Inventor · disambiguated record

Ravi Keshav Joshi

Also filed as: JOSHI RAVI · JOSHI RAVI KESHAV

37 granted patents·16 pending applications·28 citations·filing 2014–2024

95Inventor score

Technology areasH10P H10D H10W H01L C23C

Files withINFINEON TECHNOLOGIES AG34 INFINEON TECHNOLOGIES AUSTRIA AG18 INFINEON TECHNOLOGIES AUSTRIA1

Top patents by PatentIndex Score

53 records

0194US10573742B1Oxygen inserted Si-layers in vertical trench power devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Feb 25, 2020·11 cites·24 claims
0290US11031466B2Method of forming oxygen inserted Si-layers in power semiconductor devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Jun 8, 2021·2 cites·20 claims
0389US10741638B2Oxygen inserted Si-layers for reduced substrate dopant outdiffusion in power devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Aug 11, 2020·4 cites·13 claims
0486US10861966B2Vertical trench power devices with oxygen inserted Si-layersINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Dec 8, 2020·3 cites·20 claims
0577US9917333B2Lithium ion battery, integrated circuit and method of manufacturing a lithium ion batteryINFINEON TECHNOLOGIES AG·Filed 2014·Granted Mar 13, 2018·2 cites·20 claims
0676US9899325B2Device and method for manufacturing a device with a barrier layerINFINEON TECHNOLOGIES AG·Filed 2014·Granted Feb 20, 2018·1 cites·19 claims
0775US9455136B2Controlling the reflow behaviour of BPSG films and devices made thereofINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Sep 27, 2016·2 cites·24 claims
0871US10256097B2Forming a metal contact layer on silicon carbide and semiconductor device with metal contact structureINFINEON TECHNOLOGIES AG·Filed 2017·Granted Apr 9, 2019·1 cites·15 claims
0971US2024113026A1Silicon Carbide Device and Method for Forming a Silicon Carbide DeviceINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
1064US11545545B2Superjunction device with oxygen inserted Si-layersINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Jan 3, 2023·0 cites·20 claims
1164US9379196B2Method of forming a trench using epitaxial lateral overgrowth and deep vertical trench structureINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted Jun 28, 2016·1 cites·10 claims
1263US11881512B2Method of manufacturing semiconductor device with silicon carbide bodyINFINEON TECHNOLOGIES AG·Filed 2021·Granted Jan 23, 2024·0 cites·14 claims
1362US11842938B2Semiconductor device and method for forming a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2021·Granted Dec 12, 2023·0 cites·18 claims
1460US12463037B2Method of manufacturing ohmic contacts on a silicon carbide (SIC) substrate, method of manufacturing a semiconductor device, and semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2022·Granted Nov 4, 2025·0 cites·23 claims
1560US10777506B2Silicon carbide semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2019·Granted Sep 15, 2020·0 cites·13 claims
1660US9773736B2Intermediate layer for copper structuring and methods of formation thereofINFINEON TECHNOLOGIES AG·Filed 2015·Granted Sep 26, 2017·1 cites·21 claims
1760US2024347456A1Vertical power semiconductor device comprising source or emitter padINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
1859US10910309B2Nanotube structure based metal damascene processINFINEON TECHNOLOGIES AG·Filed 2017·Granted Feb 2, 2021·0 cites·19 claims
1958US2022285149A1Power semiconductor device having a structured metallization layerINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Application pending·0 cites
2057US11387095B2Passivation structuring and plating for semiconductor devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Jul 12, 2022·0 cites·19 claims
2157US11195921B2Semiconductor device with silicon carbide bodyINFINEON TECHNOLOGIES AG·Filed 2019·Granted Dec 7, 2021·0 cites·16 claims
2257US10978395B2Method of manufacturing a semiconductor device having a power metallization structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Apr 13, 2021·0 cites·18 claims
2357US10325803B2Semiconductor wafer and method for processing a semiconductor waferINFINEON TECHNOLOGIES AG·Filed 2018·Granted Jun 18, 2019·0 cites·13 claims
2457US9159669B2Nanotube structure based metal damascene processINFINEON TECHNOLOGIES AG·Filed 2014·Granted Oct 13, 2015·0 cites·7 claims
2556US10790353B2Semiconductor device with superjunction and oxygen inserted Si-layersINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Sep 29, 2020·0 cites·11 claims
2656US2024030032A1Method for manufacturing a contact on a silicon carbide semiconductor substrate, and silicon carbide semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
2755US9984915B2Semiconductor wafer and method for processing a semiconductor waferINFINEON TECHNOLOGIES AG·Filed 2014·Granted May 29, 2018·0 cites·9 claims
2855US9704800B2Nanotube structure based metal damascene processINFINEON TECHNOLOGIES AG·Filed 2015·Granted Jul 11, 2017·0 cites·12 claims
2955US2024055257A1Method for manufacturing a contact on a silicon carbide substrate, and silicon carbide semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
3054US10043750B2Nanotube structure based metal damascene processINFINEON TECHNOLOGIES AG·Filed 2015·Granted Aug 7, 2018·0 cites·12 claims
3154US2025113592A1Semiconductor device with schottky contactINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
3253US2018247820A1Controlling the Reflow Behaviour of BPSG Films and Devices Made ThereofINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Application pending·0 cites
3352US11367683B2Silicon carbide device and method for forming a silicon carbide deviceINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jun 21, 2022·0 cites·25 claims
3452US10475743B2Semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2017·Granted Nov 12, 2019·0 cites·25 claims
3552US2024055256A1Method for manufacturing a contact on a silicon carbide semiconductor substrate, and silicon carbide semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
3652US2023238442A1Semiconductor device with metal nitride layer and a method of manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
3752US2022262906A1Sic mosfet with reduced on-resistanceINFINEON TECHNOLOGIES AG·Filed 2022·Application pending·0 cites
3851US11217500B2Semiconductor device and method for forming a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jan 4, 2022·0 cites·26 claims
3951US10734320B2Power metallization structure for semiconductor devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Aug 4, 2020·0 cites·18 claims
4050US10580878B1SiC device with buried doped regionINFINEON TECHNOLOGIES AG·Filed 2018·Granted Mar 3, 2020·0 cites·20 claims
4149US10049879B2Self aligned silicon carbide contact formation using protective layerINFINEON TECHNOLOGIES AG·Filed 2017·Granted Aug 14, 2018·0 cites·20 claims
4249US9768273B2Method of forming a trench using epitaxial lateral overgrowthINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Sep 19, 2017·0 cites·20 claims
4349US2017011927A1Controlling the Reflow Behaviour of BPSG Films and Devices Made ThereofINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Application pending·0 cites
4448US9666482B1Self aligned silicon carbide contact formation using protective layerINFINEON TECHNOLOGIES AG·Filed 2016·Granted May 30, 2017·0 cites·20 claims
4547US10749216B2Battery, integrated circuit and method of manufacturing a batteryINFINEON TECHNOLOGIES AG·Filed 2014·Granted Aug 18, 2020·0 cites·20 claims
4647US10121859B2Method of manufacturing semiconductor devices with transistor cells and semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2017·Granted Nov 6, 2018·0 cites·22 claims
4742US10347491B2Forming recombination centers in a semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Jul 9, 2019·0 cites·20 claims
4842US2020111896A1Transistor Device and Method for Forming a Recess for a Trench Gate ElectrodeINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Application pending·0 cites
4940US2019333765A1Semiconductor Device and ManufacturingINFINEON TECHNOLOGIES AG·Filed 2019·Application pending·0 cites
5039US9917170B2Carbon based contact structure for silicon carbide device technical fieldINFINEON TECHNOLOGIES AG·Filed 2016·Granted Mar 13, 2018·0 cites·18 claims

Showing the top 50 of 53 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →