Inventor · disambiguated record
Stuart A. Sieg
Also filed as: SIEG STUART · SIEG STUART A
69 granted patents·9 pending applications·246 citations·filing 2011–2023
98Inventor score
Top patents by PatentIndex Score
78 records- 0198US9721848B1Cutting fins and gates in CMOS devicesIBM·Filed 2016·Granted Aug 1, 2017·32 cites·20 claims
- 0298US9472506B2Registration mark formation during sidewall image transfer processIBM·Filed 2015·Granted Oct 18, 2016·26 cites·7 claims
- 0397US10304744B1Inverse tone direct print EUV lithography enabled by selective material depositionIBM·Filed 2018·Granted May 28, 2019·23 cites·14 claims
- 0496US11610780B2Alternating hardmasks for tight-pitch line formationTESSERA LLC·Filed 2021·Granted Mar 21, 2023·2 cites·20 claims
- 0596US10361129B1Self-aligned double patterning formed fincutIBM·Filed 2018·Granted Jul 23, 2019·14 cites·18 claims
- 0696US9209178B2finFET isolation by selective cyclic etchIBM·Filed 2013·Granted Dec 8, 2015·26 cites·11 claims
- 0795US10176997B1Direct gate patterning for vertical transport field effect transistorIBM·Filed 2017·Granted Jan 8, 2019·12 cites·13 claims
- 0895US9589958B1Pitch scalable active area patterning structure and process for multi-channel finFET technologiesIBM·Filed 2016·Granted Mar 7, 2017·12 cites·16 claims
- 0995US9305845B2Self-aligned quadruple patterning processIBM·Filed 2014·Granted Apr 5, 2016·17 cites·19 claims
- 1094US12444653B2Buried power rail at tight cell-to-cell spaceIBM·Filed 2021·Granted Oct 14, 2025·2 cites·14 claims
- 1194US10103022B2Alternating hardmasks for tight-pitch line formationIBM·Filed 2017·Granted Oct 16, 2018·8 cites·20 claims
- 1294US9252022B1Patterning assist feature to mitigate reactive ion etch microloading effectIBM·Filed 2014·Granted Feb 2, 2016·17 cites·19 claims
- 1391US10410875B2Alternating hardmasks for tight-pitch line formationIBM·Filed 2017·Granted Sep 10, 2019·4 cites·20 claims
- 1489US9882048B2Gate cut on a vertical field effect transistor with a defined-width inorganic maskIBM·Filed 2016·Granted Jan 30, 2018·5 cites·12 claims
- 1589US8822141B1Front side wafer ID processingIBM·Filed 2013·Granted Sep 2, 2014·10 cites·12 claims
- 1688US10249753B2Gate cut on a vertical field effect transistor with a defined-width inorganic maskIBM·Filed 2017·Granted Apr 2, 2019·4 cites·20 claims
- 1787US11990412B2Buried power rails located in a base layer including first, second, and third etch stop layersIBM·Filed 2021·Granted May 21, 2024·1 cites·6 claims
- 1887US11031248B2Alternating hardmasks for tight-pitch line formationTESSERA INC·Filed 2019·Granted Jun 8, 2021·2 cites·21 claims
- 1987US9859224B2Registration mark formation during sidewall image transfer processIBM·Filed 2016·Granted Jan 2, 2018·3 cites·12 claims
- 2087US9502411B1Strained finFET device fabricationIBM·Filed 2015·Granted Nov 22, 2016·3 cites·7 claims
- 2186US9812324B1Methods to control fin tip placementGLOBALFOUNDRIES INC·Filed 2017·Granted Nov 7, 2017·4 cites·14 claims
- 2285US12322601B2Alternating hardmasks for tight-pitch line formationADEIA SEMICONDUCTOR SOLUTIONS LLC·Filed 2023·Granted Jun 3, 2025·0 cites·22 claims
- 2383US10580652B2Alternating hardmasks for tight-pitch line formationIBM·Filed 2018·Granted Mar 3, 2020·2 cites·20 claims
- 2483US9673199B1Gate cutting for a vertical transistor deviceIBM·Filed 2016·Granted Jun 6, 2017·3 cites·20 claims
- 2582US10312346B2Vertical transistor with variable gate lengthIBM·Filed 2016·Granted Jun 4, 2019·4 cites·4 claims
- 2681US9741856B2Stress retention in fins of fin field-effect transistorsIBM·Filed 2015·Granted Aug 22, 2017·2 cites·15 claims
- 2780US9997369B2Margin for fin cut using self-aligned triple patterningIBM·Filed 2016·Granted Jun 12, 2018·2 cites·20 claims
- 2879US10121785B2Pitch scalable active area patterning structure and process for multi-channel fin FET technologiesIBM·Filed 2017·Granted Nov 6, 2018·2 cites·1 claims
- 2978US10734372B2Vertical transport static random-access memory cells with transistors of active regions arranged in linear rowsIBM·Filed 2018·Granted Aug 4, 2020·2 cites·20 claims
- 3078US10312103B2Alternating hardmasks for tight-pitch line formationIBM·Filed 2017·Granted Jun 4, 2019·1 cites·15 claims
- 3176USRE50174EStructure and process to tuck fin tips self-aligned to gatesTESSERA LLC·Filed 2022·Granted Oct 15, 2024·0 cites·24 claims
- 3273US11205723B2Selective source/drain recess for improved performance, isolation, and scalingIBM·Filed 2019·Granted Dec 21, 2021·1 cites·16 claims
- 3368US12080559B2Using a same mask for direct print and self-aligned double patterning of nanosheetsIBM·Filed 2021·Granted Sep 3, 2024·0 cites·20 claims
- 3467US11171002B2Alternating hardmasks for tight-pitch line formationTESSERA INC·Filed 2020·Granted Nov 9, 2021·0 cites·16 claims
- 3563US10242952B2Registration mark formation during sidewall image transfer processIBM·Filed 2018·Granted Mar 26, 2019·0 cites·14 claims
- 3662US11121024B2Tunable hardmask for overlayer metrology contrastIBM·Filed 2019·Granted Sep 14, 2021·0 cites·20 claims
- 3761US10622248B2Tunable hardmask for overlayer metrology contrastIBM·Filed 2018·Granted Apr 14, 2020·0 cites·20 claims
- 3861US10043760B2Registration mark formation during sidewall image transfer processIBM·Filed 2017·Granted Aug 7, 2018·0 cites·9 claims
- 3960US10121853B2Structure and process to tuck fin tips self-aligned to gatesIBM·Filed 2017·Granted Nov 6, 2018·0 cites·17 claims
- 4060US10121852B2Structure and process to tuck fin tips self-aligned to gatesIBM·Filed 2017·Granted Nov 6, 2018·0 cites·15 claims
- 4159US11257681B2Using a same mask for direct print and self-aligned double patterning of nanosheetsIBM·Filed 2019·Granted Feb 22, 2022·0 cites·20 claims
- 4259US10304689B2Margin for fin cut using self-aligned triple patterningIBM·Filed 2018·Granted May 28, 2019·0 cites·20 claims
- 4359US10211321B2Stress retention in fins of fin field-effect transistorsIBM·Filed 2017·Granted Feb 19, 2019·0 cites·6 claims
- 4459US10211319B2Stress retention in fins of fin field-effect transistorsIBM·Filed 2017·Granted Feb 19, 2019·0 cites·6 claims
- 4558US12268026B2High aspect ratio contact structure with multiple metal stacksIBM·Filed 2022·Granted Apr 1, 2025·0 cites·20 claims
- 4658US10032680B2Strained finFET device fabricationIBM·Filed 2015·Granted Jul 24, 2018·0 cites·14 claims
- 4758US2020144069A1Semiconductor Fin Length Variability ControlIBM·Filed 2020·Application pending·0 cites
- 4857US12324236B2Bottom contact for stacked GAA FETIBM·Filed 2021·Granted Jun 3, 2025·0 cites·20 claims
- 4957US9917019B2Strained FinFET device fabricationIBM·Filed 2015·Granted Mar 13, 2018·0 cites·4 claims
- 5057US9805991B2Strained finFET device fabricationIBM·Filed 2015·Granted Oct 31, 2017·0 cites·19 claims
Showing the top 50 of 78 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →