US10157850B1ActiveUtility
Semiconductor packages and manufacturing method thereof
Assignee: TAIWAN SEMICONDUCTOR MFG CO LTDPriority: Jul 28, 2017Filed: Jul 28, 2017Granted: Dec 18, 2018
Est. expiryJul 28, 2037(~11 yrs left)· nominal 20-yr term from priority
H10W 74/142H10W 90/722H10W 70/60H10W 90/28H10W 72/884H10W 90/754H10W 72/9413H10W 90/00H10W 70/09H10W 72/241H10W 90/732H10W 70/093H10P 72/743H10P 72/74H10W 74/019H10W 90/701H10W 74/117H10W 74/016H10W 70/685H10W 70/611H10W 70/65H10W 70/05H10W 70/614H01L 2225/1058H01L 21/4853H01L 23/3128H01L 21/4857H01L 23/5383H01L 21/565H01L 25/50H01L 23/5389H01L 2225/1035H01L 25/105H01L 23/5386
81
PatentIndex Score
3
Cited by
12
References
20
Claims
Abstract
A semiconductor package and a manufacturing method for the semiconductor package are provided. The semiconductor package has at least one die, conductive balls, and a molding compound. The at least one die and conductive balls are molded in a molding compound. Each of the conductive balls has a planar end portion and a non-planar end portion opposite to the planar end portion. A surface of the planar end portion of each of the conductive balls is substantially coplanar and levelled with a surface of the molding compound and a surface of the at least one die, and the non-planar end portion of each of the conductive balls protrudes from the molding compound.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1. A semiconductor package, comprising:
a molding compound; and
at least one die and conductive balls molded in the molding compound, wherein a backside surface of the least one die is exposed,
wherein each of the conductive balls has a planar end portion and a non-planar end portion opposite to the planar end portion,
wherein a surface of the planar end portion of each of the conductive balls is substantially coplanar and levelled with a surface of the molding compound and a surface of the at least one die, and the non-planar end portion of each of the conductive balls protrudes from the molding compound.
2. The semiconductor package as claimed in claim 1 , wherein a height of the conductive balls is greater than a thickness of the at least one die.
3. The semiconductor package as claimed in claim 1 , further comprising:
a redistribution layer, disposed on the molding compound and electrically connected to the at least one die and the conductive balls; and
conductive elements, connected to the redistribution layer, wherein the redistribution layer is located between the molding compound and the conductive elements.
4. The semiconductor package as claimed in claim 1 , wherein a lateral distance between a sidewall of each of the conductive balls and a symmetric axis of the conductive balls varies along a direction of the symmetric axis.
5. The semiconductor package as claimed in claim 1 , further comprising a semiconductor sub-package disposed on the non-planar end portion of the conductive balls and electrically connected to the redistribution layer through the conductive balls.
6. A semiconductor package, comprising:
a molding compound;
at least one die embedded in the molding compound;
conductive balls disposed aside of the at least one die and wrapped by the molding compound, wherein a non-planar portion of each of the conductive balls protrudes from a first side of the molding compound, and the non-planar portion has a convex surface relative to the first side of the molding compound;
a redistribution layer disposed on a second side of the molding compound and electrically connected to the at least one die and the conductive balls, wherein the first side and the second side are opposite sides of the molding compound; and
a semiconductor sub-package having connectors and electrically connected to the at least one die, wherein the connectors of the semiconductor sub-package are disposed on the non-planar portions of the conductive balls.
7. The semiconductor package as claimed in claim 6 , wherein each of the conductive balls comprises a planar portion opposite to the non-planar portion, and the planar portion of each of the conductive balls and the second side of the molding compound are levelled with each other.
8. The semiconductor package as claimed in claim 6 , wherein a height of the conductive balls is greater than a thickness of the at least one die.
9. The semiconductor package as claimed in claim 6 , wherein a lateral distance between a sidewall of each of the conductive balls and a symmetric axis of the conductive balls varies along a direction of the symmetric axis.
10. The semiconductor package as claimed in claim 6 , wherein the semiconductor sub-package is electrically connected to the redistribution layer through the conductive balls and the connectors.
11. A manufacturing method for a semiconductor package, comprising:
disposing conductive balls on a carrier having an adhesive layer disposed thereon;
pressing the conductive balls into the adhesive layer, wherein the conductive balls penetrate through the adhesive layer;
disposing at least one die on the adhesive layer;
encapsulating the conductive balls and the at least one die in a molding compound;
planarizing the molding compound and removing a portion of each of the conductive balls; and
removing the adhesive layer and exposing another portion of each of the conductive balls and a backside surface of the at least one die from the molding compound, wherein the another portion protrudes out of the molding compound and has a curved surface.
12. The method as claimed in claim 11 , after planarizing the molding compound, further comprising:
forming a redistribution layer on the molding compound, on the conductive balls, and on the at least one die; and
disposing conductive elements on the redistribution layer.
13. The method as claimed in claim 11 , after removing the adhesive layer, further comprising:
providing at least one semiconductor sub-package; and
disposing the at least one semiconductor sub-package onto the conductive balls.
14. The method as claimed in claim 13 , wherein the at least one semiconductor sub-package comprises connectors, and the at least one semiconductor sub-package is electrically connected to the at least one die by directly contacting the connectors and the exposed portions of the conductive balls.
15. The method as claimed in claim 11 , wherein disposing the conductive balls on the carrier comprises:
providing a supporting element having a frame thereon, wherein the frame has a plurality of first openings, wherein a size of the first openings is less than or equal to a diameter of the conductive balls;
placing the conductive balls at the first openings, respectively;
placing the carrier over the conductive balls, wherein the adhesive layer contacts the conductive balls and is between the carrier and the conductive balls; and
removing the supporting element from the conductive balls.
16. The method as claimed in claim 15 , wherein the first openings are arranged over a periphery region aside of and surrounding the at least one die.
17. The method as claimed in claim 11 , wherein disposing the conductive balls on the carrier comprises:
providing a frame having a plurality of second openings on the carrier, wherein a size of the second openings is greater than a diameter of the conductive balls;
placing the conductive balls into the second openings, respectively; and
removing the frame from the conductive balls.
18. The method as claimed in claim 17 , wherein the second openings are arranged over a periphery region aside of and surrounding the at least one die.
19. The method as claimed in claim 11 , wherein pressing the conductive balls into the adhesive layer further comprises:
performing a thermal treatment, wherein the adhesive layer is adhered onto the conductive balls with a surface profile corresponding to the conductive balls.
20. The method as claimed in claim 11 , wherein planarizing the molding compound and removing a portion of each of the conductive balls comprises performing mechanical grinding or fly cutting.Cited by (0)
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