Inventor · disambiguated record
Tzyh-Cheang Lee
Also filed as: LEE TZYH-CHEANG
35 granted patents·9 pending applications·431 citations·filing 2001–2015
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG25LEE TZYH-CHEANG9UNITED MICROELECTRONICS CORP6LIANG CHUN SHENG1TAIWAN SEMICONDUCTOR MFG CO LTD1
Top patents by PatentIndex Score
44 records- 0197US7176084B2Self-aligned conductive spacer process for sidewall control gate of high-speed random access memoryTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Feb 13, 2007·66 cites·18 claims
- 0295US7482236B2Structure and method for a sidewall SONOS memory deviceTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jan 27, 2009·39 cites·20 claims
- 0393US7579612B2Resistive memory device having enhanced resist ratio and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Aug 25, 2009·34 cites·14 claims
- 0493US6436787B1Method of forming crown-type MIM capacitor integrated with the CU damascene processTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Aug 20, 2002·75 cites·29 claims
- 0588US7893420B2Phase change memory with various grain sizesTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Feb 22, 2011·13 cites·16 claims
- 0687US9190610B2Methods of forming phase change memory with various grain sizesTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 17, 2015·4 cites·20 claims
- 0785US6878988B1Non-volatile memory with induced bit linesUNITED MICROELECTRONICS CORP·Filed 2004·Granted Apr 12, 2005·41 cites·9 claims
- 0885US6426250B1High density stacked MIM capacitor structureTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jul 30, 2002·35 cites·17 claims
- 0984US6559493B2High density stacked mim capacitor structureTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted May 6, 2003·30 cites·7 claims
- 1083US7705424B2Phase change memoryTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Apr 27, 2010·13 cites·20 claims
- 1181US7573095B2Memory cells with improved program/erase windowsTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Aug 11, 2009·9 cites·13 claims
- 1280US8618524B2Phase change memory with various grain sizesLIANG CHUN-SHENG·Filed 2011·Granted Dec 31, 2013·4 cites·18 claims
- 1379US8154003B2Resistive non-volatile memory deviceLEE TZYH-CHEANG·Filed 2007·Granted Apr 10, 2012·9 cites·14 claims
- 1478US7485533B2Fabrication method of an non-volatile memoryUNITED MICROELECTRONICS CORP·Filed 2006·Granted Feb 3, 2009·6 cites·14 claims
- 1576US7123518B2Memory deviceUNITED MICROELECTRONICS CROP·Filed 2004·Granted Oct 17, 2006·18 cites·15 claims
- 1674US9006826B2Butted contact shape to improve SRAM leakage currentLEE TZYH-CHEANG·Filed 2012·Granted Apr 14, 2015·3 cites·16 claims
- 1773US7482231B2Manufacturing of memory array and peripheryTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jan 27, 2009·5 cites·20 claims
- 1872US9112144B2Method of fabricating a resistive non-volatile memory deviceLEE TZYH-CHEANG·Filed 2012·Granted Aug 18, 2015·2 cites·20 claims
- 1972US7989920B2Phase change memoryTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Aug 2, 2011·4 cites·20 claims
- 2068US7193265B2Single-poly EEPROMUNITED MICROELECTRONICS CORP·Filed 2005·Granted Mar 20, 2007·4 cites·16 claims
- 2167US7714376B2Non-volatile memory device with polysilicon spacer and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted May 11, 2010·3 cites·13 claims
- 2267US7538384B2Non-volatile memory array structureTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted May 26, 2009·3 cites·20 claims
- 2366US7405119B2Structure and method for a sidewall SONOS memory deviceTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jul 29, 2008·3 cites·20 claims
- 2465US9337205B2Butted contact shape to improve SRAM leakage currentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 10, 2016·1 cites·18 claims
- 2563US7663134B2Memory array with a selector connected to multiple resistive cellsTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Feb 16, 2010·4 cites·19 claims
- 2659US7488645B2Method of fabricating a non-volatile memoryUNITED MICROELECTRONICS CORP·Filed 2005·Granted Feb 10, 2009·1 cites·10 claims
- 2758US7541639B2Memory device and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Jun 2, 2009·1 cites·15 claims
- 2851US8653576B2Method of fabricating a SONOS gate structure with dual-thickness oxideLEE TZYH-CHEANG·Filed 2009·Granted Feb 18, 2014·0 cites·8 claims
- 2950US7485919B2Non-volatile memoryUNITED MICROELECTRONICS CORP·Filed 2007·Granted Feb 3, 2009·0 cites·10 claims
- 3050US2008020529A1Non-volatile memory and fabrication thereofLEE TZYH-CHEANG·Filed 2007·Application pending·0 cites
- 3147US2009230375A1Phase Change Memory DeviceTAIWAN SEMICONDUCTOR MFG·Filed 2008·Application pending·0 cites
- 3246US2007096200A1Self-aligned conductive spacer process for sidewall control gate of high-speed random access memoryLEE TZYH-CHEANG·Filed 2006·Application pending·0 cites
- 3346US2007045722A1Non-volatile memory and fabrication thereofLEE TZYH-CHEANG·Filed 2005·Application pending·0 cites
- 3445US7732310B2Sidewall memory with self-aligned asymmetrical source and drain configurationTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jun 8, 2010·0 cites·19 claims
- 3545US7642170B2Phase change memory cell with roundless micro-trenchesTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Jan 5, 2010·0 cites·20 claims
- 3645US2007075385A1Sidewall SONOS gate structure with dual-thickness oxide and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG·Filed 2005·Application pending·0 cites
- 3743US2006234453A1Non-volatile memory and fabrication method thereofLEE TZYH-CHEANG·Filed 2005·Application pending·0 cites
- 3842US7355236B2Non-volatile floating gate memory cells with polysilicon storage dots and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Apr 8, 2008·0 cites·5 claims
- 3940US7847335B2Non-volatile memory device having a generally L-shaped cross-section sidewall SONOSTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Dec 7, 2010·0 cites·10 claims
- 4040US2007291526A1Structure for a non-volatile memory deviceTAIWAN SEMICONDUCTOR MFG·Filed 2006·Application pending·0 cites
- 4139US8173990B2Memory array with a selector connected to multiple resistive cellsLEE TZYH-CHEANG·Filed 2010·Granted May 8, 2012·0 cites·10 claims
- 4236US2005132549A1Method for making metal capacitors with low leakage currents for mixed-signal devicesFiled 2004·Application pending·0 cites
- 4335US7075830B2Method for programming single-bit storage SONOS type memoryUNITED MICROELECTRONICS CORP·Filed 2004·Granted Jul 11, 2006·1 cites·6 claims
- 4435US2003096473A1Method for making metal capacitors with low leakage currents for mixed-signal devicesTAIWAN SEMICONDUCTOR MFG·Filed 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →