Inventor · disambiguated record
Oh-Jung Kwon
Also filed as: KWON OH-JUNG
39 granted patents·12 pending applications·260 citations·filing 1996–2017
97Inventor score
Top patents by PatentIndex Score
51 records- 0194US8354675B2Enhanced capacitance deep trench capacitor for EDRAMIBM·Filed 2010·Granted Jan 15, 2013·20 cites·25 claims
- 0291US7288821B2Structure and method of three dimensional hybrid orientation technologyIBM·Filed 2005·Granted Oct 30, 2007·17 cites·5 claims
- 0391US7030012B2Method for manufacturing tungsten/polysilicon word line structure in vertical DRAMIBM·Filed 2004·Granted Apr 18, 2006·49 cites·20 claims
- 0486US7153737B2Self-aligned, silicided, trench-based, DRAM/EDRAM processes with improved retentionIBM·Filed 2005·Granted Dec 26, 2006·11 cites·2 claims
- 0585US6884715B1Method for forming a self-aligned contact with a silicide or damascene conductor and the structure formed therebyIBM·Filed 2004·Granted Apr 26, 2005·40 cites·19 claims
- 0684US7122439B2Method of fabricating a bottle trench and a bottle trench capacitorINFINEON TECHNOLOGIES AG·Filed 2004·Granted Oct 17, 2006·26 cites·16 claims
- 0783US10170304B1Self-aligned nanotube structuresGLOBALFOUNDRIES INC·Filed 2017·Granted Jan 1, 2019·3 cites·20 claims
- 0883US8633520B2Semiconductor deviceYU DONG-HEE·Filed 2010·Granted Jan 21, 2014·9 cites·20 claims
- 0983US8377790B2Method of fabricating an embedded polysilicon resistor and an embedded eFuse isolated from a substrateIBM·Filed 2011·Granted Feb 19, 2013·7 cites·22 claims
- 1081US8901706B2Thermally stable high-K tetragonal HFO2 layer within high aspect ratio deep trenchesCHUDZIK MICHAEL P·Filed 2012·Granted Dec 2, 2014·4 cites·14 claims
- 1180US8652925B2Method of fabricating isolated capacitors and structure thereofKWON OH-JUNG·Filed 2010·Granted Feb 18, 2014·4 cites·19 claims
- 1280US8293625B2Structure and method for hard mask removal on an SOI substrate without using CMP processKWON OH-JUNG·Filed 2011·Granted Oct 23, 2012·4 cites·20 claims
- 1379US7521763B2Dual stress STIIBM·Filed 2007·Granted Apr 21, 2009·14 cites·15 claims
- 1478US8716776B2Method of fabricating isolated capacitors and structure thereofKWON OH-JUNG·Filed 2012·Granted May 6, 2014·3 cites·5 claims
- 1578US7737468B2Semiconductor devices having recesses filled with semiconductor materialsINFINEON TECHNOLOGIES AG·Filed 2007·Granted Jun 15, 2010·6 cites·9 claims
- 1675US8021982B2Method of silicide formation by adding graded amount of impurity during metal depositionIBM·Filed 2009·Granted Sep 20, 2011·4 cites·18 claims
- 1774US7902082B2Method of forming field effect transistors using diluted hydrofluoric acid to remove sacrificial nitride spacersSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 8, 2011·5 cites·10 claims
- 1874US7863201B2Methods of forming field effect transistors having silicided source/drain contacts with low contact resistanceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jan 4, 2011·4 cites·12 claims
- 1974US7564086B2Self-aligned, silicided, trench-based DRAM/eDRAM processes with improved retentionIBM·Filed 2006·Granted Jul 21, 2009·5 cites·5 claims
- 2073US9870960B2Capacitance monitoring using X-ray diffractionIBM·Filed 2014·Granted Jan 16, 2018·2 cites·20 claims
- 2169US10192887B2Method to improve crystalline regrowthGLOBALFOUNDRIES INC·Filed 2017·Granted Jan 29, 2019·1 cites·10 claims
- 2269US8637958B2Structure and method for forming isolation and buried plate for trench capacitorDUBE ABHISHEK·Filed 2012·Granted Jan 28, 2014·2 cites·11 claims
- 2368US8298908B2Structure and method for forming isolation and buried plate for trench capacitorDUBE ABHISHEK·Filed 2010·Granted Oct 30, 2012·2 cites·14 claims
- 2465US9269607B2Wafer stress control with backside patterningGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 23, 2016·1 cites·7 claims
- 2565US8241981B1Method of fabricating a deep trench (DT) metal-insulator-metal (MIM) capacitorKRISHNAN RISHIKESH·Filed 2011·Granted Aug 14, 2012·2 cites·17 claims
- 2663US9240452B2Array and moat isolation structures and method of manufactureIBM·Filed 2014·Granted Jan 19, 2016·1 cites·15 claims
- 2763US8673737B2Array and moat isolation structures and method of manufactureKUSABA NAOYOSHI·Filed 2011·Granted Mar 18, 2014·2 cites·20 claims
- 2858US10975274B2Acrylic adhesive and protective film including the sameSAMSUNG DISPLAY CO LTD·Filed 2017·Granted Apr 13, 2021·0 cites·20 claims
- 2958US9087927B2Thermally stable high-K tetragonal HFO2 layer within high aspect ratio deep trenchesIBM·Filed 2014·Granted Jul 21, 2015·0 cites·18 claims
- 3058US8963283B2Method of fabricating isolated capacitors and structure thereofIBM·Filed 2014·Granted Feb 24, 2015·0 cites·12 claims
- 3157US8940617B2Method of fabricating isolated capacitors and structure thereofIBM·Filed 2013·Granted Jan 27, 2015·0 cites·16 claims
- 3255US10008421B2Capacitance monitoring using x-ray diffractionIBM·Filed 2017·Granted Jun 26, 2018·0 cites·3 claims
- 3352US7670901B2Method of fabricating a bottle trench and a bottle trench capacitorIBM·Filed 2008·Granted Mar 2, 2010·0 cites·11 claims
- 3451US10115725B2Structure and method for hard mask removal on an SOI substrate without using CMP processKWON OH JUNG·Filed 2012·Granted Oct 30, 2018·0 cites·2 claims
- 3550US9853055B2Method to improve crystalline regrowthGLOBALFOUNDRIES INC·Filed 2016·Granted Dec 26, 2017·0 cites·3 claims
- 3650US2014131815A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 3749US7927968B2Dual stress STIIBM·Filed 2008·Granted Apr 19, 2011·2 cites·8 claims
- 3849US7387930B2Method of fabricating a bottle trench and a bottle trench capacitorIBM·Filed 2006·Granted Jun 17, 2008·0 cites·8 claims
- 3948US2007224754A1Structure and method of three dimensional hybrid orientation technologyIBM·Filed 2007·Application pending·0 cites
- 4045US2008169535A1Sub-lithographic faceting for mosfet performance enhancementIBM·Filed 2007·Application pending·0 cites
- 4144US2007259500A1Structure Having Isolation Structure Including Deuterium Within A Substrate And Related MethodIBM·Filed 2006·Application pending·0 cites
- 4242US5801538ATest pattern group and a method of measuring an insulation film thickness utilizing the sameHYUNDAI ELECTRONICS IND·Filed 1996·Granted Sep 1, 1998·10 cites·7 claims
- 4342US2010197100A1Semiconductor Devices and Methods of Manufacturing ThereofHAN JIN-PING·Filed 2010·Application pending·0 cites
- 4442US2009057755A1Spacer undercut filler, method of manufacture thereof and articles comprising the sameIBM·Filed 2007·Application pending·0 cites
- 4541US2007210306A1Test pattern for measuring contact short at first metal levelIBM·Filed 2006·Application pending·0 cites
- 4641US2008150026A1Metal-oxide-semiconductor field effect transistor with an asymmetric silicideIBM·Filed 2006·Application pending·0 cites
- 4741US2009029549A1Method of silicide formation for nano structuresKWON OH-JUNG·Filed 2007·Application pending·0 cites
- 4840US2008070360A1Method and structure for forming silicide contacts on embedded silicon germanium regions of cmos devicesIBM·Filed 2006·Application pending·0 cites
- 4939US2018158748A1Heat dissipation apparatus for semiconductor moduleKWON OH JUNG·Filed 2017·Application pending·0 cites
- 5036US8030196B2Transistor formation using capping layerSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Oct 4, 2011·0 cites·19 claims
Showing the top 50 of 51 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →