Inventor · disambiguated record
Mihaela Balseanu
Also filed as: BALSEANU MIHAELA · BALSEANU MIHAELA A
72 granted patents·28 pending applications·1,409 citations·filing 2003–2025
99Inventor score
Files withAPPLIED MATERIALS INC72BALSEANU MIHAELA12NGUYEN VICTOR6ASM IP HOLDING BV2CORNELL RES FOUNDATION INC2
Top patents by PatentIndex Score
100 records- 0198US8138104B2Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cureBALSEANU MIHAELA·Filed 2007·Granted Mar 20, 2012·479 cites·18 claims
- 0298US8129290B2Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cureBALSEANU MIHAELA·Filed 2006·Granted Mar 6, 2012·492 cites·16 claims
- 0397US7871926B2Methods and systems for forming at least one dielectric layerAPPLIED MATERIALS INC·Filed 2007·Granted Jan 18, 2011·77 cites·17 claims
- 0496US11930637B2Confined charge trap layerAPPLIED MATERIALS INC·Filed 2021·Granted Mar 12, 2024·3 cites·15 claims
- 0596US11447865B2Deposition of low-κ filmsAPPLIED MATERIALS INC·Filed 2020·Granted Sep 20, 2022·4 cites·20 claims
- 0696US10714331B2Method to fabricate thermally stable low K-FinFET spacerAPPLIED MATERIALS INC·Filed 2019·Granted Jul 14, 2020·15 cites·20 claims
- 0796US10629484B1Method of forming self-aligned viaAPPLIED MATERIALS INC·Filed 2018·Granted Apr 21, 2020·12 cites·16 claims
- 0896US7879683B2Methods and apparatus of creating airgap in dielectric layers for the reduction of RC delayAPPLIED MATERIALS INC·Filed 2007·Granted Feb 1, 2011·35 cites·17 claims
- 0995US7910491B2Gapfill improvement with low etch rate dielectric linersAPPLIED MATERIALS INC·Filed 2009·Granted Mar 22, 2011·90 cites·24 claims
- 1092US10319583B2Selective deposition of silicon nitride films for spacer applicationsAPPLIED MATERIALS INC·Filed 2017·Granted Jun 11, 2019·7 cites·18 claims
- 1192US8148269B2Boron nitride and boron-nitride derived materials deposition methodBALSEANU MIHAELA·Filed 2009·Granted Apr 3, 2012·22 cites·5 claims
- 1291US10023958B2Atomic layer deposition of films comprising silicon, carbon and nitrogen using halogenated silicon precursorsAPPLIED MATERIALS INC·Filed 2014·Granted Jul 17, 2018·4 cites·6 claims
- 1391US7566655B2Integration process for fabricating stressed transistor structureAPPLIED MATERIALS INC·Filed 2006·Granted Jul 28, 2009·20 cites·12 claims
- 1490US9875888B2High temperature silicon oxide atomic layer deposition technologyAPPLIED MATERIALS INC·Filed 2015·Granted Jan 23, 2018·6 cites·6 claims
- 1590US9564582B2Method of forming magnetic tunneling junctionsAPPLIED MATERIALS INC·Filed 2014·Granted Feb 7, 2017·15 cites·20 claims
- 1687US10134581B2Methods and apparatus for selective dry etchAPPLIED MATERIALS INC·Filed 2017·Granted Nov 20, 2018·4 cites·17 claims
- 1787US8337950B2Method for depositing boron-rich films for lithographic mask applicationsNGUYEN VICTOR·Filed 2010·Granted Dec 25, 2012·9 cites·17 claims
- 1887US7780865B2Method to improve the step coverage and pattern loading for dielectric filmsAPPLIED MATERIALS INC·Filed 2007·Granted Aug 24, 2010·12 cites·19 claims
- 1986US8084105B2Method of depositing boron nitride and boron nitride-derived materialsHUH JEONG-UK·Filed 2007·Granted Dec 27, 2011·8 cites·17 claims
- 2085US8586487B2Low temperature plasma enhanced chemical vapor deposition of conformal silicon carbon nitride and silicon nitride filmsNGUYEN VICTOR·Filed 2012·Granted Nov 19, 2013·7 cites·20 claims
- 2184US8753989B2Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cureBALSEANU MIHAELA·Filed 2012·Granted Jun 17, 2014·5 cites·14 claims
- 2283US7790635B2Method to increase the compressive stress of PECVD dielectric filmsAPPLIED MATERIALS INC·Filed 2006·Granted Sep 7, 2010·8 cites·24 claims
- 2383US7732342B2Method to increase the compressive stress of PECVD silicon nitride filmsAPPLIED MATERIALS INC·Filed 2006·Granted Jun 8, 2010·10 cites·13 claims
- 2483US7704816B2Boron derived materials deposition methodAPPLIED MATERIALS INC·Filed 2008·Granted Apr 27, 2010·8 cites·12 claims
- 2581US10923396B2Method of forming self-aligned viaAPPLIED MATERIALS INC·Filed 2020·Granted Feb 16, 2021·1 cites·7 claims
- 2681US7816205B2Method of forming non-volatile memory having charge trap layer with compositional gradientAPPLIED MATERIALS INC·Filed 2008·Granted Oct 19, 2010·5 cites·21 claims
- 2780US9297073B2Accurate film thickness control in gap-fill technologyAPPLIED MATERIALS INC·Filed 2015·Granted Mar 29, 2016·3 cites·20 claims
- 2879US2025239445A1Method and apparatus for selective deposition of dielectric filmsAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 2978US8492880B2Multilayered low k cap with conformal gap fill and UV stable compressive stress propertiesBALSEANU MIHAELA·Filed 2011·Granted Jul 23, 2013·3 cites·13 claims
- 3076US7601651B2Method to improve the step coverage and pattern loading for dielectric filmsAPPLIED MATERIALS INC·Filed 2007·Granted Oct 13, 2009·4 cites·17 claims
- 3175US11970777B2Deposition of low-k filmsAPPLIED MATERIALS INC·Filed 2022·Granted Apr 30, 2024·0 cites·20 claims
- 3274US11887847B2Methods and precursors for selective deposition of metal filmsAPPLIED MATERIALS INC·Filed 2022·Granted Jan 30, 2024·0 cites·20 claims
- 3374US11133178B2Seamless gapfill with dielectric ALD filmsAPPLIED MATERIALS INC·Filed 2019·Granted Sep 28, 2021·1 cites·20 claims
- 3474US11028478B2Atomic layer deposition of films comprising silicon, carbon and nitrogen using halogenated silicon precursorsAPPLIED MATERIALS INC·Filed 2018·Granted Jun 8, 2021·0 cites·7 claims
- 3574US9984868B2PEALD of films comprising silicon nitrideNGUYEN VICTOR·Filed 2014·Granted May 29, 2018·3 cites·11 claims
- 3674US7923386B2Method to improve the step coverage and pattern loading for dielectric filmsAPPLIED MATERIALS INC·Filed 2009·Granted Apr 12, 2011·3 cites·15 claims
- 3774US2025293086A1Methods and apparatus for selective etch stop capping and selective via open for fully landed via on underlying metalAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 3873US11515151B2Methods and precursors for selective deposition of metal filmsAPPLIED MATERIALS INC·Filed 2018·Granted Nov 29, 2022·1 cites·20 claims
- 3973US10170298B2High temperature silicon oxide atomic layer deposition technologyAPPLIED MATERIALS INC·Filed 2017·Granted Jan 1, 2019·1 cites·16 claims
- 4073US9633861B2Cu/barrier interface enhancementAPPLIED MATERIALS INC·Filed 2014·Granted Apr 25, 2017·3 cites·8 claims
- 4173US8563090B2Boron film interface engineeringBALSEANU MIHAELA·Filed 2009·Granted Oct 22, 2013·5 cites·11 claims
- 4273US8536069B2Multilayered low k cap with conformal gap fill and UV stable compressive stress propertiesBALSEANU MIHAELA·Filed 2012·Granted Sep 17, 2013·2 cites·20 claims
- 4373US2023096772A1Apparatus and methods to reduce particles in a film deposition chamberAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 4473US2025037989A1Sequential plasma and thermal treatmentAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 4572US11887818B2Methods and systems to modulate film stressAPPLIED MATERIALS INC·Filed 2021·Granted Jan 30, 2024·0 cites·9 claims
- 4671US8252653B2Method of forming a non-volatile memory having a silicon nitride charge trap layerBALSEANU MIHAELA·Filed 2008·Granted Aug 28, 2012·2 cites·23 claims
- 4770US12334394B2Methods and apparatus for selective etch stop capping and selective via open for fully landed via on underlying metalAPPLIED MATERIALS INC·Filed 2022·Granted Jun 17, 2025·0 cites·20 claims
- 4870US11713507B2Low-k filmsAPPLIED MATERIALS INC·Filed 2022·Granted Aug 1, 2023·0 cites·7 claims
- 4969US12142475B2Sequential plasma and thermal treatmentAPPLIED MATERIALS INC·Filed 2022·Granted Nov 12, 2024·0 cites·19 claims
- 5069US11270914B2Method of forming self-aligned viaAPPLIED MATERIALS INC·Filed 2021·Granted Mar 8, 2022·0 cites·9 claims
Showing the top 50 of 100 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →