US10903162B2ActiveUtilityA1

Fuse element resistance enhancement by laser anneal and ion implantation

55
Assignee: IBMPriority: Mar 5, 2019Filed: Mar 5, 2019Granted: Jan 26, 2021
Est. expiryMar 5, 2039(~12.7 yrs left)· nominal 20-yr term from priority
H10P 14/6542H10P 36/00H10P 32/30H10P 95/00H10W 20/493H01H 85/153H01H 69/02H01L 21/02354H01L 23/5256
55
PatentIndex Score
0
Cited by
25
References
9
Claims

Abstract

A method for fabricating an electronic fuse includes forming a recess within a film material to define opposed contact segments and a central fuse segment interconnecting the contact segments and altering the material of the central fuse segment of the film material to increase electrical resistance characteristics of the central fuse segment. The central fuse segment may include defects such as voids created by directing a laser at the central fuse segment as a component of a laser annealing process. Alternatively, and or additionally, the central fuse segment may include dopants implementing via an ion implantation process to increase resistance characteristics of the central fuse segment.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. A method for fabricating an electronic fuse, comprising:
 forming a recess within a film material to define opposed contact segments and a central fuse segment interconnecting the opposed contact segments; and 
 altering material of the central fuse segment of the film material to increase electrical resistance characteristics of the central fuse segment. 
 
     
     
       2. The method of  claim 1 , wherein the film material is copper. 
     
     
       3. The method of  claim 2 , wherein forming the recess in the film material includes etching the film material. 
     
     
       4. The method of  claim 3 , wherein altering the material of the central fuse segment includes creating voids within the central fuse segment by directing a laser at the central fuse segment as a component of a laser annealing process. 
     
     
       5. The method of  claim 4 , further including applying a masking material to the contact segments prior to directing the laser. 
     
     
       6. The method of  claim 5 , wherein the masking material includes a laser absorbing material. 
     
     
       7. The method of  claim 6 , wherein the masking material is Rubrene. 
     
     
       8. The method of  claim 6 , further including removing the masking material. 
     
     
       9. The method of  claim 6 , further including removing the masking material by an etching or chemical mechanical polishing process.

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