive  layer of said substrate utilizing said projection exposure system; and,  
 exposing said light-sensitive layer by passing the light of said light source along said illuminating beam path thereby structuring said substrate.  
 
 
     
     
       22. A method for making a mcirostructured object with a projection exposure system for microlithography which includes:
 a light source;  
 an illuminating system mounted downstream of said light source for transmitting light from said light source as an illuminating beam along an illuminating beam path;  
 a reflective reticle defining a reticle plane;  
 a reduction objective defining an imaging beam path and an imaging plane and being configured for imaging said reticle onto an object;  
 a beam splitter plate for mutually superposing said illuminating beam path and said imaging beam path;  
 said beam splitter plate having a first surface on which said imaging beam path is reflected in air and said beam splitter plate having a second surface; and,  
 said first surface being a planar surface and said second surface being a corrective surface deviating from said planar surface; and,  
 the method comprising the steps of: 
 placing an object in the form of a substrate having a light-sensitive layer in said imaging plane;  
 inserting a mask containing a pattern thereon into said illuminating beam path at said reticle plane;  
 imaging said pattern onto said light-sensitive layer of said substrate utilizing said projection exposure system; and,  
 exposing said light-sensitive layer by passing the light of said light source along said illuminating beam path thereby structuring said substrate.  
 
 
     
     
       23. A projection exposure system for microlithography, the projection exposure system comprising:
 a light source;  
 an illuminating system mounted downstream of said light source for transmitting light from said light source as an illuminating beam along an illuminating beam path;  
 a reflective reticle;  
 a reduction objective defining an imaging beam path and being configured for imaging said reticle onto an object;  
 a beam splitter cube mounted in said imaging beam path for mutually superposing said illuminating beam path and said imaging beam path;  
 said reduction objective being a catadioptric objective;  
 said beam splitter cube being a first beam splitter cube; and,  
 said reduction objective including a concave mirror and a second beam splitter cube which separates the beam path to and from said concave mirror.  
 
     
     
       24. A microlithographic projection exposure system comprising:
   a light source;        an illuminating system;        a reticle; and        a reduction objective being configured for imaging said reticle onto an object, wherein said reduction objective includes:      a first objective;        an intermediate image;        a second objective comprising a concave mirror;        a second intermediate image;        a third objective in sequence; and        a deflecting mirror with two deflecting surfaces.        
     
     
       25. The system of  claim 24 , wherein said first objective has an imaging scale of one of the group consisting of − 1 . 0 ± 0 . 25  and − 0 . 5 ± 0 . 2 .  
     
     
       26. A microlithographic projection exposure system comprising:
   a light source;        an illuminating system;        a reticle; and        a reduction objective being configured for imaging said reticle onto an object, wherein said reduction objective includes:      a first objective;        an intermediate image;        a second objective comprising a concave mirror;        a second intermediate image;        a third objective in sequence; and        a deflecting mirror with two deflecting surfaces; wherein the reduction objective has an image end numerical aperture of a value of more than  0 . 8 .        
     
     
       27. A projection exposure system for microlithography for imaging a reticle to a wafer plane with two intermediate image planes comprising:
   a first intermediate imaging system for imaging of a reticle to a first intermediate image; and        a catadioptric intermediate imaging system having an object field;        wherein the object field of the catadioptric intermediate imaging system is decentered with respect to the optical axis, and having a deflecting mirror with two deflecting surfaces.      
     
     
       28. A system according to  claim 27 , wherein said catadioptric intermediate imaging system is arranged offset to the first intermediate imaging system.  
     
     
       29. A system according to  claim 27 , wherein said first intermediate imaging system has an imaging scale of one of the group consisting of − 1 . 0 ± 0 . 25  and − 0 . 5 ± 0 . 2 .  
     
     
       30. A system according to  claim 27 , wherein said catadioptric intermediate imaging system comprises a concave mirror.  
     
     
       31. A system of  claim 27 , wherein the reduction objective has an image end numerical aperture of a value of more than  0 . 8 .  
     
     
       32. A microlithographic projection exposure system comprising:
   a light source;        an illuminating system;        a reticle; and        a reduction objective being configured for imaging said reticle onto an object;        wherein said reduction objective includes:      a first objective providing an intermediate image;        a catadioptric objective comprising a concave mirror;        a second intermediate image;        a purely refractive objective; and        a wafer plane parallel to said reticle.        
     
     
       33. The system of  claim 32 , wherein said first objective has an imaging scale of one of the group consisting of − 1 . 0 ± 0 . 25  and − 0 . 5 ± 0 . 2 .  
     
     
       34. A system of  claim 32 , wherein the reduction objective has an image end numerical aperture of a value of more than  0 . 8 .  
     
     
       35. A projection exposure system for microlithography for imaging a reticle to a wafer plane with two intermediate image planes comprising:
   a first intermediate imaging system for imaging of the reticle to a first intermediate image;        a catadioptric intermediate imaging system for imaging the first intermediate image to a second intermediate image;        wherein the object field of the catadioptric intermediate imaging system is not centered with respect to the optical axis, said wafer plane being parallel to said reticle.      
     
     
       36. A system according to  claim 35 , wherein said catadioptric intermediate imaging system is arranged offset to the first intermediate imaging system.  
     
     
       37. A system according to  claim 35 , wherein said first intermediate imaging system has an imaging scale of one of the group consisting of − 1 . 0 ± 0 . 25  and − 0 . 5 ± 0 . 2 .  
     
     
       38. A system according to  claim 35 , wherein said catadioptric intermediate imaging system comprises a concave mirror and a deflecting mirror with two deflecting surfaces.  
     
     
       39. A system according to  claim 32 , further comprising a deflecting mirror with two deflecting surfaces.  
     
     
       40. The system of  claim 26 , wherein said first objective has an imaging scale of one of the group consisting of − 1 . 0 ± 0 . 25  and − 0 . 5 ± 0 . 2 .