Method of manufacturing high power light-emitting device package and structure thereof

Abstract

A method of manufacturing high power light-emitting device packages and structure thereof, wherein the method thereof includes the steps of: (a) forming a plurality of lead frames, each of the lead frames includes a heat-dissipating element and a plurality of leads; (b) electroplating an outer surface of the lead frames each; (c) coating conductive gel on a surface of the heat-dissipatings each; (d) arranging at least one light-emitting chip on the conductive gel; (e) forming an encapsulant on each of the lead frames; (f) connecting at least one top electrode of the light-emitting chip with one of the leads; (g) coating silicon gel for covering the at one light-emitting chip, and forming integrally a focusing light convex surface on a top surface of the silicon gel; and (h) cutting off the tie-bars to separate the lead frames from one another, whereby forming a plurality of high power light-emitting device packages.

1 . A structure of a high power light-emitting device package, comprising:
 a lead frame having a heat-dissipating element and a plurality of leads, and each of the leads outwardly extended from one side of the heat-dissipating element;   an electroplating layer formed on an outer surface of the lead frame;   a conductive gel layer coated on a surface of the heat-dissipating element;   at least one light-emitting chip disposed on the conductive gel layer so that one bottom electrode of the at least one light-emitting chip electrically connected with the surface of the heat-dissipating element;   an encapsulant covered on a portion of the heat-dissipating element and a portion of the leads each, a reflector cup integrally formed on the encapsulant and a reflective surface formed on an inner side wall thereof, and the at least one light-emitting chip exposed on a bottom of the reflector cup;   a solder wire electrically connected with one top electrode of the at least one light-emitting chip to one of the leads;   a silver epoxy layer formed on a connection of the solder wire and the one top electrode of the at least one light-emitting chip, and on a connection of the solder wire and the one of the leads;   a silicon gel layer formed inside the reflector cup for covering at least one light-emitting chip and the solder wire; and   a lens disposed on a top of the reflector cup and connected with the silicon gel layer, whereby forming a high power light-emitting device package.   
   
   
       2 . The structure of the high power light-emitting device package as claimed in  claim 1 , further comprising a reflective layer formed on the reflective surface. 
   
   
       3 . A structure of a high power light-emitting device package, comprising:
 a lead frame having a heat-dissipating element and a plurality of leads, and each of the leads outwardly extended from one side of the heat-dissipating element;   an electroplating layer formed on an outer surface of the lead frame;   a conductive gel layer coated on a surface of the heat-dissipating element;   at least one light-emitting chip disposed on the conductive gel layer so that one bottom electrode of the at least one light-emitting chip electrically connected with the surface of the heat-dissipating element;   an encapsulant covered on a portion of the heat-dissipating element and a portion of the leads each, a reflector cup integrally formed on the encapsulant and a reflective surface formed on an inner side wall thereof, and the at least one light-emitting chip exposed on a bottom of the reflector cup;   a solder wire electrically connected with one top electrode of the at least one light-emitting chip to one of the leads;   a silver epoxy layer formed on a connection of the solder wire and the one top electrode of the at least one light-emitting chip, and on a connection of the solder wire and the one of the leads; and   a silicon gel layer formed inside the reflector cup for covering at least one light-emitting chip and the solder wire, whereby forming a high power light-emitting device package.   
   
   
       4 . The structure of the high power light-emitting device package as claimed in  claim 3 , further comprising a reflective layer formed on the reflective surface. 
   
   
       5 . The structure of the high power light-emitting device package as claimed in  claim 3 , wherein a focusing light convex surface further integrally formed on a top surface of the silicon gel layer. 
   
   
       6 . A structure of a high power light-emitting device package, comprising:
 a lead frame having a heat-dissipating element and a plurality of leads, and each of the leads outwardly extended from one side of the heat-dissipating element;   an encapsulant covered on a portion of the heat-dissipating element and a portion of the leads each, a reflector cup integrally formed on the encapsulant and a reflective surface formed on an inner side wall thereof, and a partial surface of the heat-dissipating element and a partial surface of the leads each exposed on a bottom of the reflector cups each;   an electroplating layer formed on an outer surface of the lead frames each uncovered by the encapsulant;   a conductive gel layer coated on the bottom of the reflector cup;   at least one light-emitting chip disposed on the conductive gel layer so that one bottom electrode of the at least one light-emitting chip electrically connected with a surface of the heat-dissipating element;   a solder wire electrically connected with one top electrode of the at least one light-emitting chip to one of the leads;   a silver epoxy layer formed on a connection of the solder wire and the one top electrodes of the at least one light-emitting chip, and on a connection of the solder wire and the one of the leads;   a silicon gel layer formed inside the reflector cup for covering at least one light-emitting chip and the solder wire; and   a lens disposed on a top of the reflector cup and connected with the silicon gel layer, whereby forming a high power light-emitting device package.   
   
   
       7 . The structure of the high power light-emitting device package as claimed in  claim 6 , further comprising a reflective layer formed on the reflective surface. 
   
   
       8 . A structure of a high power light-emitting device package, comprising:
 a lead frame having a heat-dissipating element and a plurality of leads, and each of the leads outwardly extended from one side of the heat-dissipating element;   an encapsulant covered on a portion of the heat-dissipating element and a portion of the leads each, a reflector cup integrally formed on the encapsulant and a reflective surface formed on an inner side wall thereof, and a partial surface of the heat-dissipating element and a partial surface of the leads each exposed on a bottom of the reflector cups each;   an electroplating layer formed on an outer surface of the lead frames each uncovered by the encapsulant;   a conductive gel layer coated on the bottom of the reflector cup;   at least one light-emitting chip disposed on the conductive gel layer so that one bottom electrode of the at least one light-emitting chip electrically connected with a surface of the heat-dissipating element;   a solder wire electrically connected with one top electrode of the at least one light-emitting chip to one of the leads;   a silver epoxy layer formed on a connection of the solder wire and the one top electrode of the at least one light-emitting chip, and on a connection of the solder wire and the one of the leads; and   a silicon gel layer formed inside the reflector cup for covering at least one light-emitting chip and the solder wire.   
   
   
       9 . The structure of the high power light-emitting device package as claimed in  claim 8 , further comprising a reflective layer formed on the reflective surface. 
   
   
       10 . The structure of the high power light-emitting device package as claimed in  claim 8 , wherein a focusing light convex surface further integrally formed on a top surface of the silicon gel layer.