Inventor · disambiguated record
Theodorus E. Standaert
Also filed as: STANDAERT THEODORUS · STANDAERT THEODORUS E · STANDAERT THEODORUS EDUARDUS · STANDAERT THEODORUS EDUARDUS F
312 granted patents·31 pending applications·2,256 citations·filing 2001–2024
99Inventor score
Top patents by PatentIndex Score
343 records- 0199US9666533B1Airgap formation between source/drain contacts and gatesIBM·Filed 2016·Granted May 30, 2017·54 cites·20 claims
- 0299US8637384B2FinFET parasitic capacitance reduction using air gapANDO TAKASHI·Filed 2012·Granted Jan 28, 2014·374 cites·13 claims
- 0399US8637930B2FinFET parasitic capacitance reduction using air gapANDO TAKASHI·Filed 2011·Granted Jan 28, 2014·99 cites·14 claims
- 0498US10243020B1Structures and methods for embedded magnetic random access memory (MRAM) fabricationIBM·Filed 2017·Granted Mar 26, 2019·18 cites·13 claims
- 0598US10020223B1Reduced tip-to-tip and via pitch at line endIBM·Filed 2017·Granted Jul 10, 2018·30 cites·4 claims
- 0698US9953865B1Structure and method to improve FAV RIE process margin and electromigrationIBM·Filed 2016·Granted Apr 24, 2018·23 cites·20 claims
- 0798US9871116B2Replacement metal gate structuresIBM·Filed 2017·Granted Jan 16, 2018·18 cites·19 claims
- 0898US9735246B1Air-gap top spacer and self-aligned metal gate for vertical fetsIBM·Filed 2016·Granted Aug 15, 2017·39 cites·12 claims
- 0998US9691877B2Replacement metal gate structuresIBM·Filed 2016·Granted Jun 27, 2017·17 cites·12 claims
- 1098US9685532B2Replacement metal gate structuresIBM·Filed 2015·Granted Jun 20, 2017·19 cites·17 claims
- 1198US9653575B1Vertical transistor with a body contact for back-biasingIBM·Filed 2016·Granted May 16, 2017·32 cites·19 claims
- 1298US9576980B1FinFET devices having gate dielectric structures with different thicknesses on same semiconductor structureIBM·Filed 2015·Granted Feb 21, 2017·27 cites·20 claims
- 1398US9559014B1Self-aligned punch through stopper liner for bulk FinFETIBM·Filed 2015·Granted Jan 31, 2017·20 cites·6 claims
- 1498US9508825B1Method and structure for forming gate contact above active area with trench silicideIBM·Filed 2015·Granted Nov 29, 2016·53 cites·14 claims
- 1598US8569152B1Cut-very-last dual-epi flowBASKER VEERARAGHAVAN S·Filed 2012·Granted Oct 29, 2013·65 cites·20 claims
- 1698US8445334B1SOI FinFET with recessed merged Fins and liner for enhanced stress couplingBASKER VEERARAGHAVAN S·Filed 2011·Granted May 21, 2013·41 cites·6 claims
- 1798US8420459B1Bulk fin-field effect transistors with well defined isolationCHENG KANGGUO·Filed 2011·Granted Apr 16, 2013·67 cites·20 claims
- 1898US8084311B1Method of forming replacement metal gate with borderless contact and structure thereofHORAK DAVID V·Filed 2010·Granted Dec 27, 2011·57 cites·20 claims
- 1997US11615988B2FinFET devicesTESSERA LLC·Filed 2021·Granted Mar 28, 2023·2 cites·20 claims
- 2097US10283406B2Fabrication of self-aligned gate contacts and source/drain contacts directly above gate electrodes and source/drainsIBM·Filed 2017·Granted May 7, 2019·12 cites·13 claims
- 2197US10236359B2Replacement metal gate structuresIBM·Filed 2018·Granted Mar 19, 2019·8 cites·12 claims
- 2297US10177256B2Replacement metal gate structuresIBM·Filed 2017·Granted Jan 8, 2019·9 cites·9 claims
- 2397US10056489B2Replacement metal gate structuresIBM·Filed 2017·Granted Aug 21, 2018·8 cites·10 claims
- 2497US9917137B1Integrated magnetic tunnel junction (MTJ) in back end of line (BEOL) interconnectsIBM·Filed 2017·Granted Mar 13, 2018·14 cites·20 claims
- 2597US9865739B2Replacement metal gate structuresIBM·Filed 2017·Granted Jan 9, 2018·12 cites·13 claims
- 2697US9812567B1Precise control of vertical transistor gate lengthIBM·Filed 2016·Granted Nov 7, 2017·15 cites·14 claims
- 2797US9685507B2FinFET devicesIBM·Filed 2015·Granted Jun 20, 2017·15 cites·6 claims
- 2897US9613869B2FinFET devicesIBM·Filed 2016·Granted Apr 4, 2017·13 cites·15 claims
- 2997US9570571B1Gate stack integrated metal resistorsIBM·Filed 2015·Granted Feb 14, 2017·16 cites·18 claims
- 3097US8999774B2Bulk fin-field effect transistors with well defined isolationIBM·Filed 2013·Granted Apr 7, 2015·18 cites·15 claims
- 3197US8604539B2Bulk fin-field effect transistors with well defined isolationCHENG KANGGUO·Filed 2012·Granted Dec 10, 2013·18 cites·20 claims
- 3297US8581320B1MOS capacitors with a finfet processCHENG KANGGUO·Filed 2012·Granted Nov 12, 2013·28 cites·20 claims
- 3396US9947663B2FinFET CMOS with silicon fin N-channel FET and silicon germanium fin P-channel FETIBM·Filed 2016·Granted Apr 17, 2018·13 cites·16 claims
- 3496US9881926B1Static random access memory (SRAM) density scaling by using middle of line (MOL) flowIBM·Filed 2016·Granted Jan 30, 2018·11 cites·12 claims
- 3596US9691659B1Via and chamfer control for advanced interconnectsIBM·Filed 2016·Granted Jun 27, 2017·14 cites·20 claims
- 3696US9553088B1Forming semiconductor device with close ground rulesIBM·Filed 2015·Granted Jan 24, 2017·14 cites·1 claims
- 3796US9530698B1Method and structure for forming FinFET CMOS with dual doped STI regionsIBM·Filed 2015·Granted Dec 27, 2016·11 cites·15 claims
- 3896US9508818B1Method and structure for forming gate contact above active area with trench silicideIBM·Filed 2015·Granted Nov 29, 2016·16 cites·6 claims
- 3996US9209178B2finFET isolation by selective cyclic etchIBM·Filed 2013·Granted Dec 8, 2015·26 cites·11 claims
- 4096US8987790B2Fin isolation in multi-gate field effect transistorsIBM·Filed 2012·Granted Mar 24, 2015·22 cites·15 claims
- 4196US8623712B2Bulk fin-field effect transistors with well defined isolationIBM·Filed 2013·Granted Jan 7, 2014·15 cites·20 claims
- 4296US8455313B1Method for fabricating finFET with merged fins and vertical silicideBASKER VEERARAGHAVAN S·Filed 2012·Granted Jun 4, 2013·28 cites·7 claims
- 4395US11223008B2Pillar-based memory hardmask smoothing and stress reductionIBM·Filed 2019·Granted Jan 11, 2022·6 cites·6 claims
- 4495US10453934B1Vertical transport FET devices having air gap top spacerIBM·Filed 2018·Granted Oct 22, 2019·10 cites·20 claims
- 4595US10050121B2Replacement metal gate structuresIBM·Filed 2017·Granted Aug 14, 2018·6 cites·14 claims
- 4695US9954107B2Strained FinFET source drain isolationIBM·Filed 2015·Granted Apr 24, 2018·12 cites·6 claims
- 4795US9941378B2Air-gap top spacer and self-aligned metal gate for vertical FETsIBM·Filed 2017·Granted Apr 10, 2018·8 cites·9 claims
- 4895US9917082B1Approach to fabrication of an on-chip resistor with a field effect transistorIBM·Filed 2017·Granted Mar 13, 2018·9 cites·14 claims
- 4995US9786563B2Fin pitch scaling for high voltage devices and low voltage devices on the same waferIBM·Filed 2015·Granted Oct 10, 2017·9 cites·8 claims
- 5095US9780035B1Structure and method for improved stabilization of cobalt cap and/or cobalt liner in interconnectsIBM·Filed 2016·Granted Oct 3, 2017·10 cites·25 claims
Showing the top 50 of 343 patent records by PatentIndex Score.
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