Inventor · disambiguated record
Tsung-Lin Lee
Also filed as: LEE TSUNG-LIN · LEE TSUNG-LIN LEE
136 granted patents·26 pending applications·2,394 citations·filing 2001–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD103TAIWAN SEMICONDUCTOR MFG28LEE TSUNG-LIN13YUAN FENG5SILICON INTEGRATED SYS CORP3
Top patents by PatentIndex Score
162 records- 0198US9171929B2Strained structure of semiconductor device and method of making the strained structureLEE TSUNG-LIN·Filed 2012·Granted Oct 27, 2015·593 cites·20 claims
- 0298US8847293B2Gate structure for semiconductor deviceLEE TSUNG-LIN·Filed 2012·Granted Sep 30, 2014·518 cites·17 claims
- 0398US8610240B2Integrated circuit with multi recessed shallow trench isolationLEE TSUNG-LIN·Filed 2010·Granted Dec 17, 2013·192 cites·15 claims
- 0498US8497528B2Method for fabricating a strained structureLEE TSUNG-LIN·Filed 2010·Granted Jul 30, 2013·241 cites·19 claims
- 0598US8110466B2Cross OD FinFET patterningSHIEH MING-FENG·Filed 2010·Granted Feb 7, 2012·44 cites·14 claims
- 0697US11508831B2Gate spacer structure and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 22, 2022·4 cites·20 claims
- 0797US10374059B2Structure and formation method of semiconductor device structure with nanowiresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 6, 2019·14 cites·20 claims
- 0897US8941153B2FinFETs with different fin heightsLEE TSUNG-LIN·Filed 2010·Granted Jan 27, 2015·46 cites·18 claims
- 0997US8373238B2FinFETs with multiple Fin heightsTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Feb 12, 2013·39 cites·17 claims
- 1097US7176084B2Self-aligned conductive spacer process for sidewall control gate of high-speed random access memoryTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Feb 13, 2007·66 cites·18 claims
- 1196US11984489B2Air spacer for a gate structure of a transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 14, 2024·2 cites·20 claims
- 1296US9847334B1Structure and formation method of semiconductor device with channel layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 19, 2017·17 cites·20 claims
- 1396US9647071B2FINFET structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 9, 2017·11 cites·20 claims
- 1496US9564529B2Method for fabricating a strained structure and structure formedTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 7, 2017·10 cites·20 claims
- 1596US8946828B2Semiconductor device having elevated structure and method of manufacturing the sameSUN SEY-PING·Filed 2010·Granted Feb 3, 2015·83 cites·15 claims
- 1696US8174073B2Integrated circuit structures with multiple FinFETsLEE TSUNG-LIN·Filed 2007·Granted May 8, 2012·51 cites·3 claims
- 1795US11508628B2Method for forming a crystalline protective polysilicon layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 22, 2022·3 cites·8 claims
- 1895US9147594B2Method for fabricating a strained structureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 29, 2015·13 cites·20 claims
- 1995US8748993B2FinFETs with multiple fin heightsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 10, 2014·18 cites·20 claims
- 2095US8673709B2FinFETs with multiple fin heightsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 18, 2014·17 cites·20 claims
- 2195US8519481B2Voids in STI regions for forming bulk FinFETsYUAN FENG·Filed 2009·Granted Aug 27, 2013·35 cites·29 claims
- 2295US8338305B2Multi-fin device by self-aligned castle fin formationCHEN HSIN-CHIH·Filed 2010·Granted Dec 25, 2012·25 cites·19 claims
- 2395US7482236B2Structure and method for a sidewall SONOS memory deviceTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jan 27, 2009·39 cites·20 claims
- 2494US10868142B2Gate spacer structure and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·7 cites·20 claims
- 2594US9953885B2STI shape near fin bottom of Si fin in bulk FinFETYUAN FENG·Filed 2010·Granted Apr 24, 2018·24 cites·20 claims
- 2693US12199169B2Structure and formation method of semiconductor device structure with nanowiresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 14, 2025·2 cites·20 claims
- 2793US11855207B2FinFET structure and method with reduced fin bucklingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·1 cites·20 claims
- 2893US9761666B2Strained channel field effect transistorVAN DAL MARK·Filed 2011·Granted Sep 12, 2017·10 cites·7 claims
- 2993US9263342B2Semiconductor device having a strained regionLEE TSUNG-LIN·Filed 2012·Granted Feb 16, 2016·13 cites·16 claims
- 3093US9112052B2Voids in STI regions for forming bulk FinFETsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Aug 18, 2015·10 cites·20 claims
- 3193US9087725B2FinFETs with different fin height and EPI height settingTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jul 21, 2015·11 cites·20 claims
- 3292US8723271B2Voids in STI regions for forming bulk FinFETsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 13, 2014·12 cites·20 claims
- 3391US8653608B2FinFET design with reduced current crowdingLEE TSUNG-LIN·Filed 2010·Granted Feb 18, 2014·12 cites·17 claims
- 3491US8445340B2Sacrificial offset protection film for a FinFET deviceLEE TSUNG-LIN·Filed 2009·Granted May 21, 2013·21 cites·20 claims
- 3590US10991811B2Structure and formation method of semiconductor device structure with nanowiresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 27, 2021·4 cites·20 claims
- 3690US10522409B2Fin field effect transistor (FinFET) device structure with dummy fin structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 31, 2019·5 cites·20 claims
- 3790US10062782B2Method of manufacturing a semiconductor device with multilayered channel structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 28, 2018·5 cites·20 claims
- 3890US9257344B2FinFETs with different fin height and EPI height settingTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Feb 9, 2016·5 cites·20 claims
- 3989US12356674B2Method for fabricating a strained structure and structure formedTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 4089US12040383B2Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 16, 2024·1 cites·20 claims
- 4189US10861969B2Method of forming FinFET structure with reduced Fin bucklingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·3 cites·20 claims
- 4289US8878308B2Multi-fin device by self-aligned castle fin formationTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Nov 4, 2014·8 cites·20 claims
- 4388US11031320B2Structures and methods for reducing process charging damagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 8, 2021·3 cites·20 claims
- 4488US9721829B2FinFETs with different fin height and EPI height settingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 1, 2017·4 cites·20 claims
- 4588US8846465B2Integrated circuit with multi recessed shallow trench isolationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 30, 2014·8 cites·20 claims
- 4687US11688666B2Structures and methods for reducing process charging damagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 27, 2023·1 cites·20 claims
- 4787US11411107B2FinFET structure and method with reduced fin bucklingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 9, 2022·1 cites·20 claims
- 4887US9419134B2Strain enhancement for FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 16, 2016·5 cites·20 claims
- 4987US8592918B2Forming inter-device STI regions and intra-device STI regions using different dielectric materialsYUAN FENG·Filed 2010·Granted Nov 26, 2013·8 cites·20 claims
- 5086US12302611B2FinFET structure with a composite stress layer and reduced fin bucklingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
Showing the top 50 of 162 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →