Inventor · disambiguated record
Lawrence Schloss
Also filed as: SCHLOSS LAWRENCE · SCHLOSS LAWRENCE FREDERICK
38 granted patents·14 pending applications·467 citations·filing 2005–2025
98Inventor score
Files withUNITY SEMICONDUCTOR CORP18LAM RES CORP17SCHLOSS LAWRENCE6HEFEI RELIANCE MEMORY LTD4RINERSON DARRELL3
Top patents by PatentIndex Score
52 records- 0198US8848425B2Conductive metal oxide structures in non volatile re-writable memory devicesUNITY SEMICONDUCTOR CORP·Filed 2013·Granted Sep 30, 2014·59 cites·20 claims
- 0298US8045364B2Non-volatile memory device ion barrierUNITY SEMICONDUCTOR CORP·Filed 2009·Granted Oct 25, 2011·121 cites·32 claims
- 0397US10573522B2Method for preventing line bending during metal fill processLAM RES CORP·Filed 2017·Granted Feb 25, 2020·38 cites·20 claims
- 0497US9613818B2Deposition of low fluorine tungsten by sequential CVD processLAM RES CORP·Filed 2015·Granted Apr 4, 2017·33 cites·12 claims
- 0596US11355345B2Method for preventing line bending during metal fill processLAM RES CORP·Filed 2019·Granted Jun 7, 2022·21 cites·14 claims
- 0696US9978605B2Method of forming low resistivity fluorine free tungsten film without nucleationLAM RES CORP·Filed 2017·Granted May 22, 2018·23 cites·23 claims
- 0795US12362188B2Method for preventing line bending during metal fill processLAM RES CORP·Filed 2022·Granted Jul 15, 2025·2 cites·14 claims
- 0895US8003511B2Memory cell formation using ion implant isolated conductive metal oxideUNITY SEMICONDUCTOR CORP·Filed 2009·Granted Aug 23, 2011·26 cites·43 claims
- 0994US9754824B2Tungsten films having low fluorine contentLAM RES CORP·Filed 2015·Granted Sep 5, 2017·15 cites·20 claims
- 1093US7995371B2Threshold device for a memory arrayUNITY SEMICONDUCTOR CORP·Filed 2007·Granted Aug 9, 2011·30 cites·39 claims
- 1192US12327762B2Molybdenum fillLAM RES CORP·Filed 2020·Granted Jun 10, 2025·3 cites·25 claims
- 1292US10546751B2Forming low resistivity fluorine free tungsten film without nucleationLAM RES CORP·Filed 2018·Granted Jan 28, 2020·8 cites·19 claims
- 1391US11348795B2Metal fill process for three-dimensional vertical NAND wordlineLAM RES CORP·Filed 2018·Granted May 31, 2022·7 cites·20 claims
- 1491US8027215B2Array operation using a schottky diode as a non-ohmic isolation deviceUNITY SEMICONDUCTOR CORP·Filed 2009·Granted Sep 27, 2011·18 cites·27 claims
- 1590US9159913B2Two-terminal reversibly switchable memory deviceUNITY SEMICONDUCTOR CORP·Filed 2014·Granted Oct 13, 2015·6 cites·20 claims
- 1689US10224480B2Two-terminal reversibly switchable memory deviceHEFEI RELIANCE MEMORY LTD·Filed 2017·Granted Mar 5, 2019·4 cites·18 claims
- 1788US8031510B2Ion barrier capUNITY SEMICONDUCTOR CORP·Filed 2010·Granted Oct 4, 2011·9 cites·17 claims
- 1887US8031509B2Conductive metal oxide structures in non-volatile re-writable memory devicesUNITY SEMICONDUCTOR CORP·Filed 2009·Granted Oct 4, 2011·13 cites·50 claims
- 1986US2025323045A1Method for preventing line bending during metal fill processLAM RES CORP·Filed 2025·Application pending·0 cites
- 2079US9293635B2Back junction back contact solar cell module and method of manufacturing the sameREC SOLAR PTE LTD·Filed 2012·Granted Mar 22, 2016·3 cites·22 claims
- 2177US12014928B2Multi-layer feature fillLAM RES CORP·Filed 2019·Granted Jun 18, 2024·2 cites·17 claims
- 2275US11672189B2Two-terminal reversibly switchable memory deviceHEFEI RELIANCE MEMORY LTD·Filed 2021·Granted Jun 6, 2023·0 cites·20 claims
- 2375US8254196B2Array operation using a schottky diode as a non ohmic selection deviceLAMBERTSON ROY·Filed 2011·Granted Aug 28, 2012·4 cites·40 claims
- 2472US11063214B2Two-terminal reversibly switchable memory deviceHEFEI RELIANCE MEMORY LTD·Filed 2020·Granted Jul 13, 2021·0 cites·20 claims
- 2572US8274817B2Non volatile memory device ion barrierSCHLOSS LAWRENCE·Filed 2011·Granted Sep 25, 2012·3 cites·30 claims
- 2672US2024282580A1Multi-layer feature fillLAM RES CORP·Filed 2024·Application pending·0 cites
- 2771US10680171B2Two-terminal reversibly switchable memory deviceHEFEI RELIANCE MEMORY LTD·Filed 2019·Granted Jun 9, 2020·0 cites·20 claims
- 2871US8565039B2Array operation using a schottky diode as a non-ohmic selection deviceLAMBERTSON ROY·Filed 2012·Granted Oct 22, 2013·3 cites·40 claims
- 2971US8320161B2Conductive metal oxide structures in non volatile re writable memory devicesSCHLOSS LAWRENCE·Filed 2011·Granted Nov 27, 2012·3 cites·22 claims
- 3070US9831425B2Two-terminal reversibly switchable memory deviceUNITY SEMICONDUCTOR CORP·Filed 2015·Granted Nov 28, 2017·1 cites·20 claims
- 3169US8208284B2Data retention structure for non-volatile memorySCHLOSS LAWRENCE·Filed 2008·Granted Jun 26, 2012·6 cites·14 claims
- 3269US2021098063A1Conductive metal oxide structures in non-volatile re-writable memory devicesUNITY SEMICONDUCTOR CORP·Filed 2020·Application pending·0 cites
- 3369US2025285920A1Molybdenum fillLAM RES CORP·Filed 2025·Application pending·0 cites
- 3467US9767897B2Conductive metal oxide structures in non-volatile re-writable memory devicesUNITY SEMICONDUCTOR CORP·Filed 2016·Granted Sep 19, 2017·1 cites·20 claims
- 3566US8565006B2Conductive metal oxide structures in non volatile re writable memory devicesSCHLOSS LAWRENCE·Filed 2012·Granted Oct 22, 2013·2 cites·16 claims
- 3666US8268667B2Memory device using ion implant isolated conductive metal oxideRINERSON DARRELL·Filed 2011·Granted Sep 18, 2012·1 cites·25 claims
- 3765US9293702B2Conductive metal oxide structures in non-volatile re-writable memory devicesUNITY SEMICONDUCTOR CORP·Filed 2014·Granted Mar 22, 2016·1 cites·20 claims
- 3859US10803935B2Conductive metal oxide structures in non-volatile re-writable memory devicesUNITY SEMICONDUCTOR CORP·Filed 2019·Granted Oct 13, 2020·0 cites·20 claims
- 3959US8358529B2Conductive metal oxide structures in non-volatile re-writable memory devicesUNITY SEMICONDUCTOR CORP·Filed 2011·Granted Jan 22, 2013·1 cites·30 claims
- 4055US10311950B2Conductive metal oxide structures in non-volatile re-writable memory devicesUNITY SEMICONDUCTOR CORP·Filed 2017·Granted Jun 4, 2019·0 cites·20 claims
- 4155US2025022751A1Gradient liner in metal fillLAM RES CORP·Filed 2022·Application pending·0 cites
- 4251US2025287675A1Molybdenum halides in memory applicationsLAM RES CORP·Filed 2023·Application pending·0 cites
- 4349US2011315943A1Memory Device Using A Dual Layer Conductive Metal Oxide StructureRINERSON DARRELL·Filed 2011·Application pending·0 cites
- 4449US2012087174A1Two Terminal Re Writeable Non Volatile Ion Transport Memory DeviceRINERSON DARRELL·Filed 2011·Application pending·0 cites
- 4547US2024249949A1Tungsten wordline fill in high aspect ratio 3d nand architectureLAM RES CORP·Filed 2022·Application pending·0 cites
- 4647US2014014893A1Array operation using a schottky diode as a non-ohmic selection deviceUNITY SEMICONDUCTOR CORP·Filed 2013·Application pending·0 cites
- 4747US2009303772A1Two-Terminal Reversibly Switchable Memory DeviceUNITY SEMICONDUCTOR CORP·Filed 2009·Application pending·0 cites
- 4846US8493771B2Non-volatile memory device ion barrierSCHLOSS LAWRENCE·Filed 2012·Granted Jul 23, 2013·0 cites·32 claims
- 4946US2023290639A1Low resistance gate oxide metallization linerLAM RES CORP·Filed 2020·Application pending·0 cites
- 5043US2006171200A1Memory using mixed valence conductive oxidesUNITY SEMICONDUCTOR CORP·Filed 2005·Application pending·0 cites
Showing the top 50 of 52 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →