Inventor · disambiguated record
Sanjay Gopinath
Also filed as: GOPINATH SANJAY
31 granted patents·8 pending applications·1,083 citations·filing 2000–2025
97Inventor score
Top patents by PatentIndex Score
39 records- 0197US10573522B2Method for preventing line bending during metal fill processLAM RES CORP·Filed 2017·Granted Feb 25, 2020·38 cites·20 claims
- 0297US6365502B1Microelectronic interconnect material with adhesion promotion layer and fabrication methodCVC PRODUCTS INC·Filed 2000·Granted Apr 2, 2002·153 cites·17 claims
- 0396US11355345B2Method for preventing line bending during metal fill processLAM RES CORP·Filed 2019·Granted Jun 7, 2022·21 cites·14 claims
- 0496US6848458B1Apparatus and methods for processing semiconductor substrates using supercritical fluidsNOVELLUS SYSTEMS INC·Filed 2002·Granted Feb 1, 2005·162 cites·59 claims
- 0596US6444263B1Method of chemical-vapor deposition of a materialCVC PRODUCTS INC·Filed 2000·Granted Sep 3, 2002·108 cites·20 claims
- 0695US12362188B2Method for preventing line bending during metal fill processLAM RES CORP·Filed 2022·Granted Jul 15, 2025·2 cites·14 claims
- 0795US9447499B2Dual plenum, axi-symmetric showerhead with edge-to-center gas deliveryROY SHAMBHU N·Filed 2012·Granted Sep 20, 2016·24 cites·19 claims
- 0895US9349637B2Method for void-free cobalt gap fillLAM RES CORP·Filed 2014·Granted May 24, 2016·37 cites·18 claims
- 0995US7503334B1Apparatus and methods for processing semiconductor substrates using supercritical fluidsNOVELLUS SYSTEMS INC·Filed 2005·Granted Mar 17, 2009·49 cites·13 claims
- 1094US7211509B1Method for enhancing the nucleation and morphology of ruthenium films on dielectric substrates using amine containing compoundsNOVELLUS SYSTEMS INC·Filed 2004·Granted May 1, 2007·82 cites·24 claims
- 1194US7037574B2Atomic layer deposition for fabricating thin filmsVEECO INSTR INC·Filed 2001·Granted May 2, 2006·83 cites·30 claims
- 1294US6550484B1Apparatus for maintaining wafer back side and edge exclusion during supercritical fluid processingNOVELLUS SYSTEMS INC·Filed 2001·Granted Apr 22, 2003·91 cites·39 claims
- 1392US9117884B1Conformal films on semiconductor substratesSHAVIV ROEY·Filed 2012·Granted Aug 25, 2015·20 cites·20 claims
- 1491US11348795B2Metal fill process for three-dimensional vertical NAND wordlineLAM RES CORP·Filed 2018·Granted May 31, 2022·7 cites·20 claims
- 1591US9484251B1Contact integration for reduced interface and series contact resistanceLAM RES CORP·Filed 2015·Granted Nov 1, 2016·7 cites·18 claims
- 1691US6645847B2Microelectronic interconnect material with adhesion promotion layer and fabrication methodCVC PRODUCTS INC·Filed 2002·Granted Nov 11, 2003·47 cites·22 claims
- 1791US6627995B2Microelectronic interconnect material with adhesion promotion layer and fabrication methodCVC PRODUCTS INC·Filed 2002·Granted Sep 30, 2003·59 cites·25 claims
- 1890US8298933B2Conformal films on semiconductor substratesSHAVIV ROEY·Filed 2009·Granted Oct 30, 2012·19 cites·19 claims
- 1989US6951765B1Method and apparatus for introduction of solid precursors and reactants into a supercritical fluid reactorNOVELLUS SYSTEMS INC·Filed 2001·Granted Oct 4, 2005·28 cites·15 claims
- 2086US9478411B2Method to tune TiOx stoichiometry using atomic layer deposited Ti film to minimize contact resistance for TiOx/Ti based MIS contact scheme for CMOSLAM RES CORP·Filed 2014·Granted Oct 25, 2016·7 cites·17 claims
- 2186US2025323045A1Method for preventing line bending during metal fill processLAM RES CORP·Filed 2025·Application pending·0 cites
- 2283US9478438B2Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursorLAM RES CORP·Filed 2014·Granted Oct 25, 2016·5 cites·25 claims
- 2382US12203168B2Metal depositionLAM RES CORP·Filed 2020·Granted Jan 21, 2025·1 cites·20 claims
- 2481US9255326B2Systems and methods for remote plasma atomic layer depositionNOVELLUS SYSTEMS INC·Filed 2013·Granted Feb 9, 2016·2 cites·12 claims
- 2581US7041596B1Surface treatment using iodine plasma to improve metal depositionNOVELLUS SYSTEMS INC·Filed 2004·Granted May 9, 2006·25 cites·41 claims
- 2681US2025115998A1Metal depositionLAM RES CORP·Filed 2024·Application pending·0 cites
- 2777US12014928B2Multi-layer feature fillLAM RES CORP·Filed 2019·Granted Jun 18, 2024·2 cites·17 claims
- 2874US2025132201A1Nucleation-free depositionLAM RES CORP·Filed 2024·Application pending·0 cites
- 2972US2024282580A1Multi-layer feature fillLAM RES CORP·Filed 2024·Application pending·0 cites
- 3069US12448686B2Reducing line bending during metal fill processLAM RES CORP·Filed 2022·Granted Oct 21, 2025·0 cites·21 claims
- 3167US7456101B1Method for enhancing the nucleation and morphology of ruthenium films on dielectric substrates using amine containing compoundsNOVELLUS SYSTEMS INC·Filed 2007·Granted Nov 25, 2008·2 cites·13 claims
- 3263US12237221B2Nucleation-free tungsten depositionLAM RES CORP·Filed 2020·Granted Feb 25, 2025·0 cites·20 claims
- 3355US2025022751A1Gradient liner in metal fillLAM RES CORP·Filed 2022·Application pending·0 cites
- 3451US2025287675A1Molybdenum halides in memory applicationsLAM RES CORP·Filed 2023·Application pending·0 cites
- 3551US2025305124A1In situ treatment of molybdenum oxyhalide byproducts in semiconductor processing equipmentLAM RES CORP·Filed 2023·Application pending·0 cites
- 3649US7279417B1Use of metallocenes to inhibit copper oxidation during semiconductor processingNOVELLUS SYSTEMS INC·Filed 2004·Granted Oct 9, 2007·2 cites·23 claims
- 3748US12077858B2Tungsten depositionLAM RES CORP·Filed 2020·Granted Sep 3, 2024·0 cites·21 claims
- 3846US12060639B2Rapid flush purging during atomic layer depositionLAM RES CORP·Filed 2020·Granted Aug 13, 2024·0 cites·20 claims
- 3935US2017170114A1Multilayer film including a tantalum and titanium alloy as a scalable barrier diffusion layer for copper interconnectsLAM RES CORP·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →