Compliant electrical contacts

Abstract

A method of forming compliant electrical contacts includes patterning a conductive layer into an array of compliant members. The array of compliant members is then positioned to be in contact with electrical connection pads on an integrated circuit wafer and the compliant members are joined to the pads. Then, the supporting layer that supported the compliant members is removed to leave the compliant members connected to the pads.

1 . A method of forming a compliant electrical contact, said method comprising: 
 patterning a conductive layer into at least one compliant member supported by a supporting layer;    positioning said compliant member in contact with an electrical connection pad on a device;    joining said compliant member to said pad; and    removing said supporting layer to leave said compliant member connected to said pad.    
     
     
         2 . The method in  claim 1 , wherein said joining of said compliant member comprises: 
 exerting pressure between said supporting member and said device to cause said compliant member to press against said pad; and    heating said compliant member and said device.    
     
     
         3 . The method in  claim 1 , further comprising, prior to said positioning of said compliant member: 
 positioning a metallic paste layer over said pad; and    laser transferring metallic paste to said pad.    
     
     
         4 . The method in  claim 3 , wherein said joining of said compliant member comprises one of reflowing, sintering, and coalescing said metallic paste.  
     
     
         5 . The method in  claim 1 , further comprising forming solder on exposed ends of said compliant member before positioning said compliant member in contact with said pad.  
     
     
         6 . The method in  claim 1 , further comprising shaping said compliant member before positioning said compliant member in contact with said pad.  
     
     
         7 . The method in  claim 1 , further comprising forming an alloy as said conductive layer, in a process utilizing temperatures exceeding that which would damage said device.  
     
     
         8 . The method in  claim 1 , further comprising plating said compliant member using processing that which would damage said integrated circuit device before positioning said compliant member in contact with said pad.  
     
     
         9 . A method of forming a compliant electrical contact, said method comprising: 
 patterning a conductive layer into compliant members supported by a supporting layer;    positioning said compliant members in contact with an electrical connection pad on a device;    joining said compliant members to said pad; and    removing said supporting layer to leave said compliant members connected to said pad.    
     
     
         10 . The method in  claim 9 , wherein said joining of said compliant members comprises: 
 exerting pressure between said supporting member and said device to cause said compliant members to press against said pad; and    heating said compliant members and said device.    
     
     
         11 . The method in  claim 9 , further comprising, prior to said positioning of said compliant members: 
 positioning a metallic paste layer over said pad; and    laser transferring metallic paste to said pad.    
     
     
         12 . The method in  claim 11 , wherein said joining of said compliant members comprises one of reflowing, sintering, and coalescing said metallic paste.  
     
     
         13 . The method in  claim 9 , further comprising forming an alloy as said conductive layer, in a process utilizing temperatures exceeding that which would damage said device.  
     
     
         14 . The method in  claim 9 , further comprising plating said compliant members using processing that which would damage said integrated circuit device before positioning said compliant members in contact with said pad.  
     
     
         15 . A method of forming a compliant electrical contact, said method comprising: 
 patterning a conductive layer comprising a copper alloy into compliant members supported by a supporting layer;    positioning said compliant members in contact with an electrical connection pad on a device;    joining said compliant members to said pad using a copper solder; and    removing said supporting layer to leave said compliant members connected to said pad.    
     
     
         16 . The method in  claim 15 , wherein said joining of said compliant members comprises: 
 exerting pressure between said supporting member and said device to cause said compliant members to press against said pad; and    heating said compliant members and said device.    
     
     
         17 . The method in  claim 15 , further comprising, prior to said positioning of said compliant members: 
 positioning a metallic paste layer over said pad; and    laser transferring metallic paste to said pad.    
     
     
         18 . The method in  claim 17 , wherein said joining of said compliant members comprises one of reflowing, sintering, and coalescing said metallic paste.  
     
     
         19 . The method in  claim 15 , further comprising forming an alloy as said conductive layer, in a process utilizing temperatures exceeding that which would damage said device.  
     
     
         20 . The method in  claim 15 , further comprising plating said compliant members using processing that which would damage said integrated circuit device before positioning said compliant members in contact with said pad.