Inventor · disambiguated record
Fredrick B. Jenne
Also filed as: JENNE FREDRICK · JENNE FREDRICK B · JENNE FREDRICK BENJAMIN
62 granted patents·8 pending applications·844 citations·filing 1975–2023
99Inventor score
Files withCYPRESS SEMICONDUCTOR CORP27Longitude Flash Memory Solutions Ltd18RAMKUMAR KRISHNASWAMY6JENNE FREDRICK5LEVY SAGY5
Top patents by PatentIndex Score
70 records- 0198US8222688B1SONOS stack with split nitride memory layerJENNE FREDRICK·Filed 2010·Granted Jul 17, 2012·58 cites·24 claims
- 0297US9449831B2Oxide-nitride-oxide stack having multiple oxynitride layersLEVY SAGY·Filed 2012·Granted Sep 20, 2016·22 cites·5 claims
- 0397US9355849B1Oxide-nitride-oxide stack having multiple oxynitride layersCYPRESS SEMICONDUCTOR CORP·Filed 2013·Granted May 31, 2016·19 cites·17 claims
- 0497US8071453B1Method of ONO integration into MOS flowRAMKUMAR KRISHNASWAMY·Filed 2009·Granted Dec 6, 2011·74 cites·24 claims
- 0596US8710578B2SONOS stack with split nitride memory layerJENNE FREDRICK·Filed 2012·Granted Apr 29, 2014·30 cites·20 claims
- 0696US8679927B2Integration of non-volatile charge trap memory devices and logic CMOS devicesRAMKUMAR KRISHNASWAMY·Filed 2008·Granted Mar 25, 2014·31 cites·16 claims
- 0796US8643124B2Oxide-nitride-oxide stack having multiple oxynitride layersLEVY SAGY·Filed 2011·Granted Feb 4, 2014·27 cites·18 claims
- 0895US8093128B2Integration of non-volatile charge trap memory devices and logic CMOS devicesKOUTNY JR WILLIAM W C·Filed 2008·Granted Jan 10, 2012·89 cites·14 claims
- 0994US11257912B2Sonos stack with split nitride memory layerLongitude Flash Memory Solutions Ltd·Filed 2020·Granted Feb 22, 2022·2 cites·13 claims
- 1094US10199229B2SONOS stack with split nitride memory layerCYPRESS SEMICONDUCTOR CORP·Filed 2017·Granted Feb 5, 2019·5 cites·19 claims
- 1193US9793125B2SONOS stack with split nitride memory layerCYPRESS SEMICONDUCTOR CORP·Filed 2015·Granted Oct 17, 2017·5 cites·5 claims
- 1293US8614124B2SONOS ONO stack scalingJENNE FREDRICK B·Filed 2007·Granted Dec 24, 2013·22 cites·13 claims
- 1393US7969804B1Memory architecture having a reference current generator that provides two reference currentsCYPRESS SEMICONDUCTOR CORP·Filed 2008·Granted Jun 28, 2011·25 cites·18 claims
- 1492US10700083B1Method of ONO integration into logic CMOS flowLongitude Flash Memory Solutions Ltd·Filed 2015·Granted Jun 30, 2020·6 cites·11 claims
- 1591US8871595B2Integration of non-volatile charge trap memory devices and logic CMOS devicesRAMKUMAR KRISHNASWAMY·Filed 2012·Granted Oct 28, 2014·13 cites·20 claims
- 1691US4003036ASingle IGFET memory cell with buried storage elementAMERICAN MICRO SYST·Filed 1975·Granted Jan 11, 1977·59 cites·17 claims
- 1790US9299568B2SONOS ONO stack scalingJENNE FREDRICK·Filed 2012·Granted Mar 29, 2016·7 cites·14 claims
- 1890US9105512B2SONOS stack with split nitride memory layerCYPRESS SEMICONDUCTOR CORP·Filed 2014·Granted Aug 11, 2015·5 cites·17 claims
- 1989US8710579B1SONOS stack with split nitride memory layerJENNE FREDRICK·Filed 2012·Granted Apr 29, 2014·5 cites·11 claims
- 2089US5914895ANon-volatile random access memory and methods for making and configuring sameCYPRESS SEMICONDUCTOR CORP·Filed 1997·Granted Jun 22, 1999·62 cites·20 claims
- 2188US10790364B2SONOS stack with split nitride memory layerLongitude Flash Memory Solutions Ltd·Filed 2019·Granted Sep 29, 2020·2 cites·9 claims
- 2288US10374067B2Oxide-nitride-oxide stack having multiple oxynitride layersLongitude Flash Memory Solutions Ltd·Filed 2016·Granted Aug 6, 2019·3 cites·19 claims
- 2388US8542541B2Memory architecture having two independently controlled voltage pumpsHIROSE RYAN T·Filed 2012·Granted Sep 24, 2013·9 cites·17 claims
- 2487US8125835B2Memory architecture having two independently controlled voltage pumpsHIROSE RYAN T·Filed 2008·Granted Feb 28, 2012·13 cites·15 claims
- 2586US8513753B1Photodiode having a buried well regionJENNE FREDRICK B·Filed 2005·Granted Aug 20, 2013·10 cites·22 claims
- 2685US2024234550A1Oxide-Nitride-Oxide Stack Having Multiple Oxynitride LayersLongitude Flash Memory Solutions Ltd·Filed 2023·Application pending·0 cites
- 2784US9018693B2Deuterated film encapsulation of nonvolatile charge trap memory deviceCYPRESS SEMICONDUCTOR CORP·Filed 2014·Granted Apr 28, 2015·6 cites·13 claims
- 2884US7859904B1Three cycle memory programmingCYPRESS SEMICONDUCTOR CORP·Filed 2008·Granted Dec 28, 2010·18 cites·18 claims
- 2982US12266521B2Oxide-nitride-oxide stack having multiple oxynitride layersLongitude Flash Memory Solutions Ltd·Filed 2022·Granted Apr 1, 2025·0 cites·16 claims
- 3082US12048162B2Method of ono integration into logic CMOS flowLongitude Flash Memory Solutions Ltd·Filed 2023·Granted Jul 23, 2024·0 cites·6 claims
- 3182US9716153B2Nonvolatile charge trap memory device having a deuterated layer in a multi-layer charge-trapping regionLEVY SAGY·Filed 2012·Granted Jul 25, 2017·3 cites·17 claims
- 3282US7277347B2Antifuse capacitor for configuring integrated circuitsCYPRESS SEMICONDUCTOR CORP·Filed 2005·Granted Oct 2, 2007·13 cites·15 claims
- 3382US4105475AEpitaxial method of fabricating single igfet memory cell with buried storage elementAMERICAN MICRO SYST·Filed 1976·Granted Aug 8, 1978·38 cites·5 claims
- 3481US9023707B1Simultaneously forming a dielectric layer in MOS and ONO device regionsRAMKUMAR KRISHNASWAMY·Filed 2011·Granted May 5, 2015·5 cites·10 claims
- 3581US7706180B2Method and apparatus for reduction of bit-line disturb and soft-erase in a trapped-charge memoryCYPRESS SEMICONDUCTOR CORP·Filed 2007·Granted Apr 27, 2010·10 cites·21 claims
- 3681US2023074163A1Sonos ono stack scalingLongitude Flash Memory Solutions Ltd·Filed 2022·Application pending·0 cites
- 3780US7253496B2Antifuse circuit with current regulator for controlling programming currentCYPRESS SEMICONDUCTOR CORP·Filed 2005·Granted Aug 7, 2007·13 cites·19 claims
- 3880US2022173216A1Sonos stack with split nitride memory layerLongitude Flash Memory Solutions Ltd·Filed 2022·Application pending·0 cites
- 3979US7206247B2Antifuse circuit with dynamic current limiterCYPRESS SEMICONDUCTOR CORP·Filed 2005·Granted Apr 17, 2007·11 cites·20 claims
- 4078US11784243B2Oxide-nitride-oxide stack having multiple oxynitride layersLongitude Flash Memory Solutions Ltd·Filed 2021·Granted Oct 10, 2023·0 cites·20 claims
- 4175US7787303B2Programmable CSONOS logic elementCYPRESS SEMICONDUCTOR CORP·Filed 2008·Granted Aug 31, 2010·9 cites·14 claims
- 4274US10903068B2Oxide-nitride-oxide stack having multiple oxynitride layersLongitude Flash Memory Solutions Ltd·Filed 2016·Granted Jan 26, 2021·1 cites·18 claims
- 4374US8637921B2Nitridation oxidation of tunneling layer for improved SONOS speed and retentionLEVY SAGY·Filed 2007·Granted Jan 28, 2014·3 cites·10 claims
- 4473US11222965B2Oxide-nitride-oxide stack having multiple oxynitride layersLongitude Flash Memory Solutions Ltd·Filed 2019·Granted Jan 11, 2022·1 cites·14 claims
- 4573US2021249254A1Oxide-nitride-oxide stack having multiple oxynitride layersLongitude Flash Memory Solutions Ltd·Filed 2021·Application pending·0 cites
- 4672US11569254B2Method of ono integration into logic CMOS flowLongitude Flash Memory Solutions Ltd·Filed 2020·Granted Jan 31, 2023·0 cites·18 claims
- 4772US10032517B2Memory architecture having two independently controlled voltage pumpsCYPRESS SEMICONDUCTOR CORP·Filed 2015·Granted Jul 24, 2018·2 cites·14 claims
- 4872US7149114B2Latch circuit and method for writing and reading volatile and non-volatile data to and from the latchCYPRESS SEMICONDUCTOR CORP·Filed 2004·Granted Dec 12, 2006·18 cites·16 claims
- 4972US2021104402A1Sonos ono stack scalingLongitude Flash Memory Solutions Ltd·Filed 2020·Application pending·0 cites
- 5071US10903342B2Oxide-nitride-oxide stack having multiple oxynitride layersLongitude Flash Memory Solutions Ltd·Filed 2018·Granted Jan 26, 2021·1 cites·20 claims
Showing the top 50 of 70 patent records by PatentIndex Score.
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