Inventor · disambiguated record
Juergen Faul
Also filed as: FAUL JUERGEN
29 granted patents·10 pending applications·164 citations·filing 1996–2022
95Inventor score
Top patents by PatentIndex Score
39 records- 0192US9837439B1Compensation of temperature effects in semiconductor device structuresGLOBALFOUNDRIES INC·Filed 2016·Granted Dec 5, 2017·8 cites·18 claims
- 0292US9023715B2Methods of forming bulk FinFET devices so as to reduce punch through leakage currentsFAUL JUERGEN·Filed 2012·Granted May 5, 2015·28 cites·19 claims
- 0390US9299616B1Integrated circuits with separate workfunction material layers and methods for fabricating the sameGLOBALFOUNDRIES INC·Filed 2014·Granted Mar 29, 2016·10 cites·20 claims
- 0486US9905707B1MOS capacitive structure of reduced capacitance variabilityGLOBALFOUNDRIES INC·Filed 2016·Granted Feb 27, 2018·6 cites·19 claims
- 0586US5858866AGeometrical control of device corner thresholdIBM·Filed 1996·Granted Jan 12, 1999·54 cites·3 claims
- 0684US8823149B2Contact landing pads for a semiconductor device and methods of making sameGLOBALFOUNDRIES INC·Filed 2012·Granted Sep 2, 2014·6 cites·11 claims
- 0777US10026753B2Method for compensating for temperature effects in semiconductor device structures using a diode structure and a tunable resistorGLOBALFOUNDRIES INC·Filed 2017·Granted Jul 17, 2018·2 cites·20 claims
- 0876US7700983B2Transistor, memory cell, memory cell array and method of forming a memory cell arrayQIMONDA AG·Filed 2005·Granted Apr 20, 2010·7 cites·25 claims
- 0975US7915713B2Field effect transistors with channels oriented to different crystal planesQIMONDA AG·Filed 2008·Granted Mar 29, 2011·6 cites·15 claims
- 1074US8956928B2Contact structure for a semiconductor device and methods of making sameGLOBALFOUNDRIES INC·Filed 2012·Granted Feb 17, 2015·3 cites·26 claims
- 1173US10032891B2FinFET based flash memory cellGLOBALFOUNDRIES INC·Filed 2017·Granted Jul 24, 2018·1 cites·20 claims
- 1270US9666589B1FinFET based flash memory cellGLOBALFOUNDRIES INC·Filed 2016·Granted May 30, 2017·1 cites·11 claims
- 1367US9177803B2HK/MG process flows for P-type semiconductor devicesGLOBALFOUNDRIES INC·Filed 2014·Granted Nov 3, 2015·1 cites·5 claims
- 1466US9748270B2Tunable capacitor for FDSOI applicationsGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 29, 2017·1 cites·17 claims
- 1566US5998852AGeometrical control of device corner thresholdIBM·Filed 1998·Granted Dec 7, 1999·20 cites·12 claims
- 1665US9064733B2Contact structure for a semiconductor device and methods of making sameGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 23, 2015·1 cites·24 claims
- 1763US11887852B2Lateral transistor with self-aligned body implantINFINEON TECH DRESDEN GMBH & CO KG·Filed 2021·Granted Jan 30, 2024·0 cites·12 claims
- 1861US8962414B1Reduced spacer thickness in semiconductor device fabricationGLOBALFOUNDRIES INC·Filed 2013·Granted Feb 24, 2015·1 cites·14 claims
- 1957US10466126B2MEMS capacitive pressure sensors in fully depleted semiconductor on insulator (FDSOI)GLOBALFOUNDRIES INC·Filed 2018·Granted Nov 5, 2019·0 cites·10 claims
- 2056US8951920B2Contact landing pads for a semiconductor device and methods of making sameGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 10, 2015·0 cites·11 claims
- 2154US12176339B2Electronic device and charge pump circuitINFINEON TECHNOLOGIES AG·Filed 2022·Granted Dec 24, 2024·0 cites·14 claims
- 2253US10224342B2Tunable capacitor for FDSOI applicationsGLOBALFOUNDRIES INC·Filed 2017·Granted Mar 5, 2019·0 cites·17 claims
- 2352US10535674B2Method of forming a semiconductor device structure and semiconductor device structureGLOBALFOUNDRIES INC·Filed 2017·Granted Jan 14, 2020·0 cites·17 claims
- 2451US9748259B1Method of forming a semiconductor device structure and semiconductor device structureGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 29, 2017·0 cites·19 claims
- 2547US2016005734A1Integrated circuit product comprised of multiple p-type semiconductor devices with different threshold voltagesGLOBALFOUNDRIES INC·Filed 2015·Application pending·0 cites
- 2646US6022796AGeometrical control of device corner thresholdIBM·Filed 1998·Granted Feb 8, 2000·8 cites·4 claims
- 2744US2015214116A1Low leakage pmos transistorGLOBALFOUNDRIES INC·Filed 2014·Application pending·0 cites
- 2843US9093526B2Methods of forming a sidewall spacer having a generally triangular shape and a semiconductor device having such a spacerGLOBALFOUNDRIES INC·Filed 2012·Granted Jul 28, 2015·0 cites·10 claims
- 2941US2008308870A1Integrated circuit with a split function gateQIMONDA AG·Filed 2007·Application pending·0 cites
- 3040US2006228876A1Method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2005·Application pending·0 cites
- 3140US2008099852A1Integrated semiconductor device and method of manufacturing an integrated semiconductor deviceFAUL JUERGEN·Filed 2006·Application pending·0 cites
- 3239US8614134B2Shallow source and drain architecture in an active region of a semiconductor device having a pronounced surface topography by tilted implantationGERHARDT MARTIN·Filed 2011·Granted Dec 24, 2013·0 cites·20 claims
- 3337US2018175209A1Semiconductor structure including one or more nonvolatile memory cells and method for the formation thereofGLOBALFOUNDRIES INC·Filed 2016·Application pending·0 cites
- 3436US9876111B2Method of forming a semiconductor device structure using differing spacer widths and the resulting semiconductor device structureGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 23, 2018·0 cites·9 claims
- 3535US2017162557A1Trench based charge pump deviceGLOBALFOUNDRIES INC·Filed 2015·Application pending·0 cites
- 3635US2017338343A1High-voltage transistor deviceGLOBALFOUNDRIES INC·Filed 2016·Application pending·0 cites
- 3734US9917087B2Integrated circuits with a partially-depleted region formed over a bulk silicon substrate and methods for fabricating the sameGLOBALFOUNDRIES INC·Filed 2013·Granted Mar 13, 2018·0 cites·10 claims
- 3834US2016276428A1High-voltage transistor deviceGLOBALFOUNDRIES INC·Filed 2015·Application pending·0 cites
- 3932US2007148893A1Method of forming a doped semiconductor portionJOSIEK ANDREI·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →