Connection device and test system

Abstract

To achieve high speed exchange of electrical signals between a connection device and a tester, a support member is provided for supporting the connection device, a plurality of pointed contact terminals are arrayed in an area on the probing side, a multilayer film is provided having a plurality of lead out wires electrically connected to the contact terminals and a ground layer enclosing an insulation layer, and a frame is clamped on the rear side of the multilayer film. A clamping member is provided on the frame to make the multilayer film project out to eliminate slack in the multilayer film. A contact pressure means is provided for making the tips of the contact terminals contact each of the electrodes with predetermined contact pressure from the support member to the clamping member. A compliance mechanism is provided so that the contact terminal group of the tip surface is arrayed in parallel with the electrode group terminal surface, so that the tips of the contact terminals contact the surface of the electrodes with an equal pressure.

1 . A method of producing a semiconductor device, comprising the steps of:
 forming a plurality of semiconductor devices on a wafer;   contacting a plurality of contact terminals to electrodes of said semiconductor devices and   testing electrical characteristics of said semiconductor devices; and   detaching said semiconductor devices from said wafer,   wherein said step of testing electrical characteristics of said semiconductor devices includes   a step of exchanging an electrical signal between said semiconductor devices and a tester circuit through said contact terminals and wires,   wherein the contact terminals are formed by using a wafer with an etched hole as a mold and are made of conductive materials,   wherein said wires and said contact terminals are formed separately and both are electrically connected to form a conductive member,   wherein said conductive member has an insulation layer,   wherein said wires are formed on said insulation layer, and   wherein a ground layer is formed on a reverse side of said wires formed on said insulation layer.   
     
     
         2 . A method of producing a semiconductor device according to  claim 1 ,
 wherein said wires are installed between said ground layer and said contact terminals.   
     
     
         3 . A method of producing a semiconductor device according to  claim 1 ,
 wherein said wires and said contact terminals are electrically connected by a conductive anisotropic sheet or solder or heat expansion of metal.   
     
     
         4 . A method of producing a semiconductor device according to  claim 1 ,
 wherein said semiconductor devices are tested in one batch.   
     
     
         5 . A method of producing a semiconductor device according to  claim 1 ,
 wherein said wires set an impedance by using said ground layer before being electrically connected to said contact terminals.   
     
     
         6 . A method of producing a semiconductor device according to  claim 1 ,
 wherein said wires set an impedance for matching with said tester circuit.   
     
     
         7 . A method of producing a semiconductor device according to  claim 1 ,
 wherein said semiconductor device is tested by exchanging high frequency electrical signals higher than 100 MHz through said wires in which impedance is matched with said tester circuit, and   wherein said contact terminals have a length equal to or less than 0.5 mm and equal to or more than 0.05 mm.   
     
     
         8 . A method of producing a semiconductor device according to  claim 1 ,
 wherein said etched hole of said wafer is formed by anisotropic etching.