Inventor · disambiguated record
Ming-Chou Ho
Also filed as: HO MING-CHOU
21 granted patents·7 pending applications·563 citations·filing 1997–2009
96Inventor score
Top patents by PatentIndex Score
28 records- 0192US6920067B2Integrated circuit embedded with single-poly non-volatile memoryEMEMORY TECHNOLOGY INC·Filed 2002·Granted Jul 19, 2005·69 cites·18 claims
- 0290US6617637B1Electrically erasable programmable logic deviceEMEMORY TECHNOLOGY INC·Filed 2002·Granted Sep 9, 2003·57 cites·33 claims
- 0388US7447082B2Method for operating single-poly non-volatile memory deviceEMEMORY TECHNOLOGY INC·Filed 2006·Granted Nov 4, 2008·10 cites·8 claims
- 0483US6055183AErase method of flash EEPROM by using snapback characteristicTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Apr 25, 2000·54 cites·16 claims
- 0582US5862078AMixed mode erase method to improve flash eeprom write/erase threshold closureTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Jan 19, 1999·56 cites·22 claims
- 0681US6914825B2Semiconductor memory device having improved data retentionEMEMORY TECHNOLOGY INC·Filed 2003·Granted Jul 5, 2005·30 cites·4 claims
- 0779US6049484AErase method to improve flash EEPROM endurance by combining high voltage source erase and negative gate eraseTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Apr 11, 2000·43 cites·20 claims
- 0879US5726933AClipped sine shaped waveform to reduce the cycling-induced electron trapping in the tunneling oxide of flash EEPROMTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Mar 10, 1998·43 cites·10 claims
- 0977US6822286B2Cmos-compatible read only memory and method for fabricating the sameEMEMORY TECHNOLOGY INC·Filed 2003·Granted Nov 23, 2004·18 cites·14 claims
- 1077US6812083B2Fabrication method for non-volatile memoryEMEMORY TECHNOLOGY INC·Filed 2003·Granted Nov 2, 2004·25 cites·7 claims
- 1176US7768059B2Nonvolatile single-poly memory deviceEMEMORY TECHNOLOGY INC·Filed 2007·Granted Aug 3, 2010·5 cites·7 claims
- 1276US5949717AMethod to improve flash EEPROM cell write/erase threshold voltage closureTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Sep 7, 1999·41 cites·24 claims
- 1374US8089798B2Method for operating one-time programmable read-only memoryLAI TSUNG-MU·Filed 2009·Granted Jan 3, 2012·5 cites·4 claims
- 1467US6842374B2Method for operating N-channel electrically erasable programmable logic deviceEMEMORY TECHNOLOGY INC·Filed 2003·Granted Jan 11, 2005·13 cites·14 claims
- 1567US6417046B1Modified nitride spacer for solving charge retention issue in floating gate memory cellTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jul 9, 2002·12 cites·24 claims
- 1666US6303454B1Process for a snap-back flash EEPROM cellTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Oct 16, 2001·14 cites·14 claims
- 1763US5838618ABi-modal erase method for eliminating cycling-induced flash EEPROM cell write/erase threshold closureTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Nov 17, 1998·23 cites·32 claims
- 1862US5903499AMethod to erase a flash EEPROM using negative gate source erase followed by a high negative gate eraseTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted May 11, 1999·21 cites·24 claims
- 1961US7433243B2Operation method of non-volatile memoryEMEMORY TECHNOLOGY INC·Filed 2006·Granted Oct 7, 2008·1 cites·33 claims
- 2056US6117732AUse of a metal contact structure to increase control gate coupling capacitance for a single polysilicon non-volatile memory cellTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Sep 12, 2000·17 cites·19 claims
- 2153US2008138956A1Manufacturing method of semiconductor deviceEMEMORY TECHNOLOGY INC·Filed 2007·Application pending·0 cites
- 2251US6740556B1Method for forming EPROM with low leakageEMEMORY TECHNOLOGY INC·Filed 2003·Granted May 25, 2004·6 cites·12 claims
- 2351US2007108470A1Semiconductor device and manufacturing method thereofEMEMORY TECHNOLOGY INC·Filed 2006·Application pending·0 cites
- 2451US2008296701A1One-time programmable read-only memoryEMEMORY TECHNOLOGY INC·Filed 2007·Application pending·0 cites
- 2551US2007111357A1Manufacturing method of a non-volatile memoryEMEMORY TECHNOLOGY INC·Filed 2006·Application pending·0 cites
- 2645US2010006924A1One-time programmable read-only memoryEMEMORY TECHNOLOGY INC·Filed 2008·Application pending·0 cites
- 2739US2007296034A1Silicon-on-insulator (soi) memory deviceCHEN HSIN-MING·Filed 2007·Application pending·0 cites
- 2837US2002142535A1Modified nitride spacer for solving charge retention issue in floating gate memory cellTAIWAN SEMICONDUCTOR MFG·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →