AG alloy bonding wire for semiconductor devices and semiconductor device

Abstract

There is provided an Ag alloy bonding wire for semiconductor devices which exhibits a favorable bond reliability in a high-temperature environment even when using a mold resin of high S content and can suppress a chip damage at the time of ball bonding. The Ag alloy bonding wire is characterized by containing at least one element selected from the group consisting of Pd and Pt (hereinafter referred to as a “first element”) and at least one element selected from the group consisting of P, Cr, Zr and Mo (hereinafter referred to as a “second element”) so as to satisfy 0.05≤x1≤3.0, and 15≤x2≤700 where x1 is a total concentration of the first element [at. %] and x2 is a total concentration of the second element [at. ppm], with the balance including Ag.

The invention claimed is: 
     
         1 . An Ag alloy bonding wire for semiconductor devices,
 comprising at least one first element selected from the group consisting of Pd and Pt and at least one second element selected from the group consisting of P, Cr, Zr and Mo so as to satisfy
   0.05≤x1≤3.0, and
 
   15≤x2≤700
 
   where x1 is a total concentration of the first element by atomic percentage and x2 is a total concentration of the second element by atomic ppm,   with the balance comprising Ag,   wherein the Ag alloy bonding wire comprises at least Cr, Zr or Mo as the second element.   
     
     
         2 . The Ag alloy bonding wire according to  claim 1 , wherein a total concentration of In, Ga, Cd, and Sn is 0 atomic percent or more and less than 0.05 atomic percent. 
     
     
         3 . The Ag alloy bonding wire according to  claim 1 , wherein a total concentration of elements other than the first element, the second element, and Ag is 0 atomic percent or more and less than 0.05 atomic percent. 
     
     
         4 . The Ag alloy bonding wire according to  claim 1 , wherein the concentration of each element is measured by an ICP emission spectrometry or an ICP mass spectrometry. 
     
     
         5 . The Ag alloy bonding wire according to  claim 1 , wherein the Ag alloy bonding wire does not have a coating that contains a metal other than Ag as a main component. 
     
     
         6 . A semiconductor device comprising the Ag alloy bonding wire according to  claim 1 . 
     
     
         7 . The Ag alloy bonding wire according to  claim 1 , further comprising In, Ga, Cd, or Sn, wherein a total concentration of In, Ga, Cd, and Sn is more than 0 atomic percent and less than 0.05 atomic percent. 
     
     
         8 . The Ag alloy bonding wire according to  claim 1 , further comprising In, Ga, Cd, or Sn, wherein a total concentration of In, Ga, Cd, and Sn is more than 0 atomic percent and less than 0.045 atomic percent.