Inventor · disambiguated record
Noel Russell
Also filed as: RUSSELL NOEL · RUSSELL NOEL M
39 granted patents·10 pending applications·328 citations·filing 1998–2018
97Inventor score
Top patents by PatentIndex Score
49 records- 0195US8237136B2Method and system for tilting a substrate during gas cluster ion beam processingHAUTALA JOHN J·Filed 2009·Granted Aug 7, 2012·35 cites·13 claims
- 0295US8187971B2Method to alter silicide properties using GCIB treatmentRUSSELL NOEL·Filed 2010·Granted May 29, 2012·28 cites·21 claims
- 0386US8048788B2Method for treating non-planar structures using gas cluster ion beam processingTEL EPION INC·Filed 2009·Granted Nov 1, 2011·10 cites·19 claims
- 0484US7776743B2Method of forming semiconductor devices containing metal cap layersTEL EPION INC·Filed 2008·Granted Aug 17, 2010·9 cites·23 claims
- 0584US6864108B1Measurement of wafer temperature in semiconductor processing chambersTEXAS INSTRUMENTS INC·Filed 2003·Granted Mar 8, 2005·29 cites·22 claims
- 0684US6693357B1Methods and semiconductor devices with wiring layer fill structures to improve planarization uniformityTEXAS INSTRUMENTS INC·Filed 2003·Granted Feb 17, 2004·38 cites·63 claims
- 0780US8192805B2Method to improve electrical leakage performance and to minimize electromigration in semiconductor devicesRUSSELL NOEL·Filed 2008·Granted Jun 5, 2012·7 cites·10 claims
- 0880US7754588B2Method to improve a copper/dielectric interface in semiconductor devicesTEL EPION INC·Filed 2007·Granted Jul 13, 2010·7 cites·7 claims
- 0979US7871929B2Method of forming semiconductor devices containing metal cap layersTEL EPION INC·Filed 2009·Granted Jan 18, 2011·6 cites·24 claims
- 1078US7148140B2Partial plate anneal plate process for deposition of conductive fill materialTEXAS INSTRUMENTS INC·Filed 2004·Granted Dec 12, 2006·27 cites·17 claims
- 1176US7981483B2Method to improve electrical leakage performance and to minimize electromigration in semiconductor devicesTEL EPION INC·Filed 2007·Granted Jul 19, 2011·7 cites·8 claims
- 1275US10096527B2Hybrid corrective processing system and methodTEL EPION INC·Filed 2016·Granted Oct 9, 2018·2 cites·20 claims
- 1375US8435890B2Method to alter silicide properties using GCIB treatmentRUSSELL NOEL·Filed 2012·Granted May 7, 2013·2 cites·20 claims
- 1472US7037837B2Method of fabricating robust nucleation/seed layers for subsequent deposition/fill of metallization layersTEXAS INSTRUMENTS INC·Filed 2004·Granted May 2, 2006·13 cites·31 claims
- 1571US5981382APVD deposition process for CVD aluminum liner processingTEXAS INSTRUMENTS INC·Filed 1998·Granted Nov 9, 1999·39 cites·21 claims
- 1669US10109789B2Methods for additive formation of a STT MRAM stackTOKYO ELECTRON LTD·Filed 2016·Granted Oct 23, 2018·2 cites·19 claims
- 1769US8709944B2Method to alter silicide properties using GCIB treatmentTEL EPION INC·Filed 2013·Granted Apr 29, 2014·1 cites·17 claims
- 1869US8703607B2Method to alter silicide properties using GCIB treatmentTEL EPION INC·Filed 2013·Granted Apr 22, 2014·1 cites·7 claims
- 1968US7674707B2Manufacturable reliable diffusion-barrierTEXAS INSTRUMENTS INC·Filed 2007·Granted Mar 9, 2010·2 cites·16 claims
- 2067US9502209B2Multi-step location specific process for substrate edge profile correction for GCIB systemTEL EPION INC·Filed 2015·Granted Nov 22, 2016·1 cites·9 claims
- 2166US9735019B2Process gas enhancement for beam treatment of a substrateTEL EPION INC·Filed 2015·Granted Aug 15, 2017·1 cites·20 claims
- 2264US9875947B2Method of surface profile correction using gas cluster ion beamTEL EPION INC·Filed 2016·Granted Jan 23, 2018·1 cites·20 claims
- 2363US8338806B2Gas cluster ion beam system with rapid gas switching apparatusGRAF MICHAEL·Filed 2010·Granted Dec 25, 2012·2 cites·29 claims
- 2463US8226835B2Ultra-thin film formation using gas cluster ion beam processingHAUTALA JOHN J·Filed 2009·Granted Jul 24, 2012·7 cites·23 claims
- 2561US7803703B2Metal-germanium physical vapor deposition for semiconductor device defect reductionTEXAS INSTRUMENTS INC·Filed 2008·Granted Sep 28, 2010·2 cites·10 claims
- 2661US7256121B2Contact resistance reduction by new barrier stack processTEXAS INSTRUMENTS INC·Filed 2004·Granted Aug 14, 2007·7 cites·21 claims
- 2758US9105443B2Multi-step location specific process for substrate edge profile correction for GCIB systemTEL EPION INC·Filed 2014·Granted Aug 11, 2015·0 cites·11 claims
- 2857US7208398B2Metal-halogen physical vapor deposition for semiconductor device defect reductionTEXAS INSTRUMENTS INC·Filed 2004·Granted Apr 24, 2007·7 cites·20 claims
- 2957US6900127B2Multilayer integrated circuit copper plateable barriersTEXAS INSTRUMENTS INC·Filed 2003·Granted May 31, 2005·5 cites·5 claims
- 3056US6723636B1Methods for forming multiple damascene layersTEXAS INSTRUMENTS INC·Filed 2003·Granted Apr 20, 2004·7 cites·4 claims
- 3156US6720255B1Semiconductor device with silicon-carbon-oxygen dielectric having improved metal barrier adhesion and method of forming the deviceTEXAS INSTRUMENTS INC·Filed 2002·Granted Apr 13, 2004·7 cites·47 claims
- 3254US10971411B2Hybrid corrective processing system and methodTEL EPION INC·Filed 2018·Granted Apr 6, 2021·0 cites·5 claims
- 3350US2011084214A1Gas cluster ion beam processing method for preparing an isolation layer in non-planar gate structuresTEL EPION INC·Filed 2009·Application pending·0 cites
- 3450US2009233004A1Method and system for depositing silicon carbide film using a gas cluster ion beamTEL EPION INC·Filed 2008·Application pending·0 cites
- 3549US10665779B2Methods for additive formation of a STT MRAM stackTOKYO ELECTRON LTD·Filed 2018·Granted May 26, 2020·0 cites·20 claims
- 3649US6291347B1Method and system for constructing semiconductor devicesTEXAS INSTRUMENTS INC·Filed 2000·Granted Sep 18, 2001·2 cites·8 claims
- 3748US9123505B1Apparatus and methods for implementing predicted systematic error correction in location specific processingTEL EPION INC·Filed 2014·Granted Sep 1, 2015·0 cites·20 claims
- 3847US7435672B2Metal-germanium physical vapor deposition for semiconductor device defect reductionTEXAS INSTRUMENTS INC·Filed 2004·Granted Oct 14, 2008·3 cites·16 claims
- 3946US6235631B1Method for forming titanium aluminum nitride layersTEXAS INSTRUMENTS INC·Filed 1998·Granted May 22, 2001·11 cites·8 claims
- 4044US2009087956A1Dummy Contact Fill to Improve Post Contact Chemical Mechanical Polish TopographyTEXAS INSTRUMENTS INC·Filed 2007·Application pending·0 cites
- 4139US10256095B2Method for high throughput using beam scan size and beam position in gas cluster ion beam processing systemTEL EPION INC·Filed 2016·Granted Apr 9, 2019·0 cites·11 claims
- 4239US2005082606A1Low K dielectric integrated circuit interconnect structureFiled 2003·Application pending·0 cites
- 4338US2005082089A1Stacked interconnect structure between copper lines of a semiconductor circuitFiled 2003·Application pending·0 cites
- 4438US2005037613A1Diffusion barrier for copper lines in integrated circuitsFiled 2003·Application pending·0 cites
- 4536US2006024938A1Method for reducing metal silicide excessive encroachment defects in the manufacture of a semiconductor device having silicided source/drain regionsTEXAS INSTRUMENTS INC·Filed 2004·Application pending·0 cites
- 4636US2012064713A1Ultra-low-k dual damascene structure and method of fabricatingRUSSELL NOEL·Filed 2010·Application pending·0 cites
- 4732US2002072227A1Method for improving barrier properties of refractory metals/metal nitrides with a safer alternative to silaneFiled 2001·Application pending·0 cites
- 4832US2006024953A1Dual damascene diffusion barrier/liner process with selective via-to-trench-bottom recessPAPA RAO SATYAVOLU S·Filed 2004·Application pending·0 cites
- 4923US9500946B2Sidewall spacer patterning method using gas cluster ion beamTEL EPION INC·Filed 2015·Granted Nov 22, 2016·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →