Inventor · disambiguated record
Atsuki Fukazawa
Also filed as: FUKAZAWA ATSUKI
79 granted patents·17 pending applications·19,096 citations·filing 1999–2024
99Inventor score
Top patents by PatentIndex Score
96 records- 0199US10186420B2Formation of silicon-containing thin filmsASM IP HOLDING BV·Filed 2017·Granted Jan 22, 2019·472 cites·21 claims
- 0299US10179947B2Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer depositionASM IP HOLDING BV·Filed 2013·Granted Jan 15, 2019·413 cites·11 claims
- 0399US9812319B1Method for forming film filled in trench without seam or voidASM IP HOLDING BV·Filed 2016·Granted Nov 7, 2017·486 cites·16 claims
- 0499US9627221B1Continuous process incorporating atomic layer etchingASM IP HOLDING BV·Filed 2015·Granted Apr 18, 2017·507 cites·17 claims
- 0599US9455138B1Method for forming dielectric film in trenches by PEALD using H-containing gasASM IP HOLDING BV·Filed 2015·Granted Sep 27, 2016·587 cites·20 claims
- 0699US9396956B1Method of plasma-enhanced atomic layer etchingASM IP HOLDING BV·Filed 2015·Granted Jul 19, 2016·518 cites·16 claims
- 0799US9368352B2Methods for forming doped silicon oxide thin filmsASM INT·Filed 2014·Granted Jun 14, 2016·469 cites·19 claims
- 0899US9343297B1Method for forming multi-element thin film constituted by at least five elements by PEALDASM IP HOLDING BV·Filed 2015·Granted May 17, 2016·471 cites·20 claims
- 0999US9153441B2Methods for forming doped silicon oxide thin filmsASM INT·Filed 2014·Granted Oct 6, 2015·473 cites·17 claims
- 1099US8679958B2Methods for forming doped silicon oxide thin filmsASM INT·Filed 2012·Granted Mar 25, 2014·484 cites·26 claims
- 1199US8003174B2Method for forming dielectric film using siloxane-silazane mixtureASM JAPAN·Filed 2007·Granted Aug 23, 2011·521 cites·14 claims
- 1299US7919416B2Method of forming conformal dielectric film having Si-N bonds by PECVDASM JAPAN·Filed 2009·Granted Apr 5, 2011·598 cites·20 claims
- 1399US7842622B1Method of forming highly conformal amorphous carbon layerASM JAPAN·Filed 2009·Granted Nov 30, 2010·524 cites·17 claims
- 1499US7622369B1Device isolation technology on semiconductor substrateASM JAPAN·Filed 2008·Granted Nov 24, 2009·604 cites·16 claims
- 1598US10468251B2Method for forming spacers using silicon nitride film for spacer-defined multiple patterningASM IP HOLDING BV·Filed 2017·Granted Nov 5, 2019·379 cites·9 claims
- 1698US10395917B2Si precursors for deposition of SiN at low temperaturesASM IP HOLDING BV·Filed 2018·Granted Aug 27, 2019·405 cites·19 claims
- 1798US10147600B2Methods for forming doped silicon oxide thin filmsASM INT NV·Filed 2018·Granted Dec 4, 2018·417 cites·20 claims
- 1898US9905416B2Si precursors for deposition of SiN at low temperaturesASM IP HOLDING BV·Filed 2017·Granted Feb 27, 2018·19 cites·19 claims
- 1998US9875893B2Methods for forming doped silicon oxide thin filmsASM INT NV·Filed 2017·Granted Jan 23, 2018·419 cites·20 claims
- 2098US9754779B1Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenchesASM IP HOLDING BV·Filed 2016·Granted Sep 5, 2017·484 cites·15 claims
- 2198US9564314B2Methods for forming doped silicon oxide thin filmsASM INT NV·Filed 2015·Granted Feb 7, 2017·465 cites·28 claims
- 2298US9023737B2Method for forming conformal, homogeneous dielectric film by cyclic deposition and heat treatmentASM IP HOLDING BV·Filed 2013·Granted May 5, 2015·544 cites·14 claims
- 2398US8912101B2Method for forming Si-containing film using two precursors by ALDASM IP HOLDING BV·Filed 2013·Granted Dec 16, 2014·522 cites·17 claims
- 2498US8784950B2Method for forming aluminum oxide film using Al compound containing alkyl group and alkoxy or alkylamine groupFUKAZAWA ATSUKI·Filed 2012·Granted Jul 22, 2014·519 cites·7 claims
- 2598US8722546B2Method for forming silicon-containing dielectric film by cyclic deposition with side wall coverage controlFUKAZAWA ATSUKI·Filed 2012·Granted May 13, 2014·554 cites·20 claims
- 2698US8647722B2Method of forming insulation film using plasma treatment cyclesKOBAYASHI AKIKO·Filed 2009·Granted Feb 11, 2014·541 cites·18 claims
- 2798US8563443B2Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogenFUKAZAWA ATSUKI·Filed 2012·Granted Oct 22, 2013·525 cites·16 claims
- 2898US8329599B2Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogenFUKAZAWA ATSUKI·Filed 2011·Granted Dec 11, 2012·575 cites·20 claims
- 2998US7781352B2Method for forming inorganic silazane-based dielectric filmASM JAPAN·Filed 2007·Granted Aug 24, 2010·480 cites·14 claims
- 3098US7651959B2Method for forming silazane-based dielectric filmASM JAPAN·Filed 2007·Granted Jan 26, 2010·589 cites·25 claims
- 3198US7582575B2Method for forming insulation filmASM JAPAN·Filed 2005·Granted Sep 1, 2009·467 cites·18 claims
- 3298US7354873B2Method for forming insulation filmASM JAPAN·Filed 2006·Granted Apr 8, 2008·479 cites·40 claims
- 3397US10435790B2Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gapASM IP HOLDING BV·Filed 2016·Granted Oct 8, 2019·397 cites·19 claims
- 3497US9564309B2Si precursors for deposition of SiN at low temperaturesASM IP HOLDING BV·Filed 2014·Granted Feb 7, 2017·29 cites·16 claims
- 3596US9142393B2Method for cleaning reaction chamber using pre-cleaning processASM IP HOLDING BV·Filed 2013·Granted Sep 22, 2015·521 cites·15 claims
- 3696US8241991B2Method for forming interconnect structure having airgapHSIEH JULIAN J·Filed 2010·Granted Aug 14, 2012·522 cites·13 claims
- 3796US7825040B1Method for depositing flowable material using alkoxysilane or aminosilane precursorASM JAPAN·Filed 2009·Granted Nov 2, 2010·545 cites·14 claims
- 3895US10529554B2Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenchesASM IP HOLDING BV·Filed 2017·Granted Jan 7, 2020·377 cites·13 claims
- 3995US8784951B2Method for forming insulation film using non-halide precursor having four or more siliconsASM IP HOLDING BV·Filed 2012·Granted Jul 22, 2014·518 cites·15 claims
- 4094US10655221B2Method for depositing oxide film by thermal ALD and PEALDASM IP HOLDING BV·Filed 2018·Granted May 19, 2020·4 cites·15 claims
- 4194US10395919B2Method and apparatus for filling a gapASM IP HOLDING BV·Filed 2016·Granted Aug 27, 2019·402 cites·21 claims
- 4294US6881683B2Insulation film on semiconductor substrate and method for forming sameASM JAPAN·Filed 2002·Granted Apr 19, 2005·51 cites·28 claims
- 4393US10755922B2Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted depositionASM IP HOLDING BV·Filed 2019·Granted Aug 25, 2020·8 cites·19 claims
- 4493US9818601B1Substrate processing apparatus and method of processing substrateASM IP HOLDING BV·Filed 2016·Granted Nov 14, 2017·12 cites·7 claims
- 4593US7064088B2Method for forming low-k hard filmASM JAPAN·Filed 2003·Granted Jun 20, 2006·62 cites·31 claims
- 4692US10510530B2Methods for forming doped silicon oxide thin filmsASM INT NV·Filed 2018·Granted Dec 17, 2019·3 cites·18 claims
- 4790US11069522B2Si precursors for deposition of SiN at low temperaturesASM IP HOLDING BV·Filed 2019·Granted Jul 20, 2021·3 cites·18 claims
- 4889US10784105B2Methods for forming doped silicon oxide thin filmsASM INT NV·Filed 2019·Granted Sep 22, 2020·2 cites·20 claims
- 4987US11453943B2Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursorASM IP HOLDING BV·Filed 2017·Granted Sep 27, 2022·2 cites·13 claims
- 5087US11302527B2Methods for forming doped silicon oxide thin filmsASM INT NV·Filed 2020·Granted Apr 12, 2022·1 cites·20 claims
Showing the top 50 of 96 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →