Inventor · disambiguated record
Tetsuo Matsuda
Also filed as: MATSUDA TETSUO
53 granted patents·16 pending applications·2,271 citations·filing 1989–2018
99Inventor score
Top patents by PatentIndex Score
69 records- 0197US6632335B2Plating apparatusEBARA CORP·Filed 2000·Granted Oct 14, 2003·114 cites·77 claims
- 0297US6563308B2Eddy current loss measuring sensor, thickness measuring system, thickness measuring method, and recorded mediumTOSHIBA KK·Filed 2001·Granted May 13, 2003·144 cites·47 claims
- 0396US6375823B1Plating method and plating apparatusTOSHIBA KK·Filed 2000·Granted Apr 23, 2002·96 cites·12 claims
- 0496US5563105APECVD method of depositing fluorine doped oxide using a fluorine precursor containing a glass-forming elementIBM·Filed 1994·Granted Oct 8, 1996·332 cites·20 claims
- 0596US5413967AMethod of manufacturing semiconductor devicesTOSHIBA KK·Filed 1994·Granted May 9, 1995·292 cites·11 claims
- 0695US6638411B1Method and apparatus for plating substrate with copperEBARA CORP·Filed 2000·Granted Oct 28, 2003·46 cites·13 claims
- 0795US6251763B1Semiconductor device and method for manufacturing sameTOSHIBA KK·Filed 1998·Granted Jun 26, 2001·114 cites·14 claims
- 0893US6348402B1Method of manufacturing a copper interconnectTOSHIBA KK·Filed 2000·Granted Feb 19, 2002·87 cites·21 claims
- 0990US5998100AFabrication process using a multi-layer antireflective layerTOSHIBA KK·Filed 1997·Granted Dec 7, 1999·89 cites·5 claims
- 1089US9947751B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2017·Granted Apr 17, 2018·6 cites·6 claims
- 1189US7595530B2Power semiconductor device with epitaxially-filled trenchesTOSHIBA KK·Filed 2006·Granted Sep 29, 2009·12 cites·8 claims
- 1289US6229211B1Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 1999·Granted May 8, 2001·88 cites·19 claims
- 1387US7420245B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2005·Granted Sep 2, 2008·12 cites·12 claims
- 1487US6787827B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2002·Granted Sep 7, 2004·30 cites·6 claims
- 1587US5759746AFabrication process using a thin resistTOSHIBA KK·Filed 1996·Granted Jun 2, 1998·75 cites·17 claims
- 1686US4923715AMethod of forming thin film by chemical vapor depositionTOSHIBA KK·Filed 1989·Granted May 8, 1990·50 cites·17 claims
- 1785US6291891B1Semiconductor device manufacturing method and semiconductor deviceTOSHIBA KK·Filed 1999·Granted Sep 18, 2001·69 cites·26 claims
- 1884US6611060B1Semiconductor device having a damascene type wiring layerTOSHIBA KK·Filed 2000·Granted Aug 26, 2003·26 cites·10 claims
- 1983US6579785B2Method of making multi-level wiring in a semiconductor deviceTOSHIBA KK·Filed 2001·Granted Jun 17, 2003·31 cites·16 claims
- 2082US6913681B2Plating method and plating apparatusTOSHIBA KK·Filed 2002·Granted Jul 5, 2005·20 cites·9 claims
- 2182US5132756AMethod of manufacturing semiconductor devicesTOSHIBA KK·Filed 1990·Granted Jul 21, 1992·78 cites·7 claims
- 2281US6342444B1Method of forming diffusion barrier for copper interconnectsTOSHIBA KK·Filed 2000·Granted Jan 29, 2002·32 cites·18 claims
- 2380US6403481B1Film formation methodTOSHIBA KK·Filed 1999·Granted Jun 11, 2002·55 cites·15 claims
- 2480US4866009AMultilayer wiring technique for a semiconductor deviceTOSHIBA KK·Filed 1989·Granted Sep 12, 1989·55 cites·12 claims
- 2579US6150270AMethod for forming barrier layer for copper metallizationTOSHIBA KK·Filed 1999·Granted Nov 21, 2000·54 cites·7 claims
- 2678US6518177B1Method of manufacturing a semiconductor deviceTOSHIBA KK·Filed 2001·Granted Feb 11, 2003·23 cites·7 claims
- 2777US7898031B2Semiconductor device with tapered trenches and impurity concentration gradientsTOSHIBA KK·Filed 2010·Granted Mar 1, 2011·3 cites·7 claims
- 2877US5679610AMethod of planarizing a semiconductor workpiece surfaceTOSHIBA KK·Filed 1994·Granted Oct 21, 1997·59 cites·31 claims
- 2974US7575664B2Plating methodTOSHIBA KK·Filed 2005·Granted Aug 18, 2009·3 cites·7 claims
- 3072US6368951B2Semiconductor device manufacturing method and semiconductor deviceTOSHIBA KK·Filed 2001·Granted Apr 9, 2002·16 cites·4 claims
- 3170US7214305B2Method of manufacturing electronic deviceTOSHIBA KK·Filed 2003·Granted May 8, 2007·12 cites·3 claims
- 3270US6403997B1Method for manufacturing semiconductor devicesTOSHIBA KK·Filed 2000·Granted Jun 11, 2002·11 cites·7 claims
- 3370US5094879AMethod of activating at least one gas to produce different charged species, selecting specific species, decelerating the species, and chemically reacting the species to form a thin filmTOSHIBA KK·Filed 1990·Granted Mar 10, 1992·24 cites·13 claims
- 3468US8067310B2Semiconductor device and method for manufacturing of sameIMAMURA TOMOMI·Filed 2009·Granted Nov 29, 2011·5 cites·10 claims
- 3568US7936015B2Semiconductor device having trenches filled with a semiconductor having an impurity concentration gradientTOSHIBA KK·Filed 2009·Granted May 3, 2011·2 cites·7 claims
- 3668US7387717B2Method of performing electrolytic treatment on a conductive layer of a substrateEBARA CORP·Filed 2003·Granted Jun 17, 2008·3 cites·13 claims
- 3766US6333215B1Method for manufacturing a semiconductor deviceTOSHIBA KK·Filed 1998·Granted Dec 25, 2001·31 cites·30 claims
- 3865US6764585B2Electronic device manufacturing methodTOSHIBA KK·Filed 2001·Granted Jul 20, 2004·8 cites·12 claims
- 3963US6767437B2Electroplating apparatus and electroplating methodTOSHIBA KK·Filed 2001·Granted Jul 27, 2004·3 cites·14 claims
- 4063US6632476B2Substrate processing method and substrate processing apparatusTOSHIBA KK·Filed 2001·Granted Oct 14, 2003·8 cites·23 claims
- 4162US6746589B2Plating method and plating apparatusEBARA CORP·Filed 2001·Granted Jun 8, 2004·9 cites·16 claims
- 4257US2008251385A1Plating apparatusKUNISAWA JUNJI·Filed 2008·Application pending·0 cites
- 4357US2008296165A1Plating apparatusKUNISAWA JUNJI·Filed 2008·Application pending·0 cites
- 4453US6897143B2Method of manufacturing semiconductor device including two-step polishing operation for cap metalTOSHIBA KK·Filed 2003·Granted May 24, 2005·3 cites·14 claims
- 4553US5958630APhase shifting mask and method of manufacturing the sameTOSHIBA KK·Filed 1997·Granted Sep 28, 1999·13 cites·23 claims
- 4652US11011609B2Method of manufacturing a semiconductor deviceTOSHIBA KK·Filed 2018·Granted May 18, 2021·0 cites·16 claims
- 4751US7486663B2Remote access server wherein the number of logical link resources is set higher than the number of physical link resourcesNEC CORP·Filed 2004·Granted Feb 3, 2009·3 cites·4 claims
- 4851US6998342B2Electronic device manufacturing methodTOSHIBA KK·Filed 2004·Granted Feb 14, 2006·2 cites·1 claims
- 4951US2004050711A1Method and apparatus for plating substrate with copperFiled 2003·Application pending·0 cites
- 5049US8810032B2Semiconductor device and method for manufacturing of sameTOSHIBA KK·Filed 2013·Granted Aug 19, 2014·0 cites·4 claims
Showing the top 50 of 69 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →