Inventor · disambiguated record
Fumitaka Amano
Also filed as: AMANO FUMITAKA
25 granted patents·7 pending applications·225 citations·filing 2007–2024
94Inventor score
Top patents by PatentIndex Score
32 records- 0198US10276583B2Three-dimensional memory device containing composite word lines including a metal silicide and an elemental metal and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Apr 30, 2019·51 cites·13 claims
- 0297US10529620B2Three-dimensional memory device containing word lines formed by selective tungsten growth on nucleation controlling surfaces and methods of manufacturing the sameSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jan 7, 2020·23 cites·10 claims
- 0397US9929174B1Three-dimensional memory device having non-uniform spacing among memory stack structures and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Mar 27, 2018·38 cites·26 claims
- 0496US10361213B2Three dimensional memory device containing multilayer wordline barrier films and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jul 23, 2019·22 cites·11 claims
- 0596US10115735B2Semiconductor device containing multilayer titanium nitride diffusion barrier and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Oct 30, 2018·24 cites·9 claims
- 0696US9748174B1Three-dimensional memory device having multi-layer diffusion barrier stack and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Aug 29, 2017·38 cites·10 claims
- 0795US11935784B2Three-dimensional memory device containing self-aligned bit line contacts and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Mar 19, 2024·4 cites·20 claims
- 0891US11637038B2Three-dimensional memory device containing self-aligned lateral contact elements and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Apr 25, 2023·3 cites·9 claims
- 0991US10381372B2Selective tungsten growth for word lines of a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Aug 13, 2019·10 cites·12 claims
- 1085US11309402B2Semiconductor device containing tubular liner spacer for lateral confinement of self-aligned silicide portions and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Apr 19, 2022·2 cites·20 claims
- 1182US11437270B2Three-dimensional memory device containing word lines formed by selective tungsten growth on nucleation controlling surfaces and methods of manufacturing the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Sep 6, 2022·2 cites·20 claims
- 1277US7981794B2Film forming method and substrate processing apparatusTOKYO ELECTRON LTD·Filed 2007·Granted Jul 19, 2011·6 cites·16 claims
- 1374US9607888B2Integration of ALD barrier layer and CVD Ru liner for void-free Cu fillingTOKYO ELECTRON LTD·Filed 2015·Granted Mar 28, 2017·2 cites·20 claims
- 1462US11296112B2Multi-layer barrier for CMOS under array type memory device and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Apr 5, 2022·0 cites·7 claims
- 1560US12451451B2Bonded assembly including interconnect-level bonding pads and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Oct 21, 2025·0 cites·20 claims
- 1659US12456699B2Semiconductor devices containing copper bonding pads with different conductive barrier layers and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Oct 28, 2025·0 cites·10 claims
- 1759US10662522B1Thermal metal chemical vapor deposition processSANDISK TECHNOLOGIES LLC·Filed 2018·Granted May 26, 2020·0 cites·20 claims
- 1859US2025285887A1Method of making a semiconductor device using an edge bevel removal system containing a gas nozzleSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
- 1959US2025107079A1Three-dimensional memory device with isolation trench fill structure having laterally-undulating sidewalls and method of making the sameWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
- 2058US12456688B2High aspect ratio via fill process employing selective metal deposition and structures formed by the sameSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Oct 28, 2025·0 cites·20 claims
- 2158US2025132301A1Metal lines located between etch stop layers and separated by air gaps and methods of forming the sameWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
- 2255US12087628B2High aspect ratio via fill process employing selective metal deposition and structures formed by the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Sep 10, 2024·0 cites·12 claims
- 2353US12482751B2Three-dimensional memory device including composite backside metal fill structures and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Nov 25, 2025·0 cites·15 claims
- 2452US2020149164A1Thermal metal chemical vapor deposition apparatus and processSANDISK TECHNOLOGIES LLC·Filed 2018·Application pending·0 cites
- 2551US12087626B2High aspect ratio via fill process employing selective metal deposition and structures formed by the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Sep 10, 2024·0 cites·19 claims
- 2649US11990413B2Three-dimensional memory device including aluminum alloy word lines and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted May 21, 2024·0 cites·10 claims
- 2749US2024282710A1Semiconductor device containing divot-fill dielectric barrier for metal-to-metal contacts and methods for manufacturing the sameSANDISK TECHNOLOGIES LLC·Filed 2023·Application pending·0 cites
- 2848US12408337B2Three-dimensional memory device including composite backside metal fill structures and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Sep 2, 2025·0 cites·5 claims
- 2947US11488975B2Multi-tier three-dimensional memory device with nested contact via structures and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Nov 1, 2022·0 cites·14 claims
- 3047US2018331118A1Multi-layer barrier for cmos under array type memory device and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Application pending·0 cites
- 3145US2017247794A1Single chamber multi-partition deposition tool and method of operating sameSANDISK TECHNOLOGIES LLC·Filed 2016·Application pending·0 cites
- 3244US9558962B2Substrate processing methodTOKYO ELECTRON LTD·Filed 2015·Granted Jan 31, 2017·0 cites·21 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →