Inventor · disambiguated record
Xianmin Tang
Also filed as: TANG XIANMIN
98 granted patents·71 pending applications·535 citations·filing 2002–2025
99Inventor score
Top patents by PatentIndex Score
169 records- 0198US9460959B1Methods for pre-cleaning conductive interconnect structuresAPPLIED MATERIALS INC·Filed 2015·Granted Oct 4, 2016·113 cites·18 claims
- 0297US11915918B2Cleaning of sin with CCP plasma or RPS cleanAPPLIED MATERIALS INC·Filed 2021·Granted Feb 27, 2024·4 cites·8 claims
- 0397US7253109B2Method of depositing a tantalum nitride/tantalum diffusion barrier layer systemAPPLIED MATERIALS INC·Filed 2005·Granted Aug 7, 2007·44 cites·67 claims
- 0495US11810770B2Methods and apparatus for controlling ion fraction in physical vapor deposition processesAPPLIED MATERIALS INC·Filed 2021·Granted Nov 7, 2023·2 cites·20 claims
- 0594US8895450B2Low resistivity tungsten PVD with enhanced ionization and RF power couplingAPPLIED MATERIALS INC·Filed 2013·Granted Nov 25, 2014·16 cites·13 claims
- 0694US8558299B2Semiconductor device with gate electrode stack including low resistivity tungsten and method of formingCAO YONG·Filed 2011·Granted Oct 15, 2013·26 cites·4 claims
- 0793US12211743B2Method of forming a metal liner for interconnect structuresAPPLIED MATERIALS INC·Filed 2021·Granted Jan 28, 2025·3 cites·17 claims
- 0893US7504006B2Self-ionized and capacitively-coupled plasma for sputtering and resputteringAPPLIED MATERIALS INC·Filed 2003·Granted Mar 17, 2009·49 cites·45 claims
- 0992US11764157B2Ruthenium liner and cap for back-end-of-line applicationsAPPLIED MATERIALS INC·Filed 2021·Granted Sep 19, 2023·2 cites·6 claims
- 1092US8668816B2Self-ionized and inductively-coupled plasma for sputtering and resputteringDING PEIJUN·Filed 2007·Granted Mar 11, 2014·19 cites·16 claims
- 1191US7569125B2Shields usable with an inductively coupled plasma reactorAPPLIED MATERIALS INC·Filed 2005·Granted Aug 4, 2009·16 cites·17 claims
- 1291US6911124B2Method of depositing a TaN seed layerAPPLIED MATERIALS INC·Filed 2002·Granted Jun 28, 2005·52 cites·26 claims
- 1390US8637390B2Metal gate structures and methods for forming thereofGANGULI SESHADRI·Filed 2011·Granted Jan 28, 2014·12 cites·13 claims
- 1490US8133368B2Encapsulated sputtering targetHAWRYLCHAK LARA·Filed 2008·Granted Mar 13, 2012·14 cites·24 claims
- 1589US11562909B2Directional selective junction clean with field polymer protectionsAPPLIED MATERIALS INC·Filed 2020·Granted Jan 24, 2023·2 cites·8 claims
- 1688US9062372B2Self-ionized and capacitively-coupled plasma for sputtering and resputteringGOPALRAJA PRABURAM·Filed 2007·Granted Jun 23, 2015·13 cites·10 claims
- 1787US11037768B2Methods and apparatus for controlling ion fraction in physical vapor deposition processesAPPLIED MATERIALS INC·Filed 2017·Granted Jun 15, 2021·4 cites·8 claims
- 1887US10043670B2Systems and methods for low resistivity physical vapor deposition of a tungsten filmAPPLIED MATERIALS INC·Filed 2015·Granted Aug 7, 2018·4 cites·11 claims
- 1987US8435392B2Encapsulated sputtering targetHAWRYLCHAK LARA·Filed 2012·Granted May 7, 2013·4 cites·20 claims
- 2087US7041201B2Sidewall magnet improving uniformity of inductively coupled plasma and shields used therewithAPPLIED MATERIALS INC·Filed 2003·Granted May 9, 2006·31 cites·18 claims
- 2186US10763090B2High pressure RF-DC sputtering and methods to improve film uniformity and step-coverage of this processAPPLIED MATERIALS INC·Filed 2016·Granted Sep 1, 2020·3 cites·19 claims
- 2286US10047430B2Self-ionized and inductively-coupled plasma for sputtering and resputteringAPPLIED MATERIALS INC·Filed 2014·Granted Aug 14, 2018·5 cites·22 claims
- 2386US9633824B2Target for PVD sputtering systemAPPLIED MATERIALS INC·Filed 2013·Granted Apr 25, 2017·7 cites·18 claims
- 2485US11270911B2Doping of metal barrier layersAPPLIED MATERIALS INC·Filed 2020·Granted Mar 8, 2022·2 cites·20 claims
- 2585US10157787B2Method and apparatus for depositing cobalt in a featureAPPLIED MATERIALS INC·Filed 2016·Granted Dec 18, 2018·4 cites·5 claims
- 2684US11114320B2Processing system and method of forming a contactAPPLIED MATERIALS INC·Filed 2019·Granted Sep 7, 2021·3 cites·19 claims
- 2784US9396933B2PVD buffer layers for LED fabricationZHU MINGWEI·Filed 2013·Granted Jul 19, 2016·6 cites·7 claims
- 2883US7687909B2Metal / metal nitride barrier layer for semiconductor device applicationsAPPLIED MATERIALS INC·Filed 2007·Granted Mar 30, 2010·7 cites·13 claims
- 2982US12094699B2Methods and apparatus for controlling ion fraction in physical vapor deposition processesAPPLIED MATERIALS INC·Filed 2023·Granted Sep 17, 2024·0 cites·20 claims
- 3082US10563304B2Methods and apparatus for dynamically treating atomic layer deposition films in physical vapor deposition chambersAPPLIED MATERIALS INC·Filed 2017·Granted Feb 18, 2020·1 cites·19 claims
- 3180US11410881B2Impurity removal in doped ALD tantalum nitrideAPPLIED MATERIALS INC·Filed 2020·Granted Aug 9, 2022·1 cites·20 claims
- 3278US10109520B2Methods for depositing dielectric barrier layers and aluminum containing etch stop layersAPPLIED MATERIALS INC·Filed 2016·Granted Oct 23, 2018·2 cites·14 claims
- 3378US10096725B2Method for graded anti-reflective coatings by physical vapor depositionAPPLIED MATERIALS INC·Filed 2014·Granted Oct 9, 2018·1 cites·14 claims
- 3478US9834840B2Process kit shield for improved particle reductionRASHEED MUHAMMAD·Filed 2011·Granted Dec 5, 2017·1 cites·12 claims
- 3577US10388532B2Methods and devices using PVD rutheniumAPPLIED MATERIALS INC·Filed 2017·Granted Aug 20, 2019·2 cites·20 claims
- 3677US9499901B2High density TiN RF/DC PVD deposition with stress tuningAPPLIED MATERIALS INC·Filed 2013·Granted Nov 22, 2016·1 cites·10 claims
- 3777US8696875B2Self-ionized and inductively-coupled plasma for sputtering and resputteringDING PEIJUN·Filed 2002·Granted Apr 15, 2014·15 cites·61 claims
- 3876US9984976B2Interconnect structures and methods of formationAPPLIED MATERIALS INC·Filed 2016·Granted May 29, 2018·2 cites·18 claims
- 3976US9953813B2Methods and apparatus for improved metal ion filteringAPPLIED MATERIALS INC·Filed 2015·Granted Apr 24, 2018·2 cites·20 claims
- 4076US9633839B2Methods for depositing dielectric films via physical vapor deposition processesAPPLIED MATERIALS INC·Filed 2015·Granted Apr 25, 2017·2 cites·19 claims
- 4176US8129280B2Substrate device having a tuned work function and methods of forming thereofWANG RONGJUN·Filed 2009·Granted Mar 6, 2012·7 cites·17 claims
- 4275US10109481B2Aluminum-nitride buffer and active layers by physical vapor depositionAPPLIED MATERIALS INC·Filed 2013·Granted Oct 23, 2018·3 cites·16 claims
- 4374US12406849B2Methods and apparatus for enhancing selectivity of titanium and titanium silicides during chemical vapor depositionAPPLIED MATERIALS INC·Filed 2022·Granted Sep 2, 2025·0 cites·20 claims
- 4474US10734235B2Systems and methods for low resistivity physical vapor deposition of a tungsten filmAPPLIED MATERIALS INC·Filed 2018·Granted Aug 4, 2020·1 cites·7 claims
- 4574US9017533B2Apparatus for controlling radial distribution of plasma ion density and ion energy at a workpiece surface by multi-frequency RF impedance tuningFORSTER JOHN C·Filed 2008·Granted Apr 28, 2015·3 cites·20 claims
- 4674US7659204B2Oxidized barrier layerAPPLIED MATERIALS INC·Filed 2007·Granted Feb 9, 2010·4 cites·11 claims
- 4774US2025112090A1Method Of Forming A Metal Liner For Interconnect StructuresAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 4872US10815561B2Method and apparatus for asymmetric selective physical vapor depositionAPPLIED MATERIALS INC·Filed 2019·Granted Oct 27, 2020·1 cites·20 claims
- 4972US2024183028A1Methods and apparatus for precleaning and treating wafer surfacesAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 5071US12243774B2Impurity removal in doped ALD tantalum nitrideAPPLIED MATERIALS INC·Filed 2022·Granted Mar 4, 2025·0 cites·20 claims
Showing the top 50 of 169 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →