Inventor · disambiguated record
Hiroji Hanawa
Also filed as: HANAWA HIROJI
110 granted patents·32 pending applications·10,775 citations·filing 1987–2020
99Inventor score
Top patents by PatentIndex Score
142 records- 0199US7695590B2Chemical vapor deposition plasma reactor having plural ion shower gridsAPPLIED MATERIALS INC·Filed 2004·Granted Apr 13, 2010·195 cites·31 claims
- 0299US7429532B2Semiconductor substrate process using an optically writable carbon-containing maskAPPLIED MATERIALS INC·Filed 2005·Granted Sep 30, 2008·539 cites·18 claims
- 0399US7422775B2Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealingAPPLIED MATERIALS INC·Filed 2005·Granted Sep 9, 2008·535 cites·17 claims
- 0499US7393765B2Low temperature CVD process with selected stress of the CVD layer on CMOS devicesAPPLIED MATERIALS INC·Filed 2007·Granted Jul 1, 2008·562 cites·16 claims
- 0599US7335611B2Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layerAPPLIED MATERIALS INC·Filed 2005·Granted Feb 26, 2008·535 cites·20 claims
- 0699US7323401B2Semiconductor substrate process using a low temperature deposited carbon-containing hard maskAPPLIED MATERIALS INC·Filed 2005·Granted Jan 29, 2008·580 cites·17 claims
- 0799US7312148B2Copper barrier reflow process employing high speed optical annealingAPPLIED MATERIALS INC·Filed 2005·Granted Dec 25, 2007·537 cites·21 claims
- 0899US7312162B2Low temperature plasma deposition process for carbon layer depositionAPPLIED MATERIALS INC·Filed 2005·Granted Dec 25, 2007·544 cites·19 claims
- 0999US7109098B1Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealingAPPLIED MATERIALS INC·Filed 2005·Granted Sep 19, 2006·551 cites·15 claims
- 1099US6679981B1Inductive plasma loop enhancing magnetron sputteringAPPLIED MATERIALS INC·Filed 2000·Granted Jan 20, 2004·329 cites·11 claims
- 1198US7291360B2Chemical vapor deposition plasma process using plural ion shower gridsAPPLIED MATERIALS INC·Filed 2004·Granted Nov 6, 2007·186 cites·62 claims
- 1298US7244474B2Chemical vapor deposition plasma process using an ion shower gridAPPLIED MATERIALS INC·Filed 2004·Granted Jul 17, 2007·195 cites·70 claims
- 1398US7094670B2Plasma immersion ion implantation processAPPLIED MATERIALS INC·Filed 2005·Granted Aug 22, 2006·79 cites·23 claims
- 1498US6348126B1Externally excited torroidal plasma sourceAPPLIED MATERIALS INC·Filed 2000·Granted Feb 19, 2002·121 cites·31 claims
- 1598US6083344AMulti-zone RF inductively coupled source configurationAPPLIED MATERIALS INC·Filed 1997·Granted Jul 4, 2000·346 cites·18 claims
- 1698US5849136AHigh frequency semiconductor wafer processing apparatus and methodAPPLIED MATERIALS INC·Filed 1996·Granted Dec 15, 1998·188 cites·11 claims
- 1798US5449432AMethod of treating a workpiece with a plasma and processing reactor having plasma igniter and inductive coupler for semiconductor fabricationAPPLIED MATERIALS INC·Filed 1993·Granted Sep 12, 1995·154 cites·25 claims
- 1897US7465478B2Plasma immersion ion implantation processAPPLIED MATERIALS INC·Filed 2005·Granted Dec 16, 2008·39 cites·18 claims
- 1997US7291545B2Plasma immersion ion implantation process using a capacitively couple plasma source having low dissociation and low minimum plasma voltageAPPLIED MATERIALS INC·Filed 2005·Granted Nov 6, 2007·73 cites·20 claims
- 2097US7292428B2Electrostatic chuck with smart lift-pin mechanism for a plasma reactorAPPLIED MATERIALS INC·Filed 2005·Granted Nov 6, 2007·57 cites·20 claims
- 2197US6939434B2Externally excited torroidal plasma source with magnetic control of ion distributionAPPLIED MATERIALS INC·Filed 2002·Granted Sep 6, 2005·72 cites·48 claims
- 2297US6924641B1Method and apparatus for monitoring a metal layer during chemical mechanical polishingAPPLIED MATERIALS INC·Filed 2000·Granted Aug 2, 2005·63 cites·28 claims
- 2397US6893907B2Fabrication of silicon-on-insulator structure using plasma immersion ion implantationAPPLIED MATERIALS INC·Filed 2004·Granted May 17, 2005·127 cites·59 claims
- 2497US6551446B1Externally excited torroidal plasma source with a gas distribution plateAPPLIED MATERIALS INC·Filed 2000·Granted Apr 22, 2003·96 cites·9 claims
- 2597US6410449B1Method of processing a workpiece using an externally excited torroidal plasma sourceAPPLIED MATERIALS INC·Filed 2000·Granted Jun 25, 2002·88 cites·8 claims
- 2697US6189483B1Process kitAPPLIED MATERIALS INC·Filed 1997·Granted Feb 20, 2001·341 cites·23 claims
- 2797US6170428B1Symmetric tunable inductively coupled HDP-CVD reactorAPPLIED MATERIALS INC·Filed 1996·Granted Jan 9, 2001·430 cites·26 claims
- 2897US5688357AAutomatic frequency tuning of an RF power source of an inductively coupled plasma reactorAPPLIED MATERIALS INC·Filed 1995·Granted Nov 18, 1997·151 cites·30 claims
- 2997US5618382AHigh-frequency semiconductor wafer processing apparatus and methodAPPLIED MATERIALS INC·Filed 1993·Granted Apr 8, 1997·125 cites·7 claims
- 3096US8709924B2Method for conformal plasma immersed ion implantation assisted by atomic layer depositionHANAWA HIROJI·Filed 2011·Granted Apr 29, 2014·30 cites·7 claims
- 3196US7968469B2Method of processing a workpiece in a plasma reactor with variable height ground return path to control plasma ion density uniformityAPPLIED MATERIALS INC·Filed 2007·Granted Jun 28, 2011·46 cites·26 claims
- 3296US7288491B2Plasma immersion ion implantation processAPPLIED MATERIALS INC·Filed 2005·Granted Oct 30, 2007·41 cites·22 claims
- 3396US7183177B2Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancementAPPLIED MATERIALS INC·Filed 2004·Granted Feb 27, 2007·119 cites·27 claims
- 3495US7666464B2RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactorAPPLIED MATERIALS INC·Filed 2004·Granted Feb 23, 2010·63 cites·39 claims
- 3595US7229340B2Monitoring a metal layer during chemical mechanical polishingAPPLIED MATERIALS INC·Filed 2006·Granted Jun 12, 2007·15 cites·23 claims
- 3695US7137354B2Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltageAPPLIED MATERIALS INC·Filed 2003·Granted Nov 21, 2006·63 cites·79 claims
- 3795US7037813B2Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltageAPPLIED MATERIALS INC·Filed 2003·Granted May 2, 2006·76 cites·86 claims
- 3895US6975107B2Eddy current sensing of metal removal for chemical mechanical polishingAPPLIED MATERIALS INC·Filed 2003·Granted Dec 13, 2005·35 cites·14 claims
- 3995US6494986B1Externally excited multiple torroidal plasma sourceAPPLIED MATERIALS INC·Filed 2000·Granted Dec 17, 2002·65 cites·32 claims
- 4095US6468388B1Reactor chamber for an externally excited torroidal plasma source with a gas distribution plateAPPLIED MATERIALS INC·Filed 2000·Granted Oct 22, 2002·66 cites·21 claims
- 4195US6453842B1Externally excited torroidal plasma source using a gas distribution plateAPPLIED MATERIALS INC·Filed 2000·Granted Sep 24, 2002·62 cites·11 claims
- 4295US5431799ACollimation hardware with RF bias rings to enhance sputter and/or substrate cavity ion generation efficiencyAPPLIED MATERIALS INC·Filed 1993·Granted Jul 11, 1995·105 cites·23 claims
- 4394US10403535B2Method and apparatus of processing wafers with compressive or tensile stress at elevated temperatures in a plasma enhanced chemical vapor deposition systemAPPLIED MATERIALS INC·Filed 2015·Granted Sep 3, 2019·11 cites·17 claims
- 4494US5710486AInductively and multi-capacitively coupled plasma reactorAPPLIED MATERIALS INC·Filed 1995·Granted Jan 20, 1998·139 cites·31 claims
- 4594US5451784AComposite diagnostic wafer for semiconductor wafer processing systemsAPPLIED MATERIALS INC·Filed 1994·Granted Sep 19, 1995·83 cites·31 claims
- 4693US7767561B2Plasma immersion ion implantation reactor having an ion shower gridAPPLIED MATERIALS INC·Filed 2004·Granted Aug 3, 2010·68 cites·67 claims
- 4793US5753044ARF plasma reactor with hybrid conductor and multi-radius dome ceilingAPPLIED MATERIALS INC·Filed 1995·Granted May 19, 1998·91 cites·121 claims
- 4893US5540824APlasma reactor with multi-section RF coil and isolated conducting lidAPPLIED MATERIALS INC·Filed 1994·Granted Jul 30, 1996·85 cites·31 claims
- 4992US7223676B2Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layerAPPLIED MATERIALS INC·Filed 2004·Granted May 29, 2007·49 cites·64 claims
- 5092US6634313B2High-frequency electrostatically shielded toroidal plasma and radical sourceAPPLIED MATERIALS INC·Filed 2001·Granted Oct 21, 2003·42 cites·19 claims
Showing the top 50 of 142 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →