In-situ deposited mask layer for device singulation by laser scribing and plasma etch

Abstract

Methods of dicing substrates by both laser scribing and plasma etching. A method includes forming an in-situ mask with a plasma etch chamber by accumulating a thickness of plasma deposited polymer to protect IC bump surfaces from a subsequent plasma etch. Second mask materials, such as a water soluble mask material may be utilized along with the plasma deposited polymer. At least some portion of the mask is patterned with a femtosecond laser scribing process to provide a patterned mask with trenches. The patterning exposing regions of the substrate between the ICs in which the substrate is plasma etched to singulate the IC and the water soluble material layer washed off.

What is claimed is: 
     
         1 . A system for dicing a semiconductor substrate comprising a plurality of ICs, the system comprising:
 a laser scribe module to pattern a mask and expose regions of a substrate between the ICs, the mask comprising a layer of water soluble material;   a plasma etch module physically coupled to the laser scribe module, the plasma etch module to plasma deposit a polymer mask over the substrate and to singulate the ICs by plasma etching of the substrate; and   a robotic transfer chamber to transfer a laser scribed substrate between the laser scribe module and the plasma etch module.   
     
     
         2 . The system of  claim 1 , wherein the laser scribe comprises a femtosecond laser having a wavelength less than or equal to 540 nanometers and a pulse width of less than or equal to 400 femtoseconds.