Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride

Abstract

Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si 3 N 4 ), siliconoxynitride (SiO x N y ) and/or silicon dioxide (SiO 2 ). The precursors of the invention are amenable to use in low temperature (e.g., <500° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.

1 . A disilicon cycloamide precursor comprising: 
       
         
           
           
               
               
           
         
         wherein: 
         each of R 8  can be the same as or different from the others and each is independently selected from the group consisting of H, C 1 -C 4  alkyl, and C 3 -C 6  cycloalkyl; and 
         each of R 9  can be the same as or different from the others and each is independently selected from the group consisting of H and NR 8 H. 
       
     
     
         2 . A method of forming a silicon-containing film on a substrate, comprising contacting a substrate under vapor deposition conditions with a vapor of a disilicon cycloamide precursor as claimed in  claim 1 . 
     
     
         3 . The method of  claim 2 , wherein said contacting is carried out at temperature below 600° C. 
     
     
         4 . The method of  claim 2 , wherein said contacting is carried out at temperature below 550° C. 
     
     
         5 . The method of  claim 2 , wherein said contacting is carried out at temperature in a range of from 350° C. to 550° C. 
     
     
         6 . The method of  claim 2 , wherein the contacting is carried out in a low pressure chemical vapor deposition process wherein said vapor deposition conditions comprise pressure in a range of from 100 millitorr to 1000 torr. 
     
     
         7 . The method of  claim 2 , wherein the substrate is contacted in said contacting with a co-reactant selected from the group consisting of:
 oxygen;   ozone;   CO 2 ;   nitrogen;   ammonia;   compounds of the formula R 3 Si—N 3  wherein each R is independently selected from C 1 -C 3  alkyl;   compounds of the formula R—N═NR′ wherein each R is independently selected from C 1 -C 3  alkyl and R′ is R or H;   compounds of the formula R—N═N + ═NR′ wherein each R is independently selected from C 1 -C 3  alkyl and R′ is R or H;   dinitrogen oxide;   hydrogen;   silane;   disilane;   hafnium sources; and   zirconium sources.   
     
     
         8 . The method of  claim 2 , wherein the substrate is contacted in said contacting with an excess of a reducing agent to form a silicon epitaxial layer. 
     
     
         9 . The method of  claim 7 , wherein the silicon-containing film comprises a low k dielectric film. 
     
     
         10 . The method of  claim 7 , wherein the silicon-containing film comprises a high k gate silicate film. 
     
     
         11 . The method of  claim 7 , wherein the silicon-containing film comprises a silicon nitride film. 
     
     
         12 . The method of  claim 7 , wherein the silicon-containing film comprises a silicon oxynitride film. 
     
     
         13 . The method of  claim 2 , wherein said contacting is carried out in an atomic layer deposition process. 
     
     
         14 . The method of  claim 2 , wherein the disilicon cycloamide precursor is reacted with a co-reactant in a reaction scheme selected from the group consisting of those of reaction scheme (C) below: 
       
         
           
           
               
               
           
         
       
       wherein A is selected from the group consisting of R 3 Si—N 3 , R—N═NR′ and R—N═N + ═NR′, wherein each R is independently selected from the group consisting of C 1 -C 3  alkyl and R′ is R or H. 
     
     
         15 . A method of forming silicon nitride (Si 3 N 4 ) on a substrate, comprising contacting the substrate with
 (i) a precursor of the formula   
       
         
           
           
               
               
           
         
         wherein: 
         each of R 8  can be the same as or different from the others and each is independently selected from the group consisting of H, C 1 -C 4  alkyl, and C 3 -C 6  cycloalkyl; and 
         each of R 9  can be the same as or different from the others and each is independently selected from the group consisting of H and NR 8 H; and 
         (ii) a nitrogen source compound. 
       
     
     
         16 . The method of  claim 15 , wherein said nitrogen source compound comprises ammonia. 
     
     
         17 . The method of  claim 15 , wherein said nitrogen source compound is selected from the group consisting of R 3 Si—N 3 , R—N═NR′ and R—N═N + ═NR′, wherein each R is independently selected from the group consisting of C 1 -C 3  alkyl substituents, and R′ is R or H. 
     
     
         18 . The method of  claim 15 , wherein said nitrogen source compound is selected from the group consisting of (i) R-diazo compounds, wherein R is H, C 1 -C 4  alkyl or C 3 -C 6  cycloalkyl, (ii) triazoles, (iii) tetrazoles, (iv) amadines, (v) silylazides, (vi) aziridines, and (vii) molecules including organic acyclic or cyclic moieties that contain one or more —N—N bonds. 
     
     
         19 . The method of  claim 15 , wherein said contacting is carried out at temperature below 600° C. 
     
     
         20 . The method of  claim 15 , wherein said contacting is carried out at temperature below 550° C.