Inventor · disambiguated record
Bradley J. Howard
Also filed as: HOWARD BRADLEY · HOWARD BRADLEY J
59 granted patents·8 pending applications·1,128 citations·filing 1995–2022
99Inventor score
Top patents by PatentIndex Score
67 records- 0198US9543163B2Methods for forming features in a material layer utilizing a combination of a main etching and a cyclical etching processAPPLIED MATERIALS INC·Filed 2013·Granted Jan 10, 2017·114 cites·19 claims
- 0298US9287095B2Semiconductor system assemblies and methods of operationAPPLIED MATERIALS INC·Filed 2013·Granted Mar 15, 2016·153 cites·17 claims
- 0398US8980758B1Methods for etching an etching stop layer utilizing a cyclical etching processAPPLIED MATERIALS INC·Filed 2013·Granted Mar 17, 2015·192 cites·18 claims
- 0492US5438011AMethod of forming a capacitor using a photoresist contact sidewall having standing wave ripplesMICRON TECHNOLOGY INC·Filed 1995·Granted Aug 1, 1995·114 cites·25 claims
- 0588US9761416B2Apparatus and methods for reducing particles in semiconductor process chambersAPPLIED MATERIALS INC·Filed 2014·Granted Sep 12, 2017·7 cites·2 claims
- 0688US7884925B2Electrical and optical system and methods for monitoring erosion of electrostatic chuck edge bead materialsLAM RES CORP·Filed 2008·Granted Feb 8, 2011·9 cites·14 claims
- 0787US7538028B2Barrier layer, IC via, and IC line forming methodsMICRON TECHNOLOGY INC·Filed 2006·Granted May 26, 2009·13 cites·18 claims
- 0884US6716763B2Method of controlling striations and CD loss in contact oxide etchMICRON TECHNOLOGY INC·Filed 2001·Granted Apr 6, 2004·20 cites·35 claims
- 0982US7122480B2Method of plasma etching a substrateMICRON TECHNOLOGY INC·Filed 2004·Granted Oct 17, 2006·16 cites·26 claims
- 1081US6753264B2Method of controlling striations and CD loss in contact oxide etchMICRON TECHNOLOGY INC·Filed 2001·Granted Jun 22, 2004·15 cites·17 claims
- 1181US5897372AFormation of a self-aligned integrated circuit structure using silicon-rich nitride as a protective layerMICRON TECHNOLOGY INC·Filed 1995·Granted Apr 27, 1999·56 cites·26 claims
- 1280US7470625B2Method of plasma etching a substrateMICRON TECHNOLOGY INC·Filed 2006·Granted Dec 30, 2008·4 cites·14 claims
- 1380US6232219B1Self-limiting method of reducing contamination in a contact opening, method of making contacts and semiconductor devices therewith, and resulting structuresMICRON TECHNOLOGY INC·Filed 1998·Granted May 15, 2001·49 cites·28 claims
- 1479US7625460B2Multifrequency plasma reactorMICRON TECHNOLOGY INC·Filed 2003·Granted Dec 1, 2009·12 cites·21 claims
- 1577US7952694B2Optical system and methods for monitoring erosion of electrostatic chuck edge bead materialsLAM RES CORP·Filed 2010·Granted May 31, 2011·3 cites·16 claims
- 1677US6221205B1Apparatus for improving the performance of a temperature-sensitive etchMICRON TECHNOLOGY INC·Filed 2000·Granted Apr 24, 2001·14 cites·21 claims
- 1775US5750441AMask having a tapered profile used during the formation of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 1996·Granted May 12, 1998·37 cites·20 claims
- 1874US12049961B2Chamber body design architecture for next generation advanced plasma technologyAPPLIED MATERIALS INC·Filed 2022·Granted Jul 30, 2024·0 cites·20 claims
- 1973US9359679B2Methods for cyclically etching a metal layer for an interconnection structure for semiconductor applicationsAPPLIED MATERIALS INC·Filed 2014·Granted Jun 7, 2016·2 cites·17 claims
- 2073US7271089B2Barrier layer, IC via, and IC line forming methodsMICRON TECHNOLOGY INC·Filed 2004·Granted Sep 18, 2007·15 cites·31 claims
- 2169US6350706B1Process for using photo-definable layers in the manufacture of semiconductor devices and resulting structures of sameMICRON TECHNOLOGY INC·Filed 1998·Granted Feb 26, 2002·28 cites·31 claims
- 2268US10770269B2Apparatus and methods for reducing particles in semiconductor process chambersAPPLIED MATERIALS INC·Filed 2017·Granted Sep 8, 2020·0 cites·9 claims
- 2366US5711851AProcess for improving the performance of a temperature-sensitive etch processMICRON TECHNOLOGY INC·Filed 1996·Granted Jan 27, 1998·22 cites·12 claims
- 2465US6056850AApparatus for improving the performance of a temperature-sensitive etch processMICRON TECHNOLOGY INC·Filed 1998·Granted May 2, 2000·21 cites·19 claims
- 2564US6492279B1Plasma etching methodsMICRON TECHNOLOGY INC·Filed 2000·Granted Dec 10, 2002·7 cites·38 claims
- 2663US6730609B2Etch aided by electrically shorting upper and lower sidewall portions during the formation of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2001·Granted May 4, 2004·6 cites·6 claims
- 2763US6524875B2Method for manufacturing tapered opening using an anisotropic etch during the formation of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2001·Granted Feb 25, 2003·8 cites·11 claims
- 2861US5966611ASemiconductor processing for forming capacitors by etching polysilicon and coating layer formed over the polysiliconMICRON TECHNOLOGY INC·Filed 1998·Granted Oct 12, 1999·21 cites·42 claims
- 2960US8093155B2Method of controlling striations and CD loss in contact oxide etchLI LI·Filed 2008·Granted Jan 10, 2012·0 cites·20 claims
- 3060US6335292B1Method of controlling striations and CD loss in contact oxide etchMICRON TECHNOLOGY INC·Filed 1999·Granted Jan 1, 2002·14 cites·45 claims
- 3159US9960052B2Methods for etching a metal layer to form an interconnection structure for semiconductor applicationsAPPLIED MATERIALS INC·Filed 2014·Granted May 1, 2018·1 cites·16 claims
- 3257US5686357AMethod for forming a contact during the formation of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 1995·Granted Nov 11, 1997·17 cites·14 claims
- 3356US6413875B1Process and apparatus for improving the performance of a temperature-sensitive etch processMICRON TECHNOLOGY INC·Filed 2000·Granted Jul 2, 2002·3 cites·8 claims
- 3455US5888877AMethod of forming recessed container cellsMICRON TECHNOLOGY INC·Filed 1997·Granted Mar 30, 1999·15 cites·40 claims
- 3554US7573116B2Etch aided by electrically shorting upper and lower sidewall portions during the formation of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2006·Granted Aug 11, 2009·0 cites·20 claims
- 3654US6025271AMethod of removing surface defects or other recesses during the formation of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 1997·Granted Feb 15, 2000·14 cites·24 claims
- 3753US6420259B1Formation of a self-aligned structureMICRON TECHNOLOGY INC·Filed 2000·Granted Jul 16, 2002·4 cites·31 claims
- 3852US7094699B2Etch aided by electrically shorting upper and lower sidewall portions during the formation of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2004·Granted Aug 22, 2006·2 cites·21 claims
- 3952US5851916AFormation of a self-aligned integrated circuit structures using planarization to form a top surfaceMICRON TECHNOLOGY INC·Filed 1995·Granted Dec 22, 1998·14 cites·30 claims
- 4051US11333246B2Chamber body design architecture for next generation advanced plasma technologyAPPLIED MATERIALS INC·Filed 2015·Granted May 17, 2022·0 cites·16 claims
- 4151US7255803B2Method of forming contact openingsMICRON TECHNOLOGY INC·Filed 2006·Granted Aug 14, 2007·0 cites·15 claims
- 4251US6355566B1Method of removing surface defects or other recesses during the formation of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2001·Granted Mar 12, 2002·3 cites·25 claims
- 4351US6329109B1Mask having a tapered profile used during the formation of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 1998·Granted Dec 11, 2001·12 cites·22 claims
- 4450US6117767AMethod of forming an integrated circuit structureMICRON TECHNOLOGY INC·Filed 1999·Granted Sep 12, 2000·13 cites·27 claims
- 4549US6127239ASemiconductor processing methods, and methods of forming capacitorsMICRON TECHNOLOGY INC·Filed 1999·Granted Oct 3, 2000·12 cites·18 claims
- 4649US2014308758A1Patterning magnetic memoryAPPLIED MATERIALS INC·Filed 2013·Application pending·0 cites
- 4748US6274936B1Method for forming a contact during the formation of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2000·Granted Aug 14, 2001·2 cites·11 claims
- 4847US2016217981A1Semiconductor system assemblies and methods of operationAPPLIED MATERIALS INC·Filed 2016·Application pending·0 cites
- 4946US2015200042A1Recessing ultra-low k dielectric using remote plasma sourceAPPLIED MATERIALS INC·Filed 2014·Application pending·0 cites
- 5045US6228772B1Method of removing surface defects or other recesses during the formation of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2000·Granted May 8, 2001·1 cites·25 claims
Showing the top 50 of 67 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →