Inventor · disambiguated record
Xinyu Bao
Also filed as: BAO XINYU
69 granted patents·52 pending applications·124 citations·filing 2007–2025
98Inventor score
Top patents by PatentIndex Score
121 records- 0198US11968844B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 23, 2024·2 cites·20 claims
- 0297US9923081B1Selective process for source and drain formationAPPLIED MATERIALS INC·Filed 2017·Granted Mar 20, 2018·23 cites·20 claims
- 0393US11842946B2Semiconductor package having an encapsulant comprising conductive fillers and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 12, 2023·2 cites·20 claims
- 0492US11342380B2Memory devices with selector layer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·2 cites·20 claims
- 0592US10204781B1Methods for bottom up fin structure formationAPPLIED MATERIALS INC·Filed 2018·Granted Feb 12, 2019·6 cites·20 claims
- 0692US10090147B2Integrated system and method for source/drain engineeringAPPLIED MATERIALS INC·Filed 2018·Granted Oct 2, 2018·6 cites·19 claims
- 0792US8603898B2Method for forming group III/V conformal layers on silicon substratesBAO XINYU·Filed 2012·Granted Dec 10, 2013·19 cites·20 claims
- 0891US8932940B2Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabricationWANG DELI·Filed 2009·Granted Jan 13, 2015·22 cites·22 claims
- 0990US11349462B1Selector-based random number generator and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 31, 2022·2 cites·20 claims
- 1090US10043667B2Integrated method for wafer outgassing reductionAPPLIED MATERIALS INC·Filed 2017·Granted Aug 7, 2018·3 cites·19 claims
- 1187US12232331B2Memory devices with selector layer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·0 cites·20 claims
- 1286US12324165B2Methods of writing and forming memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 3, 2025·0 cites·20 claims
- 1386US10205002B2Method of epitaxial growth shape control for CMOS applicationsAPPLIED MATERIALS INC·Filed 2017·Granted Feb 12, 2019·4 cites·19 claims
- 1485US9905412B2Method and solution for cleaning InGaAs (or III-V) substratesAPPLIED MATERIALS INC·Filed 2016·Granted Feb 27, 2018·2 cites·20 claims
- 1584US12302765B2Memory devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 13, 2025·0 cites·20 claims
- 1683US9159554B2Structure and method of forming metamorphic heteroepi materials and III-V channel structures on siAPPLIED MATERIALS INC·Filed 2014·Granted Oct 13, 2015·5 cites·17 claims
- 1783US2025356897A1Circuit with logical function of computing-in-memory, memory device, and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1882US12114512B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 8, 2024·0 cites·20 claims
- 1982US12035542B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 9, 2024·0 cites·20 claims
- 2082US10002759B2Method of forming structures with V shaped bottom on silicon substrateAPPLIED MATERIALS INC·Filed 2017·Granted Jun 19, 2018·3 cites·19 claims
- 2182US2024373651A1Method of manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2281US10269647B2Self-aligned EPI contact flowAPPLIED MATERIALS INC·Filed 2017·Granted Apr 23, 2019·3 cites·20 claims
- 2381US2025279138A1First fire operation for ovonic threshold switch selectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2480US12261095B2Semiconductor package having an encapulant comprising conductive fillers and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 25, 2025·0 cites·20 claims
- 2580US10276688B2Selective process for source and drain formationAPPLIED MATERIALS INC·Filed 2018·Granted Apr 30, 2019·2 cites·18 claims
- 2679US11805662B2Memory devices with selector layer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 31, 2023·0 cites·20 claims
- 2779US10115607B2Method and apparatus for wafer outgassing controlAPPLIED MATERIALS INC·Filed 2016·Granted Oct 30, 2018·2 cites·20 claims
- 2878US8426224B2Nanowire array-based light emitting diodes and lasersWANG DELI·Filed 2007·Granted Apr 23, 2013·9 cites·22 claims
- 2978US2025255200A1Memory devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3077US12514128B2Magnetic memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 30, 2025·0 cites·20 claims
- 3177US12334147B2First fire operation for ovonic threshold switch selectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
- 3277US10236190B2Method for wafer outgassing controlAPPLIED MATERIALS INC·Filed 2017·Granted Mar 19, 2019·2 cites·17 claims
- 3376US2025357144A1Semiconductor structure with thermal dissipation layer and method of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3476US2025159903A1Memory devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3576US2025357255A1Integrated circuit (ic) structures with thermal componentsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3676US2025351380A1Memory selectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3775US2025349651A1Integrated circuit (ic) structures with thermal vias and heat spreader layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3875US2025336762A1Integrated circuit device with thermoelectric coolingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3974US11944019B2Memory devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 26, 2024·0 cites·20 claims
- 4074US2025336764A1Passive thermal control layer for integrated deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4173US12400710B2Memory selector threshold voltage recoveryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 26, 2025·0 cites·20 claims
- 4273US9653291B2Method for removing native oxide and residue from a III-V group containing surfaceAPPLIED MATERIALS INC·Filed 2014·Granted May 16, 2017·2 cites·2 claims
- 4373US2025210452A1Semiconductor package having an encapulant comprising conductive fillers and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4472US12342548B2Memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 24, 2025·0 cites·20 claims
- 4572US11805661B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 31, 2023·0 cites·20 claims
- 4672US2025301664A1Ovonic threshold switch selector and memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4771US12451332B2Atomic layer treatment process using metastable activated radical speciesLAM RES CORP·Filed 2019·Granted Oct 21, 2025·1 cites·9 claims
- 4871US10243063B2Method of uniform channel formationAPPLIED MATERIALS INC·Filed 2017·Granted Mar 26, 2019·1 cites·15 claims
- 4971US2025140642A1Integrated circuit device with thermoelectric coolingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 5071US2025095730A1Memory circuit and method for reading memory circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
Showing the top 50 of 121 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Xinyu Bao files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →