USRE43380EExpiredUtilityPatentIndex 83

Semiconductor device including semiconductor element surrounded by an insulating member and wiring structures on upper and lower surfaces of the semiconductor element and insulating member, and manufacturing method thereof

Assignee: WAKISAKA SHINJIPriority: Nov 10, 2003Filed: May 6, 2010Granted: May 15, 2012

Est. expiryNov 10, 2023(expired)· nominal 20-yr term from priority

Inventors:WAKISAKA SHINJI JOBETTO HIROYASU WAKABAYASHI TAKESHI MIHARA ICHIRO

H10W 72/5522H10W 74/00H10W 90/722H10W 90/291H10W 90/297H10W 90/20H10W 72/0198H10W 70/099H10W 72/884H10W 72/874H10W 90/754H10W 72/07554H10W 72/547H10W 72/29H10W 72/9413H10W 90/00H10W 70/09H10W 99/00H10W 72/07338H10W 72/07331H10W 72/073H10W 70/093H10W 72/354H10W 90/724H10W 72/01331H10W 70/60H10W 72/241H10W 90/734H10W 90/736H10W 90/732H10W 70/635H10W 70/614H10W 70/40

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Claims

Abstract

A first semiconductor element is mounted on a base plate, and is in a sealed state by the periphery thereof being covered by an insulation member, and the upper surface thereof being covered by an upper insulation film. An upper wiring layer formed on the upper insulation film, and the lower wiring layer formed below the base plate via lower insulation films are connected by conductors. A second semiconductor element is mounted exposed, being connected to the lower wiring layer.

Claims

exact text as granted — not AI-modified

1. A semiconductor device comprising:
a first semiconductor element that includes: a semiconductor substrate, a plurality of connecting pads, a plurality of columnar electrodes for external connection which are connected to the connecting pads, and a sealing film covering the semiconductor substrate between the columnar electrodes such that an upper surface of the sealing film is flush with upper surfaces of the columnar electrodes;
an insulation member provided at a periphery of the first semiconductor element;
an upper wiring structure formed on an upper surface of the first semiconductor element and the insulation member;
a lower wiring structure formed on a lower surface of the first semiconductor element and the insulation member; and
a second semiconductor element that is mounted on at least one of the upper wiring structure and the lower wiring structure;
wherein the first semiconductor element comprises an overcoat covering the semiconductor substrate except for a center of each of the connecting pads and wirings which are formed on the overcoat and which connect the connecting pads to the columnar electrodes, respectively.

2. The semiconductor device according to claim 1 , further comprising a conductor that penetrates the insulation member to electrically connect the upper wiring structure and the lower wiring structure.

3. The semiconductor device according to claim 1 , wherein the second semiconductor element is mounted only on one of the upper wiring structure and the lower wiring structure, and solder balls are mounted on the other of the upper wiring structure and the lower wiring structure.

4. The semiconductor device according to claim 1 , wherein the upper wiring structure comprises upper insulation films having a multiple-layer structure, and upper wiring layers having a multiple-layer structure.

5. The semiconductor device according to claim 4 , wherein a top layer of the upper wiring layers includes at least one connecting pad, and the upper layer wiring structure includes a top insulation film that covers the top layer of the upper wiring layers except for the connecting pad.

6. The semiconductor device according to claim 5 , further comprising at least one solder ball provided on the at least one connecting pad of the top layer of the upper wiring layers.

7. The semiconductor device according to claim 5 , further comprising surface layers provided on the top layer of the upper wiring layers.

8. The semiconductor device according to claim 7 , wherein the second semiconductor element is mounted on the top insulation film.

9. The semiconductor device according to claim 7 , wherein the second semiconductor element comprises bonding wires connected to the surface layers.

10. The semiconductor device according to claim 1 , wherein the lower wiring structure comprises a base plate, a lower insulation film, and a lower wiring layer.

11. The semiconductor device according to claim 10 , wherein the base plate comprises at least one of an upper layer wiring provided on an upper surface of the base plate and a lower layer wiring provided on a lower surface of the base plate.

12. The semiconductor device according to claim 11 , wherein at least one of the upper layer wiring and the lower layer wiring is a ground wiring.

13. The semiconductor device according to claim 10 , wherein the base plate is made of thermosetting resin including a reinforcer.

14. The semiconductor device according to claim 1 , wherein the lower wiring structure includes lower insulation films having a multiple-layer structure, and lower wiring layers having a multiple-layer structure.

15. The semiconductor device according to claim 14 , wherein a bottom layer of the lower wiring layers includes at least one connecting pad, and the lower wiring structure includes a bottom insulation film that covers the bottom layer of the lower wiring layers except for the at least one connecting pad.

16. The semiconductor device according to claim 15 , further comprising a solder ball intervened between the second semiconductor element and the bottom layer of the lower wiring layers.

17. The semiconductor device according to claim 15 , further comprising surface layers provided on the bottom layer of the lower wiring layers.

18. The semiconductor device according to claim 17 , wherein the second semiconductor element is mounted on the bottom insulation film.

19. The semiconductor device according to claim 18 , wherein the second semiconductor element comprises bonding wires that are connected to the surface layers.

20. The semiconductor device according to claim 1 , wherein each of the columnar electrodes has a height of at least 60 μm.

21. A semiconductor device comprising:
a first semiconductor element that includes: a semiconductor substrate, a plurality of connecting pads, a plurality of columnar electrodes for external connection which are connected to the connecting pads, and a sealing film covering the semiconductor substrate between the columnar electrodes such that an upper surface of the sealing film is substantially flush with upper surfaces of the columnar electrodes; an insulation member provided at a periphery of the first semiconductor element such that an upper surface of the insulation member is substantially flush with an upper surface of the first semiconductor element; an upper wiring structure formed on the upper surface of the first semiconductor element and the insulation member; a lower wiring structure formed on a lower surface of the first semiconductor element and the insulation member; and a second semiconductor element that is mounted on at least one of the upper wiring structure and the lower wiring structure; wherein the first semiconductor element comprises an overcoat covering the semiconductor substrate except for a center of each of the connecting pads and wirings which are formed on the overcoat and which connect the connecting pads to the columnar electrodes, respectively.

22. The semiconductor device according to claim 21, further comprising a conductor that penetrates the insulation member to electrically connect the upper wiring structure and the lower wiring structure.

23. The semiconductor device according to claim 21, wherein the second semiconductor element is mounted only on one of the upper wiring structure and the lower wiring structure, and solder balls are mounted on the other of the upper wiring structure and the lower wiring structure.

24. The semiconductor device according to claim 21, wherein the upper wiring structure comprises upper insulation films having a multiple-layer structure, and upper wiring layers having a multiple-layer structure.

25. The semiconductor device according to claim 24, wherein a top layer of the upper wiring layers includes at least one connecting pad, and the upper layer wiring structure includes a top insulation film that covers the top layer of the upper wiring layers except for the connecting pad.

26. The semiconductor device according to claim 21, wherein the lower wiring structure comprises a base plate, a lower insulation film, and a lower wiring layer.

27. The semiconductor device according to claim 21, wherein the lower wiring structure includes lower insulation films having a multiple-layer structure, and lower wiring layers having a multiple-layer structure.

28. A semiconductor device comprising:
a first semiconductor element that includes: a semiconductor substrate, a plurality of connecting pads, a plurality of columnar electrodes for external connection which are connected to the connecting pads, and a sealing film covering the semiconductor substrate between the columnar electrodes such that an upper surface of the sealing film is substantially flush with upper surfaces of the columnar electrodes; an insulation member provided at a periphery of the first semiconductor element; an upper wiring structure formed on an upper surface of the first semiconductor element and the insulation member; a lower wiring structure formed on a lower surface of the first semiconductor element and the insulation member; and a second semiconductor element that is mounted on at least one of the upper wiring structure and the lower wiring structure; wherein the first semiconductor element comprises an overcoat covering the semiconductor substrate except for a center of each of the connecting pads and wirings which are formed on the overcoat and which connect the connecting pads to the columnar electrodes, respectively.

29. The semiconductor device according to claim 28, further comprising a conductor that penetrates the insulation member to electrically connect the upper wiring structure and the lower wiring structure.

30. The semiconductor device according to claim 28, wherein the second semiconductor element is mounted only on one of the upper wiring structure and the lower wiring structure, and solder balls are mounted on the other of the upper wiring structure and the lower wiring structure.

31. The semiconductor device according to claim 28, wherein the upper wiring structure comprises upper insulation films having a multiple-layer structure, and upper wiring layers having a multiple-layer structure.

32. The semiconductor device according to claim 31, wherein a top layer of the upper wiring layers includes at least one connecting pad, and the upper layer wiring structure includes a top insulation film that covers the top layer of the upper wiring layers except for the connecting pad.

33. The semiconductor device according to claim 32, further comprising at least one solder ball provided on the at least one connecting pad of the top layer of the upper wiring layers.

34. The semiconductor device according to claim 32, further comprising surface layers provided on the top layer of the upper wiring layers.

35. The semiconductor device according to claim 34, wherein the second semiconductor element is mounted on the top insulation film.

36. The semiconductor device according to claim 34, wherein the second semiconductor element comprises bonding wires connected to the surface layers.

37. The semiconductor device according to claim 28, wherein the lower wiring structure comprises a base plate, a lower insulation film, and a lower wiring layer.

38. The semiconductor device according to claim 37, wherein the base plate comprises at least one of an upper layer wiring provided on an upper surface of the base plate and a lower layer wiring provided on a lower surface of the base plate.

39. The semiconductor device according to claim 38, wherein at least one of the upper layer wiring and the lower layer wiring is a ground wiring.

40. The semiconductor device according to claim 37, wherein the base plate is made of thermosetting resin including a reinforcer.

41. The semiconductor device according to claim 28, wherein the lower wiring structure includes lower insulation films having a multiple-layer structure, and lower wiring layers having a multiple-layer structure.

42. The semiconductor device according to claim 41, wherein a bottom layer of the lower wiring layers includes at least one connecting pad, and the lower wiring structure includes a bottom insulation film that covers the bottom layer of the lower wiring layers except for the connecting pad.

43. The semiconductor device according to claim 42, further comprising a solder ball intervened between the second semiconductor element and the bottom layer of the lower wiring layers.

44. The semiconductor device according to claim 42, further comprising surface layers provided on the bottom layer of the lower wiring layers.

45. The semiconductor device according to claim 44, wherein the second semiconductor element is mounted on the bottom insulation film.

46. The semiconductor device according to claim 45, wherein the second semiconductor element comprises bonding wires that are connected to the surface layers.

47. The semiconductor device according to claim 28, wherein each of the columnar electrodes has a height of at least 60 μm.

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