US2009215225A1PendingUtilityA1
Tellurium compounds useful for deposition of tellurium containing materials
Est. expiryFeb 24, 2028(~1.6 yrs left)· nominal 20-yr term from priority
Inventors:Matthias StenderChongying XuTianniu ChenWilliam HunksPhilip S. H. ChenJeffrey F. RoederThomas H. Baum
C07C 395/00C07C 333/16C07F 7/10C23C 16/305H10N 70/023
63
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Claims
Abstract
Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM), by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).
Claims
exact text as granted — not AI-modified1 . A tellurium precursor composition, including a tellurium precursor selected from the group consisting of:
(i) Te(IV) organyls having the formula TeR 1 R 2 R 3 R 4 wherein each of R 1 , R 2 , R 3 and R 4 is the same as or different from others, and each is independently selected from H, halogen, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, amide, aminoalkyl, alkylamine, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl; (ii) tellurium bis-amides of the formula Te[NR 2 ] 2 wherein each R is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl; (iii) asymmetric tellurium compounds including one alkyl substituent and a second ligand containing a heteroatom; (iv) tellurium compounds with ethylenediamine ligands; (v) tellurium compounds with dithiocarbamate ligands; (vi) Te(II) and Te(IV) compounds including at least one nitrogen-based ligand selected from among amidinates, guanidinates, isoureates and beta-diketoiminates; and (vii) dialkyl ditellurides wherein alkyl is C 1 -C 8 alkyl.
2 . The tellurium precursor composition of claim 1 , comprising a tellurium precursor is selected from the group consisting of Te[N(t-Bu)(SiMe 3 )] 2 and Te[N(SiMe 3 ) 2 ] 2 .
3 . The tellurium precursor composition of claim 1 , comprising a tellurium precursor selected from the group consisting of:
(a) tellurium precursors of the formula
R 3 TeNR 1 R 2
wherein
each of R 1 , R 2 and R 3 is the same as or different from the other, and each is independently selected from H, halogen, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, amide, aminoalkyl, alkylamine, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl, and wherein R 3 can in addition be amide or halogen;
(b) tellurium amidinate precursors of the formula
wherein each of R 1 , R 2 , R 3 and R 4 is the same as or different from others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl, and wherein R 4 in addition can be amide or halogen;
(c) tellurium guanidinates of the formula
wherein each of R 1 , R 2 , R 3 , R 4 and R 5 is the same as or different from others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl, and wherein R 5 in addition can be amide or halogen;
(d) tellurium dithiocarbamates of the formula
wherein each of R 1 , R 2 and R 3 is the same as or different from others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl, and wherein R 3 in addition can be amide or halogen;
(e) tellurium precursors of the formula:
in a wherein each of R 1 , R 2 , R 3 and R 4 is the same as or different from others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl;
(f) tellurium precursors of the formula:
(g) tellurium precursors of the formula:
wherein M is Te, and each R is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl;
(h) tellurium precursors of the formula:
wherein each R may be the same as or different from the others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl;
(i) tellurium precursors of the formula:
wherein each of R 1 , R 2 , R 3 and R 4 is the same as or different from others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl, and wherein each of R 3 and R 4 can in addition and independently be amide or halogen;
(j) tellurium precursors of the formula:
wherein
each R 1 and R 2 is the same as or different from the others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl;
(k) tellurium precursors of the formula:
wherein each of R 1 , R 2 , R 3 , R 4 and R 5 is the same as or different from others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl, and wherein each of R 3 , R 4 and R 5 can in addition and independently be amide or halogen;
(l) tellurium precursors of the formula:
wherein each of R 1 , R 2 and R 3 is the same as or different from others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl, and wherein R 3 can in addition be amide or halogen;
(m) tellurium precursors of the formula:
wherein
each of R 1 , R 2 and R 3 is the same as or different from others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl, and wherein R 3 can in addition be amide or halogen; and
Z is independently selected from C 1 -C 6 alkoxy, —NR 1 R 2 , H, C 1 -C 6 alkyl, C 3 -C 10 cycloalkyl, and C 6 -C 13 aryl;
(n) tellurium precursors of the formula:
wherein
each of R 1 , R 2 and R 3 is the same as or different from others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl;
Z is independently selected from C 1 -C 6 alkoxy, —NR 1 R 2 , H, C 1 -C 6 alkyl, C 3 -C 10 cycloalkyl, and C 6 -C 13 aryl, and wherein each R 3 can in addition and independently be amide or halogen; and
x is an integer having a value of from 0 to 4, inclusive;
(o) tellurium precursors of the formula:
wherein
each of R 1 , R 2 , R 3 and R 4 is the same as or different from others, and each is independently selected from H, halogen, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, amide, aminoalkyl, alkylamine, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl;
(p) tellurium precursors of the formula:
wherein
each of R 1 , R 2 , R 3 , R 4 , R 5 and R 6 is the same as or different from others, and each is independently selected from H, halogen, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, amide, aminoalkyl, alkylamine, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl; and
(q) tellurium precursors of the formula:
XTeNR 1 R 2
wherein
X is halogen; and
each of R 1 and R 2 is the same as or different from the other, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl.
4 . The tellurium precursor composition of claim 1 , wherein the tellurium precursor comprises N,N′-di-tert-butylenediamide tellurium dichloride.
5 . The tellurium precursor composition of claim 1 , wherein the tellurium precursor comprises Me 2 NHTeCl 2 wherein Me is methyl.
6 . The tellurium precursor composition of claim 1 , wherein the tellurium precursor comprises NHTe(Cl)NMe 2 , wherein Me is methyl.
7 . The tellurium precursor composition of claim 1 , wherein the tellurium precursor comprises Te 2 (t-Bu) 2 wherein t-Bu is tertiary butyl.
8 . The tellurium precursor composition of claim 1 , further comprising a solvent medium in which the tellurium precursor is dissolved.
9 . The tellurium precursor composition of claim 8 , wherein the solvent medium comprises a hydrocarbon solvent including one or more of alkanes, aromatics and amines.
10 . The tellurium precursor composition of claim 8 , wherein the solvent medium comprises one or more of hexane, heptane, octane, and pentane, benzene, toluene, triethylamine, and tert-butylamine.
11 . The tellurium precursor composition of claim 10 , wherein the tellurium precursor is selected from the group consisting of:
(a) tellurium precursors of the formula
R 3 TeNR 1 R 2
wherein
each of R 1 , R 2 and R 3 is the same as or different from the other, and each is independently selected from H, halogen, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, amide, aminoalkyl, alkylamine, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl, and wherein R 3 can in addition be amide or halogen;
(b) tellurium amidinate precursors of the formula
wherein each of R 1 , R 2 , R 3 and R 4 is the same as or different from others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl, and wherein R 4 in addition can be amide or halogen;
(c) tellurium guanidinates of the formula
wherein each of R 1 , R 2 , R 3 , R 4 and R 5 is the same as or different from others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl, and wherein R 5 in addition can be amide or halogen;
(d) tellurium dithiocarbamates of the formula
wherein each of R 1 , R 2 and R 3 is the same as or different from others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl, and wherein R 3 in addition can be amide or halogen;
(e) tellurium precursors of the formula:
in a wherein each of R 1 , R 2 , R 3 and R 4 is the same as or different from others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl;
(f) tellurium precursors of the formula:
(g) tellurium precursors of the formula:
wherein M is Te, and each R is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl;
(h) tellurium precursors of the formula:
wherein each R may be the same as or different from the others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl;
(i) tellurium precursors of the formula:
wherein each of R 1 , R 2 , R 3 and R 4 is the same as or different from others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl, and wherein each of R 3 and R 4 can in addition and independently be amide or halogen;
(j) tellurium precursors of the formula:
wherein
each R 1 and R 2 is the same as or different from the others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl;
(k) tellurium precursors of the formula:
wherein each of R 1 , R 2 , R 3 , R 4 and R 5 is the same as or different from others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl, and wherein each of R 3 , R 4 and R 5 can in addition and independently be amide or halogen;
(l) tellurium precursors of the formula:
wherein each of R 1 , R 2 and R 3 is the same as or different from others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl, and wherein R 3 can in addition be amide or halogen;
(m) tellurium precursors of the formula:
wherein
each of R 1 , R 2 and R 3 is the same as or different from others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl, and wherein R 3 can in addition be amide or halogen; and
Z is independently selected from C 1 -C 6 alkoxy, —NR 1 R 2 , H, C 1 -C 6 alkyl, C 3 -C 10 cycloalkyl, and C 6 -C 13 aryl;
(n) tellurium precursors of the formula:
wherein
each of R 1 , R 2 and R 3 is the same as or different from others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl;
Z is independently selected from C 1 -C 6 alkoxy, —NR 1 R 2 , H, C 1 -C 6 alkyl, C 3 -C 10 cycloalkyl, and C 6 -C 13 aryl, and wherein each R 3 can in addition and independently be amide or halogen; and
x is an integer having a value of from 0 to 4, inclusive;
(o) tellurium precursors of the formula:
wherein
each of R 1 , R 2 , R 3 and R 4 is the same as or different from others, and each is independently selected from H, halogen, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, amide, aminoalkyl, alkylamine, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl;
(p) tellurium precursors of the formula:
wherein
each of R 1 , R 2 , R 3 , R 4 , R 5 and R 6 is the same as or different from others, and each is independently selected from H, halogen, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, amide, aminoalkyl, alkylamine, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl; and
(q) tellurium precursors of the formula:
XTeNR 1 R 2
wherein
X is halogen; and
each of R 1 and R 2 is the same as or different from the other, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl.
12 . A precursor composition package, comprising a storage and dispensing vessel holding a tellurium precursor composition of claim 1 .
13 . The precursor composition package of claim 12 , wherein the tellurium precursor is selected from the group consisting of:
(a) tellurium precursors of the formula
R 3 TeNR 1 R 2
wherein
each of R 1 , R 2 and R 3 is the same as or different from the other, and each is independently selected from H, halogen, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, amide, aminoalkyl, alkylamine, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl, and wherein R 3 can in addition be amide or halogen;
(b) tellurium amidinate precursors of the formula
wherein each of R 1 , R 2 , R 3 and R 4 is the same as or different from others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl, and wherein R 4 in addition can be amide or halogen;
(c) tellurium guanidinates of the formula
wherein each of R 1 , R 2 , R 3 , R 4 and R 5 is the same as or different from others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl, and wherein R 5 in addition can be amide or halogen;
(d) tellurium dithiocarbamates of the formula
wherein each of R 1 , R 2 and R 3 is the same as or different from others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl, and wherein R 3 in addition can be amide or halogen;
(e) tellurium precursors of the formula:
in a wherein each of R 1 , R 2 , R 3 and R 4 is the same as or different from others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl;
(f) tellurium precursors of the formula:
(g) tellurium precursors of the formula:
wherein M is Te, and each R is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl;
(h) tellurium precursors of the formula:
wherein each R may be the same as or different from the others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl;
(i) tellurium precursors of the formula:
wherein each of R 1 , R 2 , R 3 and R 4 is the same as or different from others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl, and wherein each of R 3 and R 4 can in addition and independently be amide or halogen;
(j) tellurium precursors of the formula:
wherein
each R 1 and R 2 is the same as or different from the others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl;
(k) tellurium precursors of the formula:
wherein each of R 1 , R 2 , R 3 , R 4 and R 5 is the same as or different from others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl, and wherein each of R 3 , R 4 and R 5 can in addition and independently be amide or halogen;
(l) tellurium precursors of the formula:
wherein each of R 1 , R 2 and R 3 is the same as or different from others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl, and wherein R 3 can in addition be amide or halogen;
(m) tellurium precursors of the formula:
wherein
each of R 1 , R 2 and R 3 is the same as or different from others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl, and wherein R 3 can in addition be amide or halogen; and
Z is independently selected from C 1 -C 6 alkoxy, —NR 1 R 2 , H, C 1 -C 6 alkyl, C 3 -C 10 cycloalkyl, and C 6 -C 13 aryl;
(n) tellurium precursors of the formula:
wherein
each of R 1 , R 2 and R 3 is the same as or different from others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl;
Z is independently selected from C 1 -C 6 alkoxy, —NR 1 R 2 , H, C 1 -C 6 alkyl, C 3 -C 10 cycloalkyl, and C 6 -C 13 aryl, and wherein each R 3 can in addition and independently be amide or halogen; and
x is an integer having a value of from 0 to 4, inclusive;
(o) tellurium precursors of the formula:
wherein
each of R 1 , R 2 , R 3 and R 4 is the same as or different from others, and each is independently selected from H, halogen, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, amide, aminoalkyl, alkylamine, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl;
(p) tellurium precursors of the formula:
wherein
each of R 1 , R 2 , R 3 , R 4 , R 5 and R 6 is the same as or different from others, and each is independently selected from H, halogen, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, amide, aminoalkyl, alkylamine, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl; and
(q) tellurium precursors of the formula:
XTeNR 1 R 2
wherein
X is halogen; and
each of R 1 and R 2 is the same as or different from the other, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl.
14 . The tellurium precursor composition of claim 1 , comprising a storage medium for the tellurium precursor.
15 . A method of depositing tellurium on a substrate, comprising volatilizing a tellurium precursor composition to form a tellurium precursor vapor, and contacting the tellurium precursor vapor with the substrate to deposit tellurium thereon, wherein the tellurium precursor composition comprises a tellurium precursor selected from the group consisting of:
(i) Te(IV) organyls having the formula TeR 1 R 2 R 3 R 4 wherein each of R 1 , R 2 , R 3 and R 4 is the same as or different from others, and each is independently selected from H, halogen, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, amide, aminoalkyl, alkylamine, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl; (ii) tellurium bis-amides of the formula Te[NR 2 ] 2 wherein each R is independently selected from H, C 1 -C 6 alkyl, C -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl; (iii) asymmetric tellurium compounds including one alkyl substituent and a second ligand containing a heteroatom; (iv) tellurium compounds with ethylenediamine ligands; (v) tellurium compounds with dithiocarbamate ligands; (vi) Te(II) and Te(IV) compounds including at least one nitrogen-based ligand selected from among amidinates, guanidinates, isoureates and beta-diketoiminates; and (vii) dialkyl ditellurides wherein alkyl is C 1 -C 8 alkyl.
16 . The method of claim 15 , wherein the tellurium precursor is selected from the group consisting of Te[N(t-Bu)(SiMe 3 )] 2 and Te[N(SiMe 3 ) 2 ] 2 .
17 . The method of claim 15 , wherein the tellurium precursor is selected from the group consisting of:
(a) tellurium precursors of the formula
R 3 TeNR 1 R 2
wherein
each of R 1 , R 2 and R 3 is the same as or different from the other, and each is independently selected from H, halogen, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, amide, aminoalkyl, alkylamine, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl, and wherein R 3 can in addition be amide or halogen;
(b) tellurium amidinate precursors of the formula
wherein each of R 1 , R 2 , R 3 and R 4 is the same as or different from others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl, and wherein R 4 in addition can be amide or halogen;
(c) tellurium guanidinates of the formula
wherein each of R 1 , R 2 , R 3 , R 4 and R 5 is the same as or different from others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl, and wherein R 5 in addition can be amide or halogen;
(d) tellurium dithiocarbamates of the formula
wherein each of R 1 , R 2 and R 3 is the same as or different from others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl, and wherein R 3 in addition can be amide or halogen;
(e) tellurium precursors of the formula:
in a wherein each of R 1 , R 2 , R 3 and R 4 is the same as or different from others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl;
(f) tellurium precursors of the formula:
(g) tellurium precursors of the formula:
wherein M is Te, and each R is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl;
(h) tellurium precursors of the formula:
wherein each R may be the same as or different from the others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl;
(i) tellurium precursors of the formula:
wherein each of R 1 , R 2 , R 3 and R 4 is the same as or different from others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl, and wherein each of R 3 and R 4 can in addition and independently be amide or halogen;
(j) tellurium precursors of the formula:
wherein
each R 1 and R 2 is the same as or different from the others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl;
(k) tellurium precursors of the formula:
wherein each of R 1 , R 2 , R 3 , R 4 and R 5 is the same as or different from others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl, and wherein each of R 3 , R 4 and R 5 can in addition and independently be amide or halogen;
(l) tellurium precursors of the formula:
wherein each of R 1 , R 2 and R 3 is the same as or different from others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl, and wherein R 3 can in addition be amide or halogen;
(m) tellurium precursors of the formula:
wherein
each of R 1 , R 2 and R 3 is the same as or different from others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl, and wherein R 3 can in addition be amide or halogen; and
Z is independently selected from C 1 -C 6 alkoxy, —NR 1 R 2 , H, C 1 -C 6 alkyl, C 3 -C 10 cycloalkyl, and C 6 -C 13 aryl;
(n) tellurium precursors of the formula:
wherein
each of R 1 , R 2 and R 3 is the same as or different from others, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl;
Z is independently selected from C 1 -C 6 alkoxy, —NR 1 R 2 , H, C 1 -C 6 alkyl, C 3 -C 10 cycloalkyl, and C 6 -C 13 aryl, and wherein each R 3 can in addition and independently be amide or halogen; and
x is an integer having a value of from 0 to 4, inclusive;
(o) tellurium precursors of the formula:
wherein
each of R 1 , R 2 , R 3 and R 4 is the same as or different from others, and each is independently selected from H, halogen, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, amide, aminoalkyl, alkylamine, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl;
(p) tellurium precursors of the formula:
wherein
each of R 1 , R 2 , R 3 , R 4 , R 5 and R 6 is the same as or different from others, and each is independently selected from H, halogen, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, amide, aminoalkyl, alkylamine, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl; and
(q) tellurium precursors of the formula:
XTeNR 1 R 2
wherein
X is halogen; and
each of R 1 and R 2 is the same as or different from the other, and each is independently selected from H, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl.
18 . The method of claim 15 , wherein the tellurium precursor is selected from the group consisting of N,N′-di-tert-butylenediamide tellurium dichloride; Me 2 NHTeCl 2 ; NHTe(Cl)NMe 2 ; and Te 2 (t-Bu) 2 , wherein Me is methyl and t-Bu is tertiary butyl.
19 . The method of claim 15 , wherein said contacting comprises atomic layer deposition.
20 . The method of claim 19 , wherein tellurium is deposited to form a GST material on the substrate.Join the waitlist — get patent alerts
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