US2007029540A1PendingUtilityA1

Semiconductor device

53
Assignee: KAJIWARA RYOICHIPriority: Jan 28, 1999Filed: Oct 5, 2006Published: Feb 8, 2007
Est. expiryJan 28, 2019(expired)· nominal 20-yr term from priority
Inventors:Ryoichi KajiwaraMasahiro KoizumiToshiaki MoritaKazuya TakahashiMunehisa KishimotoShigeru IshiiToshinori HirashimaYasushi TakahashiToshiyuki HataHiroshi SatoKeiichi Ookawa
H10W 72/5524H10W 72/07653H10W 72/552H10W 74/00H10W 74/127H10W 72/0198H10W 72/877H10W 72/07141H10W 72/29H10W 72/59H10W 72/30H10W 72/07636H10W 72/07337H10W 72/074H10W 72/07336H10W 72/07236H10W 72/073H10W 72/07327H10W 72/07232H10W 72/07233H10W 72/354H10W 72/325H10W 72/352H10W 72/332H10W 72/331H10W 72/381H10W 90/726H10W 72/251H10W 72/252H10W 72/012H10W 72/20H10W 72/01225H10W 90/736H10W 72/631H10W 70/481H10W 70/457H10W 70/424H10W 74/111H10W 74/016H10W 72/071H10W 74/014H05K 3/3426H10W 90/764H10W 74/01H10W 70/465H10W 99/00H10W 90/811H10W 70/40H10W 70/429H10D 30/601
53
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Claims

Abstract

A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

Claims

exact text as granted — not AI-modified
1 . A semiconductor device comprising: 
 a semiconductor substrate; and    a semiconductor element which comprises:    a first electrode provided on a front plane of said semiconductor substrate, and a second electrode provided on a rear plane of said semiconductor substrate;    a first metallic member connected to said first electrode; and    a second metallic member connected to said second electrode; wherein:    said first electrode forms a metallic connection with said first metallic member, formed of a precious metal layer, via a first metallic body containing a first precious metal as a main component,    said second electrode is connected to said second metallic member via a second metallic body containing a second precious metal, and    said precious metal layer is provided on a bonding surface of said first metallic member.    
     
     
         2 . A semiconductor device as claimed in  claim 1 , wherein: 
 a surface portion of said first metallic member for connecting with a circuit board and a surface portion of said second metallic member are positioned at substantially the same level.    
     
     
         3 . A semiconductor device as claimed in  claim 1 , wherein: 
 said first metallic body is a projecting convex electrode terminal protruded from any of said first electrode and said first metallic member.    
     
     
         4 . A semiconductor device as claimed in  claim 1 , wherein: 
 said first metallic body has plural projecting convex electrode terminals which protrude from any of said first electrode and said first metallic member, and    said plural projecting convex electrode terminals are distributed on substantially the whole bonding interface between said first electrode and said first metallic member with substantially the same intervals.    
     
     
         5 . A semiconductor device as claimed in  claim 1 , wherein: 
 a precious metal layer is provided on a bonding surface of said first metallic member.    
     
     
         6 . A semiconductor device as claimed in  claim 1 , wherein: 
 said second metallic body is a metallic layer positioned at the bonding interface between said second electrode and said second metallic member.    
     
     
         7 . A semiconductor device as claimed in  claim 6 , wherein: 
 said metallic layer is composed by bonding a precious metal layer positioned at the bonding front plane of said second electrode with a precious metal layer positioned at the bonding front plane of said second metallic member.    
     
     
         8 . A semiconductor device as claimed in  claim 6 , wherein: 
 said metallic layer is an alloy layer having a solidus line temperature of at least 400° C., and which contains a precious metal as a main component.    
     
     
         9 . A semiconductor device as claimed in  claim 1 , wherein: 
 said first metallic member comprises plural portions extended from a portion having a bonding portion with said first electrode, and    each of said plural portions comprises a surface portion for connecting with an external line.    
     
     
         10 . A semiconductor device as claimed in  claim 3 , further comprising: 
 an insulator for covering said semiconductor element and said first and second metallic members, wherein:    the plane of said first metallic member at a rear of the plane bonded with said first electrode comprises an exposed portion for connecting with a circuit board.    
     
     
         11 . A semiconductor device as claimed in  claim 10 , wherein: 
 said bonded plane of said semiconductor element is a circuit forming plane, and said first electrode is a main current electrode.    
     
     
         12 . A semiconductor device as claimed in  claim 6 , further comprising: 
 an insulator for covering said semiconductor element and said first and second metallic members, wherein:    the plane of said second metallic member at a rear of the plane bonded with said second electrode comprises an exposed portion for connecting with a circuit board.    
     
     
         13 . A semiconductor device comprising: 
 a semiconductor substrate; and    a semiconductor element which comprises:    a first electrode provided on a front plane of said semiconductor substrate, and a second electrode provided on a rear plane of said semiconductor substrate;    a first metallic member connected to said first electrode; and    a second metallic member connected to said second electrode; wherein:    said second electrode is connected to said second metallic member via a metallic layer containing precious metal, and    said metallic layer is an alloy layer having a solidus line temperature of at least 400° C., and which contains a precious metal as a main component.    
     
     
         14 . A semiconductor device comprising: 
 a semiconductor substrate; and    a semiconductor element which comprises:    a first electrode provided on a front plane of said semiconductor substrate, and a second electrode provided on a rear plane of said semiconductor substrate;    a first metallic member connected to said first electrode; and    a second metallic member connected to said second electrode; wherein:    said first metallic member comprises plural portions extended from a portion having a bonding portion with said first electrode; and    each of said plural portions comprises a surface portion for connecting with an external line.    
     
     
         15 . A semiconductor device as claimed  claim 1 , wherein: 
 said second electrode provided on the rear plane of said semiconductor substrate is formed by metalizing said semiconductor substrate after grinding.    
     
     
         16 . A semiconductor device as claimed in  claim 1 , wherein: 
 at least one of said first and second metallic bodies is composed of a solder having a melting point of at least 250° C.    
     
     
         17 . A method for manufacturing said semiconductor device claimed in  claim 1 , wherein: 
 a bonding operation for bonding said first electrode with said first metallic member of said semiconductor is performed simultaneously with or prior to a bonding operation for bonding said second electrode with said second metallic member of said semiconductor.    
     
     
         18 . A semiconductor device comprising: 
 a semiconductor chip, and    a metallic member connected to a chip electrode, wherein:    precious metal particles, having a particle diameter larger than a gap between said chip and said metallic member, and a resin are filled into said gap, and    said precious metal particles, said chip electrode and said metallic member are connected with a metallic connection.    
     
     
         19 . A semiconductor device as claimed in  claim 18 , wherein: 
 each of said precious metal particles, said metallic member, and said electrode; and said precious metal bumps, said metallic member, and said electrode; are bonded metallically to each other.    
     
     
         20 . A semiconductor device as claimed in  claim 1  comprising: 
 a semiconductor chip; and metallic members connected to chip electrodes, wherein:    main mechanical bonding between said metallic members is performed via said chip.    
     
     
         21 . A semiconductor device as claimed in  claim 1  comprising: 
 a semiconductor chip;    metallic members connected to chip electrodes, and resin filled into a gap between said chip and said metallic members, wherein:    said metallic members are manufactured to have any of bumps and dips, and openings, for composing a mechanically bonded structure with said resin.    
     
     
         22 . A semiconductor device as claimed in  claim 3 , wherein: 
 a precious metal layer is provided on a bonding surface of said first metallic member.    
     
     
         23 . A semiconductor device as claimed in  claim 4 , wherein: 
 a precious metal layer is provided on a bonding surface of said first metallic member.

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