Inventor · disambiguated record
Siva Kanakasabapathy
Also filed as: KANAKASABAPATHY SIVA · KANAKASABAPATHY SIVA K · KANAKASABAPATHY SIVA KRISHNAN
22 granted patents·5 pending applications·98 citations·filing 2000–2025
94Inventor score
Top patents by PatentIndex Score
27 records- 0195US10229854B1FinFET gate cut after dummy gate removalIBM·Filed 2017·Granted Mar 12, 2019·11 cites·11 claims
- 0294US10741660B2Nanosheet single gate (SG) and extra gate (EG) field effect transistor (FET) co-integrationIBM·Filed 2018·Granted Aug 11, 2020·9 cites·7 claims
- 0393US11842888B2Removing metal contamination from surfaces of a processing chamberLAM RES CORP·Filed 2022·Granted Dec 12, 2023·1 cites·24 claims
- 0493US10553700B2Gate cut in RMGIBM·Filed 2018·Granted Feb 4, 2020·6 cites·12 claims
- 0592US10692990B2Gate cut in RMGIBM·Filed 2019·Granted Jun 23, 2020·5 cites·18 claims
- 0691USRE50613EFinFET gate cut after dummy gate removalADEIA SEMICONDUCTOR SOLUTIONS LLC·Filed 2022·Granted Sep 30, 2025·1 cites·38 claims
- 0790US10622482B2Gate cut using selective deposition to prevent oxide lossIBM·Filed 2019·Granted Apr 14, 2020·4 cites·16 claims
- 0888US10504798B2Gate cut in replacement metal gate processGLOBALFOUNDRIES INC·Filed 2018·Granted Dec 10, 2019·5 cites·5 claims
- 0987US12191125B2Removing metal contamination from surfaces of a processing chamberLAM RES CORP·Filed 2023·Granted Jan 7, 2025·0 cites·18 claims
- 1086US10347540B1Gate cut using selective deposition to prevent oxide lossIBM·Filed 2017·Granted Jul 9, 2019·3 cites·20 claims
- 1186US9627263B1Stop layer through ion implantation for etch stopIBM·Filed 2015·Granted Apr 18, 2017·4 cites·6 claims
- 1285US7820552B2Advanced high-k gate stack patterning and structure containing a patterned high-k gate stackIBM·Filed 2007·Granted Oct 26, 2010·10 cites·31 claims
- 1383US11024715B2FinFET gate cut after dummy gate removalTESSERA INC·Filed 2020·Granted Jun 1, 2021·1 cites·20 claims
- 1483US6676800B1Particle contamination cleaning from substrates using plasmas, reactive gases, and mechanical agitationAPPLIED MATERIALS INC·Filed 2000·Granted Jan 13, 2004·38 cites·37 claims
- 1573US2022037132A1Removing metal contamination from surfaces of a processing chamberLAM RES CORP·Filed 2019·Application pending·0 cites
- 1670US11990342B2Metal cut patterning and etching to minimize interlayer dielectric layer lossIBM·Filed 2021·Granted May 21, 2024·0 cites·17 claims
- 1768US2025216788A1Bubble defect reductionLAM RES CORP·Filed 2025·Application pending·0 cites
- 1864US10644129B2Gate cut in RMGIBM·Filed 2019·Granted May 5, 2020·0 cites·19 claims
- 1963US10600868B2FinFET gate cut after dummy gate removalTESSERA INC·Filed 2019·Granted Mar 24, 2020·0 cites·19 claims
- 2061US11133189B2Metal cut patterning and etching to minimize interlayer dielectric layer lossIBM·Filed 2019·Granted Sep 28, 2021·0 cites·7 claims
- 2160US12248252B2Bubble defect reductionLAM RES CORP·Filed 2019·Granted Mar 11, 2025·0 cites·7 claims
- 2258US10734234B2Metal cut patterning and etching to minimize interlayer dielectric layer lossIBM·Filed 2017·Granted Aug 4, 2020·0 cites·8 claims
- 2356US2025328081A1Underlayer with bonded dopants for photolithographyLAM RES CORP·Filed 2023·Application pending·0 cites
- 2455US2019206864A1StoplayerIBM·Filed 2019·Application pending·0 cites
- 2550US2017148790A1Stop Layer Through Ion Implantation For Etch StopIBM·Filed 2017·Application pending·0 cites
- 2649US11054250B2Multi-channel overlay metrologyIBM·Filed 2018·Granted Jul 6, 2021·0 cites·9 claims
- 2744US10167558B1Phase shifted gas delivery for high throughput and cost effectiveness associated with atomic layer etching and atomic layer depositionIBM·Filed 2017·Granted Jan 1, 2019·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →