Inventor · disambiguated record
Hartmut Ruelke
Also filed as: RUELKE HARTMUT
32 granted patents·6 pending applications·302 citations·filing 2000–2013
97Inventor score
Top patents by PatentIndex Score
38 records- 0185US6797652B1Copper damascene with low-k capping layer and improved electromigration reliabilityADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 28, 2004·35 cites·12 claims
- 0285US6599827B1Methods of forming capped copper interconnects with improved electromigration resistanceADVANCED MICRO DEVICES INC·Filed 2001·Granted Jul 29, 2003·41 cites·18 claims
- 0382US6506677B1Method of forming capped copper interconnects with reduced hillock formation and improved electromigration resistanceADVANCED MICRO DEVICES INC·Filed 2001·Granted Jan 14, 2003·34 cites·18 claims
- 0480US7381602B2Method of forming a field effect transistor comprising a stressed channel regionADVANCED MICRO DEVICES INC·Filed 2005·Granted Jun 3, 2008·9 cites·39 claims
- 0577US7326646B2Nitrogen-free ARC layer and a method of manufacturing the sameADVANCED MICRO DEVICES INC·Filed 2005·Granted Feb 5, 2008·6 cites·27 claims
- 0676US6368948B1Method of forming capped copper interconnects with reduced hillocksADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 9, 2002·25 cites·17 claims
- 0773US8338284B2Stress engineering in a contact level of semiconductor devices by stressed conductive layers and an isolation spacerFROHBERG KAI·Filed 2010·Granted Dec 25, 2012·4 cites·15 claims
- 0873US8084088B2Method of improving the wafer-to-wafer thickness uniformity of silicon nitride layersHUY KATJA·Filed 2004·Granted Dec 27, 2011·20 cites·24 claims
- 0973US6893956B2Barrier layer for a copper metallization layer including a low-k dielectricADVANCED MICRO DEVICES INC·Filed 2003·Granted May 17, 2005·20 cites·41 claims
- 1071US7998882B2Particle reduction in PECVD processes for depositing low-k material by using a plasma assisted post-deposition stepGLOBALFOUNDRIES INC·Filed 2009·Granted Aug 16, 2011·3 cites·25 claims
- 1170US6596631B1Method of forming copper interconnect capping layers with improved interface and adhesionADVANCED MICRO DEVICES INC·Filed 2000·Granted Jul 22, 2003·17 cites·19 claims
- 1269US8772178B2Technique for forming a dielectric interlayer above a structure including closely spaced linesRUELKE HARTMUT·Filed 2005·Granted Jul 8, 2014·5 cites·29 claims
- 1369US6720242B2Method of forming a substrate contact in a field effect transistor formed over a buried insulator layerADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 13, 2004·18 cites·15 claims
- 1469US6235654B1Process for forming PECVD nitride with a very low deposition rateADVANCED MICRO DEVICES INC·Filed 2000·Granted May 22, 2001·12 cites·12 claims
- 1566US7341903B2Method of forming a field effect transistor having a stressed channel regionADVANCED MICRO DEVICES INC·Filed 2005·Granted Mar 11, 2008·3 cites·14 claims
- 1664US7022602B2Nitrogen-enriched low-k barrier layer for a copper metallization layerADVANCED MICRO DEVICES INC·Filed 2003·Granted Apr 4, 2006·11 cites·17 claims
- 1764US6372668B2Method of forming silicon oxynitride filmsADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 16, 2002·9 cites·14 claims
- 1863US8741787B2Increased density of low-K dielectric materials in semiconductor devices by applying a UV treatmentMAYER ULRICH·Filed 2010·Granted Jun 3, 2014·1 cites·26 claims
- 1962US7314824B2Nitrogen-free ARC/capping layer and method of manufacturing the sameADVANCED MICRO DEVICES INC·Filed 2005·Granted Jan 1, 2008·2 cites·29 claims
- 2061US6221793B1Process for forming PECVD undoped oxide with a super low deposition rate on a single state depositionADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 24, 2001·7 cites·19 claims
- 2156US6927161B2Low-k dielectric layer stack including an etch indicator layer for use in the dual damascene techniqueADVANCED MICRO DEVICES INC·Filed 2003·Granted Aug 9, 2005·8 cites·29 claims
- 2255US6989601B1Copper damascene with low-k capping layer and improved electromigration reliabilityADVANCED MICRO DEVICES INC·Filed 2004·Granted Jan 24, 2006·5 cites·8 claims
- 2354US8847205B2Spacer for a gate electrode having tensile stress and a method of forming the sameGLOBALFOUNDRIES INC·Filed 2013·Granted Sep 30, 2014·0 cites·21 claims
- 2452US6569768B2Surface treatment and capping layer process for producing a copper interface in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2001·Granted May 27, 2003·3 cites·17 claims
- 2546US8211795B2Method of forming a dielectric cap layer for a copper metallization by using a hydrogen based thermal-chemical treatmentHOHAGE JOERG·Filed 2008·Granted Jul 3, 2012·0 cites·22 claims
- 2641US7030044B2Method of forming a cap layer having anti-reflective characteristics on top of a low-k dielectricADVANCED MICRO DEVICES INC·Filed 2003·Granted Apr 18, 2006·4 cites·11 claims
- 2741US2003200984A1Highly efficient remote clean process for process chambers in deposition toolsFiled 2002·Application pending·0 cites
- 2839US8759232B2Compressive stress transfer in an interlayer dielectric of a semiconductor device by providing a bi-layer of superior adhesion and internal stressHOHAGE JOERG·Filed 2012·Granted Jun 24, 2014·0 cites·19 claims
- 2939US8609555B2Increased stability of a complex material stack in a semiconductor device by providing fluorine enriched interfacesSTRECK CHRISTOF·Filed 2011·Granted Dec 17, 2013·0 cites·15 claims
- 3039US7381660B2Dielectric barrier layer for a copper metallization layer having a varying silicon concentration along its thicknessADVANCED MICRO DEVICES INC·Filed 2003·Granted Jun 3, 2008·0 cites·18 claims
- 3139US2008054415A1n-channel field effect transistor having a contact etch stop layer in combination with an interlayer dielectric sub-layer having the same type of intrinsic stressFROHBERG KAI·Filed 2007·Application pending·0 cites
- 3238US8450172B2Non-insulating stressed material layers in a contact level of semiconductor devicesRICHTER RALF·Filed 2010·Granted May 28, 2013·0 cites·18 claims
- 3338US7807233B2Method of forming a TEOS cap layer at low temperature and reduced deposition rateGLOBALFOUNDRIES INC·Filed 2004·Granted Oct 5, 2010·0 cites·24 claims
- 3437US8415257B2Enhanced adhesion of PECVD carbon on dielectric materials by providing an adhesion interfaceRUELKE HARTMUT·Filed 2010·Granted Apr 9, 2013·0 cites·18 claims
- 3537US2004121265A1Technique for reducing resist poisoning in forming a metallization layer including a low-k dielectricFiled 2003·Application pending·0 cites
- 3636US2002076843A1Semiconductor structure having a silicon oxynitride ARC layer and a method of forming the sameFiled 2001·Application pending·0 cites
- 3736US2003072695A1Method of removing oxidized portions at an interface of a metal surface and capping layer in a semiconductor metallization layerFiled 2002·Application pending·0 cites
- 3835US2006043588A1Semiconductor device including a low-k metallization layer stack for enhanced resistance against electromigrationSTRECK CHRISTOF·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →