Inventor · disambiguated record
Thomas R. Prunty
Also filed as: PRUNTY THOMAS · PRUNTY THOMAS R
40 granted patents·14 pending applications·106 citations·filing 2011–2020
97Inventor score
Top patents by PatentIndex Score
54 records- 0196US9368582B2High power gallium nitride electronics using miscut substratesAVOGY INC·Filed 2013·Granted Jun 14, 2016·22 cites·10 claims
- 0296US8502234B2Monolithically integrated vertical JFET and Schottky diodeKIZILYALLI ISIK C·Filed 2011·Granted Aug 6, 2013·19 cites·6 claims
- 0388US8569153B2Method and system for carbon doping control in gallium nitride based devicesBOUR DAVID P·Filed 2011·Granted Oct 29, 2013·7 cites·21 claims
- 0486US8749015B2Method and system for fabricating floating guard rings in GaN materialsDISNEY DONALD R·Filed 2011·Granted Jun 10, 2014·6 cites·11 claims
- 0583US10347736B2High power gallium nitride electronics using miscut substratesNEXGEN POWER SYSTEMS INC·Filed 2017·Granted Jul 9, 2019·2 cites·19 claims
- 0682US10854727B2High power gallium nitride electronics using miscut substratesNEXGEN POWER SYSTEMS INC·Filed 2020·Granted Dec 1, 2020·1 cites·18 claims
- 0781US9159784B2Aluminum gallium nitride etch stop layer for gallium nitride based devicesROMANO LINDA·Filed 2011·Granted Oct 13, 2015·4 cites·11 claims
- 0879US9224828B2Method and system for floating guard rings in gallium nitride materialsEDWARDS ANDREW·Filed 2011·Granted Dec 29, 2015·3 cites·16 claims
- 0979US8927999B2Edge termination by ion implantation in GaNKIZILYALLI ISIK C·Filed 2011·Granted Jan 6, 2015·3 cites·18 claims
- 1078US9184305B2Method and system for a GAN vertical JFET utilizing a regrown gateKIZILYALLI ISIK C·Filed 2011·Granted Nov 10, 2015·4 cites·7 claims
- 1178US9059199B2Method and system for a gallium nitride vertical transistorAVOGY INC·Filed 2013·Granted Jun 16, 2015·3 cites·7 claims
- 1278US8969912B2Method and system for a GaN vertical JFET utilizing a regrown channelKIZILYALLI ISIK C·Filed 2011·Granted Mar 3, 2015·4 cites·6 claims
- 1378US8592298B2Fabrication of floating guard rings using selective regrowthROMANO LINDA·Filed 2011·Granted Nov 26, 2013·5 cites·19 claims
- 1477US8946788B2Method and system for doping control in gallium nitride based devicesKIZILYALLI ISIK C·Filed 2011·Granted Feb 3, 2015·3 cites·6 claims
- 1577US8941117B2Monolithically integrated vertical JFET and Schottky diodeAVOGY INC·Filed 2013·Granted Jan 27, 2015·3 cites·6 claims
- 1676US9136116B2Method and system for formation of P-N junctions in gallium nitride based electronicsBOUR DAVID P·Filed 2011·Granted Sep 15, 2015·3 cites·15 claims
- 1775US10319829B2Method and system for in-situ etch and regrowth in gallium nitride based devicesNEXGEN POWER SYSTEMS INC·Filed 2017·Granted Jun 11, 2019·1 cites·17 claims
- 1872US9093395B2Method and system for local control of defect density in gallium nitride based electronicsBOUR DAVID P·Filed 2011·Granted Jul 28, 2015·2 cites·23 claims
- 1971US9196679B2Schottky diode with buried layer in GaN materialsAVOGY INC·Filed 2015·Granted Nov 24, 2015·1 cites·22 claims
- 2070US8643134B2GaN-based Schottky barrier diode with field plateRAJ MADHAN·Filed 2011·Granted Feb 4, 2014·3 cites·7 claims
- 2167US9318331B2Method and system for diffusion and implantation in gallium nitride based devicesAVOGY INC·Filed 2014·Granted Apr 19, 2016·1 cites·20 claims
- 2267US9171751B2Method and system for fabricating floating guard rings in GaN materialsAVOGY INC·Filed 2014·Granted Oct 27, 2015·1 cites·17 claims
- 2367US8853063B2Method and system for carbon doping control in gallium nitride based devicesAVOGY INC·Filed 2013·Granted Oct 7, 2014·1 cites·15 claims
- 2466US9123533B2Method and system for in-situ etch and regrowth in gallium nitride based devicesBOUR DAVID P·Filed 2012·Granted Sep 1, 2015·1 cites·13 claims
- 2565US10566439B2High power gallium nitride electronics using miscut substratesNEXGEN POWER SYSTEMS INC·Filed 2019·Granted Feb 18, 2020·0 cites·15 claims
- 2665US9171937B2Monolithically integrated vertical JFET and Schottky diodeAVOGY INC·Filed 2014·Granted Oct 27, 2015·1 cites·14 claims
- 2762US9159799B2Method of fabricating a merged P-N junction and schottky diode with regrown gallium nitride layerAVOGY INC·Filed 2013·Granted Oct 13, 2015·1 cites·12 claims
- 2859US9330918B2Edge termination by ion implantation in gallium nitrideAVOGY INC·Filed 2014·Granted May 3, 2016·0 cites·12 claims
- 2959US8778788B2Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diodeEDWARDS ANDREW P·Filed 2011·Granted Jul 15, 2014·1 cites·15 claims
- 3057US9450112B2GaN-based Schottky barrier diode with algan surface layerAVOGY INC·Filed 2014·Granted Sep 20, 2016·0 cites·12 claims
- 3156US9171923B2Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diodeAVOGY INC·Filed 2014·Granted Oct 27, 2015·0 cites·18 claims
- 3256US2017133481A1High power gallium nitride electronics using miscut substratesAVOGY INC·Filed 2016·Application pending·0 cites
- 3354US2016043198A1Schottky diode with buried layer in gan materialsAVOGY INC·Filed 2015·Application pending·0 cites
- 3453US8933532B2Schottky diode with buried layer in GaN materialsEDWARDS ANDREW·Filed 2011·Granted Jan 13, 2015·0 cites·22 claims
- 3552US9525039B2Method of fabricating a merged P-N junction and schottky diode with regrown gallium nitride layerAVOGY INC·Filed 2015·Granted Dec 20, 2016·0 cites·7 claims
- 3650US9324844B2Method and system for a GaN vertical JFET utilizing a regrown channelAVOGY INC·Filed 2015·Granted Apr 26, 2016·0 cites·13 claims
- 3750US9287389B2Method and system for doping control in gallium nitride based devicesAVOGY INC·Filed 2015·Granted Mar 15, 2016·0 cites·20 claims
- 3850US9093284B2Aluminum gallium nitride etch stop layer for gallium nitride based devicesEPOWERSOFT INC·Filed 2013·Granted Jul 28, 2015·0 cites·25 claims
- 3950US2016190296A1Gallium nitride based high electron mobility transistor including an aluminum gallium nitride barrier layerAVOGY INC·Filed 2015·Application pending·0 cites
- 4050US2016190276A1Method and system for in-situ etch and regrowth in gallium nitride based devicesAVOGY INC·Filed 2015·Application pending·0 cites
- 4149US2014051236A1Gan-based schottky barrier diode with field plateAVOGY INC·Filed 2013·Application pending·0 cites
- 4248US8846482B2Method and system for diffusion and implantation in gallium nitride based devicesBOUR DAVID P·Filed 2011·Granted Sep 30, 2014·0 cites·18 claims
- 4348US8836071B2Gallium nitride-based schottky barrier diode with aluminum gallium nitride surface layerBROWN RICHARD J·Filed 2011·Granted Sep 16, 2014·0 cites·28 claims
- 4448US2016190351A1Method and system for gan vertical jfet utilizing a regrown gateAVOGY INC·Filed 2015·Application pending·0 cites
- 4547US2015325677A1Method and system for local control of defect density in gallium nitride based electronicsAVOGY INC·Filed 2015·Application pending·0 cites
- 4646US2015243758A1Method and system for a gallium nitride vertical transistorAVOGY INC·Filed 2015·Application pending·0 cites
- 4746US2016043182A1Method and system for formation of p-n junctions in gallium nitride based electronicsAVOGY INC·Filed 2015·Application pending·0 cites
- 4841US9472684B2Lateral GaN JFET with vertical drift regionAVOGY INC·Filed 2012·Granted Oct 18, 2016·0 cites·9 claims
- 4940US2014145201A1Method and system for gallium nitride vertical jfet with separated gate and sourceAVOGY INC·Filed 2012·Application pending·0 cites
- 5039US8558242B2Vertical GaN-based metal insulator semiconductor FETBROWN RICHARD J·Filed 2011·Granted Oct 15, 2013·0 cites·20 claims
Showing the top 50 of 54 patent records by PatentIndex Score.
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