Inventor · disambiguated record
John Hautala
Also filed as: HAUTALA JOHN · HAUTALA JOHN J
99 granted patents·20 pending applications·1,837 citations·filing 1999–2025
99Inventor score
Files withVARIAN SEMICONDUCTOR EQUIPMENT ASS INC37TEL EPION INC28APPLIED MATERIALS INC19HAUTALA JOHN J10TOKYO ELECTRON LTD8
Top patents by PatentIndex Score
119 records- 0198US7794798B2Method for depositing films using gas cluster ion beam processingTEL EPION INC·Filed 2007·Granted Sep 14, 2010·52 cites·53 claims
- 0298US7060989B2Method and apparatus for improved processing with a gas-cluster ion beamEPION CORP·Filed 2005·Granted Jun 13, 2006·90 cites·23 claims
- 0397US11908691B2Techniques to engineer nanoscale patterned features using ionsVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2022·Granted Feb 20, 2024·3 cites·7 claims
- 0497US11488823B2Techniques to engineer nanoscale patterned features using ionsVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2021·Granted Nov 1, 2022·4 cites·19 claims
- 0597US7259036B2Methods of forming doped and un-doped strained semiconductor materials and semiconductor films by gas-cluster-ion-beam irradiation and materials and film productsTEL EPION INC·Filed 2005·Granted Aug 21, 2007·131 cites·40 claims
- 0697US6410433B1Thermal CVD of TaN films from tantalum halide precursorsTOKYO ELECTRON LTD·Filed 1999·Granted Jun 25, 2002·374 cites·18 claims
- 0797US6265311B1PECVD of TaN films from tantalum halide precursorsTOKYO ELECTRON LTD·Filed 1999·Granted Jul 24, 2001·419 cites·21 claims
- 0896US11043394B1Techniques and apparatus for selective shaping of mask features using angled beamsAPPLIED MATERIALS INC·Filed 2019·Granted Jun 22, 2021·13 cites·16 claims
- 0995US11569095B2Techniques and apparatus for selective shaping of mask features using angled beamsAPPLIED MATERIALS INC·Filed 2021·Granted Jan 31, 2023·2 cites·9 claims
- 1095US8237136B2Method and system for tilting a substrate during gas cluster ion beam processingHAUTALA JOHN J·Filed 2009·Granted Aug 7, 2012·35 cites·13 claims
- 1195US8187971B2Method to alter silicide properties using GCIB treatmentRUSSELL NOEL·Filed 2010·Granted May 29, 2012·28 cites·21 claims
- 1295US7947582B2Material infusion in a trap layer structure using gas cluster ion beam processingTEL EPION INC·Filed 2009·Granted May 24, 2011·36 cites·22 claims
- 1394US11043380B2Techniques to engineer nanoscale patterned features using ionsVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2018·Granted Jun 22, 2021·7 cites·10 claims
- 1494US10403738B1Techniques for improved spacer in nanosheet deviceVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2018·Granted Sep 3, 2019·11 cites·20 claims
- 1594US9984889B2Techniques for manipulating patterned features using ionsVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2016·Granted May 29, 2018·11 cites·17 claims
- 1694US7410890B2Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiationTEL EPION INC·Filed 2005·Granted Aug 12, 2008·28 cites·52 claims
- 1793US11942361B2Semiconductor device cavity formation using directional depositionAPPLIED MATERIALS INC·Filed 2021·Granted Mar 26, 2024·2 cites·15 claims
- 1893US7968422B2Method for forming trench isolation using a gas cluster ion beam growth processTEL EPION INC·Filed 2009·Granted Jun 28, 2011·22 cites·19 claims
- 1992US10008384B2Techniques to engineer nanoscale patterned features using ionsVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2015·Granted Jun 26, 2018·6 cites·16 claims
- 2092US9190498B2Technique for forming a FinFET device using selective ion implantationVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2013·Granted Nov 17, 2015·15 cites·7 claims
- 2192US7115511B2GCIB processing of integrated circuit interconnect structuresEPION CORP·Filed 2003·Granted Oct 3, 2006·54 cites·35 claims
- 2291US6812147B2GCIB processing to improve interconnection vias and improved interconnection viaEPION CORP·Filed 2002·Granted Nov 2, 2004·54 cites·31 claims
- 2390US8592784B2Method for modifying a material layer using gas cluster ion beam processingHAUTALA JOHN J·Filed 2011·Granted Nov 26, 2013·11 cites·19 claims
- 2490US8313663B2Surface profile adjustment using gas cluster ion beam processingHAUTALA JOHN J·Filed 2008·Granted Nov 20, 2012·13 cites·20 claims
- 2590US7291558B2Copper interconnect wiring and method of forming thereofTEL EPION INC·Filed 2005·Granted Nov 6, 2007·17 cites·60 claims
- 2689US10685865B2Method and device for power rail in a fin type field effect transistorVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2018·Granted Jun 16, 2020·5 cites·18 claims
- 2789US9997351B2Apparatus and techniques for filling a cavity using angled ion beamVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2015·Granted Jun 12, 2018·6 cites·14 claims
- 2889US7825389B2Method and apparatus for controlling a gas cluster ion beam formed from a gas mixtureTEL EPION INC·Filed 2007·Granted Nov 2, 2010·15 cites·19 claims
- 2989US6268288B1Plasma treated thermal CVD of TaN films from tantalum halide precursorsTOKYO ELECTRON LTD·Filed 1999·Granted Jul 31, 2001·109 cites·38 claims
- 3088US10310379B2Multiple patterning approach using ion implantationVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2017·Granted Jun 4, 2019·5 cites·18 claims
- 3188US9659784B1Ion-assisted deposition and implantation of photoresist to improve line edge roughnessVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2015·Granted May 23, 2017·5 cites·16 claims
- 3288US7521089B2Method and apparatus for controlling the movement of CVD reaction byproduct gases to adjacent process chambersTOKYO ELECTRON LTD·Filed 2002·Granted Apr 21, 2009·48 cites·10 claims
- 3387US11749564B2Techniques for void-free material depositionsAPPLIED MATERIALS INC·Filed 2020·Granted Sep 5, 2023·2 cites·16 claims
- 3487US8691700B2Gas cluster ion beam etch profile control using beam divergenceHAUTALA JOHN J·Filed 2011·Granted Apr 8, 2014·8 cites·18 claims
- 3586US8372489B2Method for directional deposition using a gas cluster ion beamTEL EPION INC·Filed 2007·Granted Feb 12, 2013·9 cites·20 claims
- 3686US8048788B2Method for treating non-planar structures using gas cluster ion beam processingTEL EPION INC·Filed 2009·Granted Nov 1, 2011·10 cites·19 claims
- 3786US7799683B2Copper interconnect wiring and method and apparatus for forming thereofTEL EPION INC·Filed 2007·Granted Sep 21, 2010·9 cites·24 claims
- 3886US7396745B2Formation of ultra-shallow junctions by gas-cluster ion irradiationTEL EPION INC·Filed 2005·Granted Jul 8, 2008·12 cites·35 claims
- 3985US10665433B2Extreme edge uniformity controlVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2016·Granted May 26, 2020·3 cites·16 claims
- 4085US7905199B2Method and system for directional growth using a gas cluster ion beamTEL EPION INC·Filed 2008·Granted Mar 15, 2011·8 cites·19 claims
- 4184US10971368B2Techniques for processing substrates using directional reactive ion etchingVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2018·Granted Apr 6, 2021·3 cites·13 claims
- 4284US9287123B2Techniques for forming angled structures for reduced defects in heteroepitaxy of semiconductor filmsVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2014·Granted Mar 15, 2016·4 cites·20 claims
- 4383US7982196B2Method for modifying a material layer using gas cluster ion beam processingTEL EPION INC·Filed 2009·Granted Jul 19, 2011·6 cites·20 claims
- 4483US7759251B2Dual damascene integration structure and method for forming improved dual damascene integration structureTEL EPION CORP·Filed 2005·Granted Jul 20, 2010·11 cites·37 claims
- 4582US12417923B2Techniques and apparatus for selective shaping of mask features using angled beamsAPPLIED MATERIALS INC·Filed 2022·Granted Sep 16, 2025·0 cites·14 claims
- 4682US10109498B2Composite patterning mask using angled ion beam depositionVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2016·Granted Oct 23, 2018·3 cites·19 claims
- 4780US10381232B2Techniques for manipulating patterned features using ionsVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2018·Granted Aug 13, 2019·2 cites·17 claims
- 4880US8192805B2Method to improve electrical leakage performance and to minimize electromigration in semiconductor devicesRUSSELL NOEL·Filed 2008·Granted Jun 5, 2012·7 cites·10 claims
- 4980US7838423B2Method of forming capping structures on one or more material layer surfacesTEL EPION INC·Filed 2009·Granted Nov 23, 2010·5 cites·32 claims
- 5080US7754588B2Method to improve a copper/dielectric interface in semiconductor devicesTEL EPION INC·Filed 2007·Granted Jul 13, 2010·7 cites·7 claims
Showing the top 50 of 119 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →