US2012132925A1PendingUtilityA1
Method for manufacturing a semiconductor structure, and a corresponding semiconductor structure
Est. expiryMar 21, 2026(expired)· nominal 20-yr term from priority
Inventors:Gerhard LammelHubert BenzelMatthias IllingFranz LaermerSilvia KronmuellerPaul FarberSimon ArmbrusterRalf ReichenbachChristoph SchellingAndo Feyh
H10P 14/3802H10P 14/3411H10P 14/2905H10P 14/2904H10P 14/36H10P 95/90H10P 32/171H10P 32/14H10P 32/12H10P 32/16
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Claims
Abstract
A method for manufacturing a semiconductor structure is provided which includes the following steps: a crystalline semiconductor substrate ( 1 ) is supplied; a porous region ( 10 ) is provided adjacent to a surface (OF) of the semiconductor substrate ( 1 ); a dopant ( 12 ) is introduced into the porous region ( 10 ) from the surface (OF); and the porous region ( 10 ) is thermally recrystallized into a crystalline doping region ( 10′ ) of the semiconductor substrate ( 1 ) whose doping type and/or doping concentration and/or doping distribution are/is different from those or that of the semiconductor substrate ( 1 ). A corresponding semiconductor structure is likewise provided.
Claims
exact text as granted — not AI-modified1 - 11 . (canceled)
12 . A semiconductor structure, comprising:
a crystalline semiconductor substrate; and a crystalline doping region in the form of a trough adjacent to a surface of the semiconductor substrate, wherein at least one of a doping type, a doping concentration, and a doping distribution of the crystalline doping region is different from that of the semiconductor substrate, and wherein the doping distribution is substantially homogeneous across an entire depth of the doping region.
13 . The semiconductor structure of claim 12 , wherein the semiconductor substrate is made of at least one of silicon and silicon carbide.
14 . The semiconductor structure of claim 13 , wherein a dopant is distributed throughout an entire volume of the crystalline doping region.
15 . The semiconductor structure of claim 13 , wherein the doping region is saturated.
16 . The semiconductor structure of claim 13 , wherein the doping region is monocrystalline.
17 . The semiconductor structure of claim 12 , wherein a depth of the crystalline doping region is at least 50 μm from the surface.
18 . The semiconductor structure of claim 17 , wherein the semiconductor substrate is made of at least one of silicon and silicon carbide.
19 . The semiconductor structure of claim 17 , wherein a dopant is distributed throughout an entire volume of the crystalline doping region.
20 . The semiconductor structure of claim 17 , wherein the doping region is saturated.
21 . The semiconductor structure of claim 17 , wherein the doping region is monocrystalline.
22 . The semiconductor structure of claim 12 , wherein a dopant is distributed throughout an entire volume of the crystalline doping region.
23 . The semiconductor structure of claim 12 , wherein the doping region is saturated.
24 . The semiconductor structure of claim 12 , wherein the doping region is monocrystalline.Cited by (0)
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