Inventor · disambiguated record
Andrew M. Greene
Also filed as: GREENE ANDREW · GREENE ANDREW M · Greene Andrew Mark
130 granted patents·24 pending applications·300 citations·filing 2015–2024
99Inventor score
Top patents by PatentIndex Score
154 records- 0198US9721848B1Cutting fins and gates in CMOS devicesIBM·Filed 2016·Granted Aug 1, 2017·32 cites·20 claims
- 0297US10083961B2Gate cut with integrated etch stop layerIBM·Filed 2016·Granted Sep 25, 2018·14 cites·17 claims
- 0397US9741823B1Fin cut during replacement gate formationIBM·Filed 2016·Granted Aug 22, 2017·22 cites·10 claims
- 0497US9659786B2Gate cut with high selectivity to preserve interlevel dielectric layerIBM·Filed 2015·Granted May 23, 2017·18 cites·20 claims
- 0596US11894436B2Gate-all-around monolithic stacked field effect transistors having multiple threshold voltagesIBM·Filed 2021·Granted Feb 6, 2024·3 cites·14 claims
- 0696US11776957B2Gate cut with integrated etch stop layerTESSERA LLC·Filed 2022·Granted Oct 3, 2023·1 cites·22 claims
- 0796US11552077B2Gate cut with integrated etch stop layerTESSERA LLC·Filed 2021·Granted Jan 10, 2023·2 cites·25 claims
- 0896US10177240B2FinFET device formed by a replacement metal-gate method including a gate cut-last stepIBM·Filed 2015·Granted Jan 8, 2019·15 cites·3 claims
- 0996US9923078B2Trench silicide contacts with high selectivity processIBM·Filed 2015·Granted Mar 20, 2018·14 cites·8 claims
- 1095US10229854B1FinFET gate cut after dummy gate removalIBM·Filed 2017·Granted Mar 12, 2019·11 cites·11 claims
- 1194US10249730B1Controlling gate profile by inter-layer dielectric (ILD) nanolaminatesIBM·Filed 2017·Granted Apr 2, 2019·11 cites·15 claims
- 1294US9923080B1Gate height control and ILD protectionIBM·Filed 2017·Granted Mar 20, 2018·8 cites·20 claims
- 1394US9640633B1Self aligned gate shape preventing void formationIBM·Filed 2015·Granted May 2, 2017·9 cites·17 claims
- 1494US9576954B1POC process flow for conformal recess fillIBM·Filed 2015·Granted Feb 21, 2017·8 cites·10 claims
- 1593US12255204B2Vertical FET replacement gate formation with variable fin pitchIBM·Filed 2021·Granted Mar 18, 2025·2 cites·7 claims
- 1693US10553700B2Gate cut in RMGIBM·Filed 2018·Granted Feb 4, 2020·6 cites·12 claims
- 1793US9601335B2Trench formation for dielectric filled cut regionIBM·Filed 2016·Granted Mar 21, 2017·7 cites·13 claims
- 1892US11081568B2Protective bilayer inner spacer for nanosheet devicesIBM·Filed 2019·Granted Aug 3, 2021·6 cites·20 claims
- 1992US10692990B2Gate cut in RMGIBM·Filed 2019·Granted Jun 23, 2020·5 cites·18 claims
- 2092US9698101B2Self-aligned local interconnect technologyIBM·Filed 2015·Granted Jul 4, 2017·6 cites·19 claims
- 2192US9406767B1POC process flow for conformal recess fillIBM·Filed 2016·Granted Aug 2, 2016·6 cites·1 claims
- 2291USRE50613EFinFET gate cut after dummy gate removalADEIA SEMICONDUCTOR SOLUTIONS LLC·Filed 2022·Granted Sep 30, 2025·1 cites·38 claims
- 2391US10998314B2Gate cut with integrated etch stop layerTESSERA INC·Filed 2020·Granted May 4, 2021·2 cites·17 claims
- 2491US10242981B2Fin cut during replacement gate formationIBM·Filed 2017·Granted Mar 26, 2019·5 cites·17 claims
- 2591US9837276B2Gate cut with high selectivity to preserve interlevel dielectric layerIBM·Filed 2016·Granted Dec 5, 2017·5 cites·20 claims
- 2691US9601366B2Trench formation for dielectric filled cut regionIBM·Filed 2015·Granted Mar 21, 2017·6 cites·7 claims
- 2790US10790148B2Method to increase effective gate heightGLOBALFOUNDRIES INC·Filed 2018·Granted Sep 29, 2020·6 cites·20 claims
- 2890US10622482B2Gate cut using selective deposition to prevent oxide lossIBM·Filed 2019·Granted Apr 14, 2020·4 cites·16 claims
- 2990US2025142949A1Gate cut with integrated etch stop layerTESSERA LLC·Filed 2024·Application pending·0 cites
- 3089US10943990B2Gate contact over active enabled by alternative spacer scheme and claw-shaped capIBM·Filed 2018·Granted Mar 9, 2021·5 cites·15 claims
- 3189US10790372B2Direct gate metal cut using selective deposition to protect the gate end line from metal shortsIBM·Filed 2019·Granted Sep 29, 2020·5 cites·17 claims
- 3289US9634110B2POC process flow for conformal recess fillIBM·Filed 2016·Granted Apr 25, 2017·4 cites·13 claims
- 3388US12074165B2Gate cut with integrated etch stop layerTESSERA LLC·Filed 2023·Granted Aug 27, 2024·0 cites·20 claims
- 3488US10699965B1Removal of epitaxy defects in transistorsIBM·Filed 2019·Granted Jun 30, 2020·4 cites·20 claims
- 3588US10504798B2Gate cut in replacement metal gate processGLOBALFOUNDRIES INC·Filed 2018·Granted Dec 10, 2019·5 cites·5 claims
- 3686US12224312B2Field effect transistors with bottom dielectric isolationIBM·Filed 2021·Granted Feb 11, 2025·1 cites·10 claims
- 3786US10347540B1Gate cut using selective deposition to prevent oxide lossIBM·Filed 2017·Granted Jul 9, 2019·3 cites·20 claims
- 3886US10224326B2Fin cut during replacement gate formationIBM·Filed 2017·Granted Mar 5, 2019·3 cites·20 claims
- 3985US10903111B2Semiconductor device with linerless contactsIBM·Filed 2019·Granted Jan 26, 2021·4 cites·11 claims
- 4085US9935003B2HDP fill with reduced void formation and spacer damageIBM·Filed 2017·Granted Apr 3, 2018·2 cites·19 claims
- 4184US10672910B2Threshold voltage adjustment from oxygen vacancy by scavenge metal filling at gate cut (CT)IBM·Filed 2018·Granted Jun 2, 2020·3 cites·9 claims
- 4283US11387319B2Nanosheet transistor device with bottom isolationIBM·Filed 2019·Granted Jul 12, 2022·2 cites·20 claims
- 4383US11024715B2FinFET gate cut after dummy gate removalTESSERA INC·Filed 2020·Granted Jun 1, 2021·1 cites·20 claims
- 4482US10381458B2Semiconductor device replacement metal gate with gate cut last in RMGIBM·Filed 2015·Granted Aug 13, 2019·3 cites·11 claims
- 4580US11282961B2Enhanced bottom dielectric isolation in gate-all-around devicesIBM·Filed 2020·Granted Mar 22, 2022·1 cites·20 claims
- 4680US11227923B2Wrap around contact process margin improvement with early contact cutIBM·Filed 2020·Granted Jan 18, 2022·1 cites·20 claims
- 4780US10580773B2Gate cut with integrated etch stop layerIBM·Filed 2018·Granted Mar 3, 2020·1 cites·20 claims
- 4880US10083861B2HDP fill with reduced void formation and spacer damageIBM·Filed 2017·Granted Sep 25, 2018·1 cites·20 claims
- 4978US10186599B1Forming self-aligned contact with spacer firstIBM·Filed 2017·Granted Jan 22, 2019·2 cites·17 claims
- 5077US11075281B2Additive core subtractive liner for metal cut etch processesIBM·Filed 2019·Granted Jul 27, 2021·1 cites·20 claims
Showing the top 50 of 154 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →