Multifunctional collimator for contact image sensors

Abstract

Disclosed is a cost-effective method to fabricate a multifunctional collimator structure for contact image sensors to filter ambient infrared light to reduce noises. In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; a plurality of via holes; and a conductive layer, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction.

What is claimed is: 
     
       1. An optical collimator, comprising:
 a dielectric layer; 
 a substrate; 
 a plurality of via holes; and 
 a conductive layer, 
 wherein the dielectric layer is formed over the substrate, wherein each of the plurality of via holes extends through the dielectric layer and the substrate in a vertical direction, 
 wherein the conductive layer is formed over at least one of the following: the first surface of the first dielectric layer and a portion of sidewalls of each of the plurality of via holes, and 
 wherein a first thickness of the dielectric layer is approximately 1.0 micrometer and a second thickness of the substrate is approximately 6 micrometers. 
 
     
     
       2. The optical collimator of  claim 1 , wherein the conductive layer comprises aluminum copper (AlCu) alloy. 
     
     
       3. The optical collimator of  claim 1 , wherein the conductive layer is formed over both the first surface of the first dielectric layer and the portion of sidewalls of each of the plurality of via holes, and wherein a first thickness of the conductive layer over the first surface of the first dielectric layer is approximately 20 nanometers and a second thickness of the conductive layer over the sidewalls of each of the plurality of via holes is approximately 2 nanometers. 
     
     
       4. The collimator of  claim 1 , wherein the conductive layer is formed over the portion of sidewalls of each of the plurality of via holes, and wherein a depth of the portion of sidewalls with the conductive layer is approximately 3,000 nanometers, wherein the first depth is measured from the first surface of the dielectric layer. 
     
     
       5. The collimator of  claim 1 , wherein each of the plurality of via holes has a dimension of approximately 0.05 micrometers. 
     
     
       6. The collimator of  claim 1 , wherein the substrate is a silicon substrate. 
     
     
       7. The collimator of  claim 1 , wherein the conductive layer is configured so as to allow the optical collimator to filter light in a range of wavelengths between 780 and 1400 nanometers. 
     
     
       8. A semiconductor device, comprising:
 at least one optical sensing element; and 
 an optical collimator; 
 wherein the optical collimator comprises: a first dielectric layer, a first substrate, a plurality of via holes, and a conductive layer, wherein the first dielectric layer is formed over the first substrate, wherein each of the plurality of via holes extends through the first dielectric layer and the first substrate, 
 wherein the conductive layer is formed so as to allow the optical collimator to filter light in a range of wavelengths, 
 wherein a first thickness of the dielectric layer is approximately 1.0 micrometer and a second thickness of the substrate is approximately 6 micrometers. 
 
     
     
       9. The semiconductor device of  claim 8 , wherein the at least one optical sensing element is formed in a second substrate, wherein the second substrate is further coated with a second dielectric layer, and wherein the optical collimator is formed over the second dielectric layer. 
     
     
       10. The semiconductor device of  claim 8 , wherein the conductive layer comprises aluminum copper (AlCu) alloy. 
     
     
       11. The semiconductor device of  claim 8 , wherein the conductive layer is formed over both the first surface of the first dielectric layer and a portion of sidewalls of each of the plurality of via holes, and wherein a first thickness of the conductive layer over the first surface of the first dielectric layer is approximately 20 nanometers and a second thickness of the conductive layer over the sidewalls of each of the plurality of via holes is approximately 2 nanometers. 
     
     
       12. The semiconductor device of  claim 8 , wherein the conductive layer is formed over a portion of sidewalls of each of the plurality of via holes, and wherein a first depth of the portion of side walls with the conductive layer is approximately 2 nanometers, wherein the first depth is measured from the first surface of the first dielectric layer. 
     
     
       13. The semiconductor device of  claim 8 , wherein each of the plurality of via holes has a dimension of approximately 0.05 micrometers. 
     
     
       14. The semiconductor device of  claim 8 , wherein the first substrate is a silicon substrate. 
     
     
       15. The semiconductor device of  claim 8 , wherein the range of wavelengths is between 780 and 1400 nanometers. 
     
     
       16. A method for forming a semiconductor device, comprising:
 forming a collimator structure on a first substrate with a first dielectric layer, wherein the collimator structure comprises a plurality of via holes, wherein each of the plurality of via holes extends through the first dielectric layer and the first substrate in a vertical direction; and 
 forming a conductive layer over at least one of the following: the first surface of the first dielectric layer and a portion of sidewalls of each of the plurality of via holes of the collimator structure, 
 wherein a first thickness of the first dielectric layer is approximately 1.0 micrometer and a second thickness of the first substrate is approximately 6 micrometers. 
 
     
     
       17. The method of  claim 16 , wherein the conductive layer comprises aluminum copper (AlCu) alloy. 
     
     
       18. The method of  claim 16 , wherein the conductive layer is formed over both the first surface of the first dielectric layer and the portion of sidewalls of each of the plurality of via holes, and wherein a first thickness of the conductive layer over the first surface of the first dielectric layer is approximately 20 nanometers and a second thickness of the conductive layer over the portion of sidewalls of each of the plurality of via holes is approximately 2 nanometers. 
     
     
       19. The method of  claim 16 , wherein the conductive layer is formed over the portion of sidewalls of each of the plurality of via holes, and wherein a first depth of the portion of side walls with the conductive layer is approximately 3000 nanometers, wherein the first depth is measured from the first surface of the first dielectric layer. 
     
     
       20. The method of  claim 16 , wherein each of the plurality of via holes has a dimension of approximately 0.05 micrometers.