System for separating a diced semiconductor die from a die attach tape

Abstract

A system is disclosed for ejecting a semiconductor die from a tape to which the die is affixed during the wafer dicing process. In embodiments, the system includes an ejector tool including a support table, ejector pins and a pick-up arm. The support table is connected to a vacuum source for creating a negative pressure at an interface between the tape and support table. The support table further includes an aperture with one or more chamfered sidewalls. The vacuum source is connected to the aperture so that, upon placement of the tape on the support table with a die centered over the aperture, the vacuum source pulls a portion of the tape around the edges of the semiconductor die away from the die and into the space created by the chamfered edges.

1 . A tool for separating a semiconductor die from at least one layer of a tape having first and second layers, the first and second layers held together with a peeling strength, the tool comprising:
 a support table including an upper surface for supporting the tape and semiconductor die, the support table further including an aperture in the upper surface having at least one chamfered sidewall, the at least one chamfered sidewall provided so that a distance between the at least one chamfered sidewall and a wall opposite the at least one chamfered sidewall is greater at the upper surface of the support table as compared to a same dimension at a lower surface of the support table opposite the upper surface; and   a vacuum source for holding the first layer of the tape to the support table, the vacuum source being communicated to the aperture and exerting a force on the first layer of the tape exceeding the peeling strength.   
     
     
         2 . The tool recited in  claim 1 , the aperture being rectangular and including four chamfered sidewalls. 
     
     
         3 . The tool recited in  claim 1 , the aperture being rectangular and including two chamfered sidewalls opposite each other. 
     
     
         4 . The tool recited in  claim 1 , the at least one chamfered sidewall having a sidewall sloped at an angle of between 10° and 60° relative to the upper surface of the support table. 
     
     
         5 . The tool recited in  claim 1 , the at least one chamfered sidewall defining a space into which the first layer may be sucked away from at least one edge of the semiconductor die. 
     
     
         6 . The tool recited in  claim 1 , further comprising at least one ejector for extending through the aperture from the lower surface of the support table, the ejector capable of lifting the semiconductor die upward after the first layer has been sucked away from at least one edge of the semiconductor die. 
     
     
         7 . The tool recited in  claim 1 , wherein the aperture is rectangular and sized to have a length and width at the upper surface that is greater than a length and width of the semiconductor die, and wherein the aperture is sized to have a length and width at the lower surface that is less than the length and width of the semiconductor die. 
     
     
         8 . The tool recited in  claim 7 , wherein the first layer of the tape is sucked away from at least one edge of the semiconductor die and against the at least one chamfered sidewall upon activation of the vacuum source. 
     
     
         9 . A method of separating a semiconductor die from at least one layer of a tape having first and second layers, the first and second layers held together with a peeling strength, the method comprising the steps of:
 (a) situating the tape and semiconductor die on a support table with a reference semiconductor die to be separated centered over an aperture including at least one chamfered sidewall; and   (b) generating a suction force at an interface between an upper surface of the support table and the first layer of tape supported on the support table, the suction force exceeding the peeling strength to pull the first layer of tape away from at least one edge of the reference semiconductor die positioned over the at least one chamfered sidewall.   
     
     
         10 . The method of  claim 9 , further comprising the step (c) of supporting a portion of the reference semiconductor die on ejector pins extending from below the support table through the aperture during said step (b) of pulling the first layer of tape away from at least one edge of the reference semiconductor die. 
     
     
         11 . The method of  claim 9 , further comprising the step (d) of pushing the reference semiconductor die upward after said step (b) of pulling the first layer of tape away from at least one edge of the reference semiconductor die. 
     
     
         12 . The method of  claim 11 , further comprising the step (e) of grasping the reference semiconductor die raised in said step (c) and carrying it away from the support table. 
     
     
         13 . The method of  claim 9 , said step (b) further comprising the step of pulling the first layer of tape away from at least one semiconductor die adjacent the reference semiconductor die at the at least one chamfered sidewall. 
     
     
         14 . The method of  claim 9 , said step (a) comprising the step of sizing the aperture and at least one chamfered sidewall to have a length and width at the upper surface that is greater than a length and width of the reference semiconductor die, and sizing the aperture and at least one chamfered sidewall to have a length and width at the lower surface that is less than the length and width of the semiconductor die. 
     
     
         15 . The method of  claim 9 , said step (b) comprising the step of communicating the suction force to the aperture and to areas on the support table surrounding the aperture. 
     
     
         16 . A semiconductor package, comprising:
 a substrate; and   at least one semiconductor die affixed to the substrate or another of the at least one semiconductor die, the at least one semiconductor die separated from a wafer by the steps of:   (a) mounting the at least one semiconductor die on a tape along with the other semiconductor die on the wafer, the tape including first and second layers affixed to each other with a peeling strength;   (b) dicing the at least one semiconductor die from the other semiconductor die;   (c) situating the tape and at least one semiconductor die of the wafer on a support table with the at least one semiconductor die centered over an aperture including at least one chamfered sidewall; and   (d) generating a suction force at an interface between an upper surface of the support table and the first layer of tape supported on the support table, the suction force exceeding the peeling strength to pull the first layer of tape away from at least one edge of the at least one semiconductor die positioned over the at least one chamfered sidewall.   
     
     
         17 . The semiconductor package recited in  claim 16 , wherein the package comprises a land grid array semiconductor package. 
     
     
         18 . The semiconductor package recited in  claim 16 , wherein the package comprises a flash memory. 
     
     
         19 . The semiconductor package recited in  claim 16 , the at least one die separated from the wafer by the further steps of:
 (d) pushing the reference semiconductor die upward after said step (d) of pulling the first layer of tape away from at least one edge of the reference semiconductor die; and   (e) grasping the reference semiconductor die raised in said step (c) and carrying it away from the support table.   
     
     
         20 . The semiconductor package recited in  claim 16 , said step (d) further comprising the step of leaving the second layer of the tape affixed to the at least one semiconductor die.