Inventor · disambiguated record
Thorsten Kammler
Also filed as: KAMMLER THORSTEN · KAMMLER THORSTEN E · KAMMLER THORSTEN ERICH
65 granted patents·19 pending applications·619 citations·filing 2002–2023
99Inventor score
Files withADVANCED MICRO DEVICES INC41GLOBALFOUNDRIES INC13KAMMLER THORSTEN6WEI ANDY5GLOBALFOUNDRIES DRESDEN MOD 13
Top patents by PatentIndex Score
84 records- 0195US8114746B2Method for forming double gate and tri-gate transistors on a bulk substrateWEI ANDY·Filed 2009·Granted Feb 14, 2012·38 cites·28 claims
- 0295US8053273B2Shallow PN junction formed by in situ doping during selective growth of an embedded semiconductor alloy by a cyclic growth/etch deposition processADVANCED MICRO DEVICES INC·Filed 2009·Granted Nov 8, 2011·32 cites·19 claims
- 0395US7399663B2Embedded strain layer in thin SOI transistors and a method of forming the sameADVANCED MICRO DEVICES INC·Filed 2006·Granted Jul 15, 2008·31 cites·18 claims
- 0494US7586153B2Technique for forming recessed strained drain/source regions in NMOS and PMOS transistorsADVANCED MICRO DEVICES INC·Filed 2006·Granted Sep 8, 2009·25 cites·17 claims
- 0594US7456062B1Method of forming a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2005·Granted Nov 25, 2008·25 cites·21 claims
- 0694US7354838B2Technique for forming a contact insulation layer with enhanced stress transfer efficiencyADVANCED MICRO DEVICES INC·Filed 2005·Granted Apr 8, 2008·28 cites·19 claims
- 0793US7579262B2Different embedded strain layers in PMOS and NMOS transistors and a method of forming the sameADVANCED MICRO DEVICES INC·Filed 2006·Granted Aug 25, 2009·25 cites·23 claims
- 0892US7329571B2Technique for providing multiple stress sources in NMOS and PMOS transistorsADVANCED MICRO DEVICES INC·Filed 2006·Granted Feb 12, 2008·24 cites·29 claims
- 0991US7763505B2Method for reducing crystal defects in transistors with re-grown shallow junctions by appropriately selecting crystalline orientationsGLOBALFOUNDRIES INC·Filed 2007·Granted Jul 27, 2010·18 cites·16 claims
- 1091US7659213B2Transistor having an embedded tensile strain layer with reduced offset to the gate electrode and a method for forming the sameGLOBALFOUNDRIES INC·Filed 2006·Granted Feb 9, 2010·20 cites·21 claims
- 1191US6838363B2Circuit element having a metal silicide region thermally stabilized by a barrier diffusion materialADVANCED MICRO DEVICES INC·Filed 2003·Granted Jan 4, 2005·54 cites·24 claims
- 1290US7494906B2Technique for transferring strain into a semiconductor regionADVANCED MICRO DEVICES INC·Filed 2005·Granted Feb 24, 2009·22 cites·35 claims
- 1388US7767540B2Transistor having a channel with tensile strain and oriented along a crystallographic orientation with increased charge carrier mobilityADVANCED MICRO DEVICES INC·Filed 2006·Granted Aug 3, 2010·11 cites·11 claims
- 1488US7381622B2Method for forming embedded strained drain/source regions based on a combined spacer and cavity etch processADVANCED MICRO DEVICES INC·Filed 2006·Granted Jun 3, 2008·14 cites·19 claims
- 1586US7829421B2SOI transistor having an embedded strain layer and a reduced floating body effect and a method for forming the sameADVANCED MICRO DEVICES INC·Filed 2006·Granted Nov 9, 2010·11 cites·8 claims
- 1685US9514942B1Method of forming a gate mask for fabricating a structure of gate linesGLOBALFOUNDRIES INC·Filed 2016·Granted Dec 6, 2016·5 cites·20 claims
- 1785US7696052B2Technique for providing stress sources in transistors in close proximity to a channel region by recessing drain and source regionsADVANCED MICRO DEVICES INC·Filed 2006·Granted Apr 13, 2010·10 cites·13 claims
- 1884US8779529B2Self-aligned silicidation for replacement gate processSEN INDRADEEP·Filed 2012·Granted Jul 15, 2014·9 cites·20 claims
- 1984US7421060B2Method of determining an orientation of a crystal lattice of a first substrate relative to a crystal lattice of a second substrateADVANCED MICRO DEVICES INC·Filed 2007·Granted Sep 2, 2008·16 cites·21 claims
- 2083US7176110B2Technique for forming transistors having raised drain and source regions with different heightsADVANCED MICRO DEVICES INC·Filed 2004·Granted Feb 13, 2007·32 cites·4 claims
- 2182US7402485B1Method of forming a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2005·Granted Jul 22, 2008·9 cites·16 claims
- 2282US7402497B2Transistor device having an increased threshold stability without drive current degradationADVANCED MICRO DEVICES INC·Filed 2006·Granted Jul 22, 2008·7 cites·19 claims
- 2378US8119461B2Reducing the creation of charge traps at gate dielectrics in MOS transistors by performing a hydrogen treatmentTRENTZSCH MARTIN·Filed 2010·Granted Feb 21, 2012·5 cites·3 claims
- 2478US8039878B2Transistor having a channel with tensile strain and oriented along a crystallographic orientation with increased charge carrier mobilityADVANCED MICRO DEVICES INC·Filed 2010·Granted Oct 18, 2011·3 cites·19 claims
- 2577US8324119B2Enhancing deposition uniformity of a channel semiconductor alloy by an in situ etch processREICHEL CARSTEN·Filed 2010·Granted Dec 4, 2012·6 cites·16 claims
- 2676US7381624B2Technique for forming a substrate having crystalline semiconductor regions of different characteristics located above a crystalline bulk substrateADVANCED MICRO DEVICES INC·Filed 2005·Granted Jun 3, 2008·5 cites·13 claims
- 2774US8481404B2Leakage control in field effect transistors based on an implantation species introduced locally at the STI edgeKAMMLER THORSTEN·Filed 2010·Granted Jul 9, 2013·4 cites·20 claims
- 2873US8293596B2Formation of a channel semiconductor alloy by depositing a hard mask for the selective epitaxial growthKRONHOLZ STEPHAN·Filed 2010·Granted Oct 23, 2012·4 cites·22 claims
- 2972US7192881B2Method of forming sidewall spacer elements for a circuit element by increasing an etch selectivityADVANCED MICRO DEVICES INC·Filed 2004·Granted Mar 20, 2007·14 cites·15 claims
- 3071US8198166B2Using high-k dielectrics as highly selective etch stop materials in semiconductor devicesKAMMLER THORSTEN·Filed 2010·Granted Jun 12, 2012·3 cites·17 claims
- 3171US7843015B2Multi-silicide system in integrated circuit technologyGLOBALFOUNDRIES INC·Filed 2005·Granted Nov 30, 2010·4 cites·6 claims
- 3271US7510926B2Technique for providing stress sources in MOS transistors in close proximity to a channel regionADVANCED MICRO DEVICES INC·Filed 2006·Granted Mar 31, 2009·4 cites·9 claims
- 3371US7122410B2Polysilicon line having a metal silicide region enabling linewidth scaling including forming a second metal silicide region on the substrateADVANCED MICRO DEVICES INC·Filed 2004·Granted Oct 17, 2006·15 cites·24 claims
- 3470US6746927B2Semiconductor device having a polysilicon line structure with increased metal silicide portions and method for forming the polysilicon line structure of a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2003·Granted Jun 8, 2004·15 cites·36 claims
- 3569US6806126B1Method of manufacturing a semiconductor componentADVANCED MICRO DEVICES INC·Filed 2002·Granted Oct 19, 2004·12 cites·25 claims
- 3666US8361870B2Self-aligned silicidation for replacement gate processGLOBALFOUNDRIES INC·Filed 2010·Granted Jan 29, 2013·2 cites·15 claims
- 3765US10141229B2Process for forming semiconductor layers of different thickness in FDSOI technologiesGLOBALFOUNDRIES INC·Filed 2016·Granted Nov 27, 2018·1 cites·18 claims
- 3864US7109086B2Technique for forming a spacer for a line element by using an etch stop layer deposited by a highly directional deposition techniqueADVANCED MICRO DEVICES INC·Filed 2004·Granted Sep 19, 2006·11 cites·27 claims
- 3963US9450073B2SOI transistor having drain and source regions of reduced length and a stressed dielectric material adjacent theretoWEI ANDY·Filed 2007·Granted Sep 20, 2016·2 cites·23 claims
- 4063US8906811B2Shallow pn junction formed by in situ doping during selective growth of an embedded semiconductor alloy by a cyclic growth/etch deposition processKAMMLER THORSTEN·Filed 2011·Granted Dec 9, 2014·1 cites·9 claims
- 4161US8440516B2Method of forming a field effect transistorWEI ANDY·Filed 2010·Granted May 14, 2013·1 cites·8 claims
- 4261US6969678B1Multi-silicide in integrated circuit technologyADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 29, 2005·8 cites·8 claims
- 4360US7279389B2Technique for forming a transistor having raised drain and source regions with a tri-layer hard mask for gate patterningADVANCED MICRO DEVICES INC·Filed 2005·Granted Oct 9, 2007·2 cites·29 claims
- 4460US7005358B2Technique for forming recessed sidewall spacers for a polysilicon lineADVANCED MICRO DEVICES INC·Filed 2004·Granted Feb 28, 2006·9 cites·33 claims
- 4559US11705455B2High voltage extended drain MOSFET (EDMOS) devices in a high-k metal gate (HKMG)GLOBALFOUNDRIES US INC·Filed 2020·Granted Jul 18, 2023·0 cites·20 claims
- 4659US7723195B2Method of forming a field effect transistorADVANCED MICRO DEVICES INC·Filed 2006·Granted May 25, 2010·1 cites·10 claims
- 4755US11289598B2Co-integrated high voltage (HV) and medium voltage (MV) field effect transistorsGLOBALFOUNDRIES DRESDEN MOD 1·Filed 2020·Granted Mar 29, 2022·0 cites·17 claims
- 4854US6933620B2Semiconductor component and method of manufactureADVANCED MICRO DEVICES INC·Filed 2004·Granted Aug 23, 2005·6 cites·20 claims
- 4952US8518784B2Adjusting of strain caused in a transistor channel by semiconductor material provided for threshold adjustmentKRONHOLZ STEPHAN·Filed 2009·Granted Aug 27, 2013·0 cites·20 claims
- 5052US2025113744A1Quantum dot structuresGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
Showing the top 50 of 84 patent records by PatentIndex Score.
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