Multi chamber processing system

Abstract

A multi-chamber processing system includes a transfer chamber, a first processing chamber outfitted to perform CVD, a second processing chamber, and a robot positioned to transfer substrates between the transfer chamber, the first processing chamber, and the second processing chamber. The second processing chamber may include one or a combination of a first electrode and a second electrode comprising a plasma cavity formed therein.

1 . A multi-chamber processing system, comprising:
 a transfer chamber;   a first processing chamber outfitted to perform CVD;   a second processing chamber comprising:
 a showerhead assembly including a grounded electrode having a recess in its top center to hold a top electrode through an isolator ring, wherein the top electrode has a passage formed there through with a gradually increasing inner diameter; 
 a hollow cylinder having a top wall, a bottom wall, an inner diameter wall and an outer diameter wall; 
 a disc having a top surface and a lower surface, the top surface coupled to the inner diameter wall, the lower surface coupled to the bottom wall, the disc having a plurality of apertures connecting the lower surface to the top surface; and 
 an annular mounting flange extending from the outer diameter wall of the hollow cylinder, the mounting flange having an upper surface and a lower surface, the upper surface coplanar with the top wall of the hollow cylinder, the lower surface having an elevation above the top surface of the disc, wherein the hollow cylinder, the disc and the annular mounting flange are formed as a one piece structure having a channel circumscribing and positioned coplanar with the disc and the annular mounting flange is supporting the grounded electrode, and wherein the plurality of apertures of the disc are in fluid communication with the passage of the top electrode; and 
   a robot positioned to transfer substrates between the transfer chamber, the first processing chamber, and the second processing chamber.   
     
     
         2 . The multi-chamber processing system of  claim 1 , wherein the showerhead assembly further includes an o-ring type seal gland formed in the annular mounting flange. 
     
     
         3 . The multi-chamber processing system of  claim 1 , further comprising a heater positioned below the lower surface of the mounting flange. 
     
     
         4 . The multi-chamber processing system of  claim 1 , further comprising: a thermocouple positioned in the showerhead assembly. 
     
     
         5 . The multi-chamber processing system of  claim 1 , wherein the disc and the annular mounting flange are fabricated from an aluminum alloy. 
     
     
         6 . The multi-chamber processing system of  claim 1 , wherein the disc and the annular mounting flange have a thermal resistance of less than about 5×10 −4  m 2  K/W. 
     
     
         7 . The multi-chamber processing system of  claim 1 , wherein the inner diameter wall of the hollow cylinder and the top surface of the disc define a recessed center surface, and the channel circumscribes the recessed center surface. 
     
     
         8 . The multi-chamber processing system of  claim 7 , wherein the disc, the hollow cylinder, and the annular mounting flange are fabricated from an aluminum alloy. 
     
     
         9 . The multi-chamber processing system of  claim 7 , wherein the disc and the annular mounting flange have a thermal resistance of less than about 5×10 −4  m 2  K/W. 
     
     
         10 . The multi-chamber processing system of  claim 7 , wherein a heater is positioned in the passage of the top electrode. 
     
     
         11 . The multi-chamber processing system of  claim 10 , further comprising a thermocouple disposed in the showerhead assembly. 
     
     
         12 . A multi-chamber processing system, comprising:
 a transfer chamber;   a first processing chamber outfitted to perform CVD;   a second processing chamber comprising a lid assembly for semiconductor processing, the lid assembly comprising:
 a first electrode having an expanding section that has a gradually increasing inner diameter; 
 a second electrode disposed opposite the first electrode, wherein a plasma cavity is defined between the inner diameter of the expanding section of the first electrode and a first surface of the second electrode and wherein the second electrode has a plurality of gas passages that are in fluid communication with the plasma cavity; and 
 an isolation ring disposed about an outer diameter of the expanding section, wherein the isolation ring and the expanding section of the first electrode fit within a recess formed in the first surface of the second electrode; and 
   a robot positioned to transfer substrates between the transfer chamber, the first processing chamber, and the second processing chamber.   
     
     
         13 . A multi-chamber processing system, comprising:
 a transfer chamber;   a first processing chamber outfitted to perform CVD;   a second processing chamber comprising a lid assembly for semiconductor processing, the lid assembly comprising:
 a first electrode having an expanding section having a gradually increasing inner diameter; 
 a second electrode disposed opposite the first electrode, wherein the second electrode comprises a plurality of gas passages formed there through and wherein a plasma cavity is defined between the inner diameter of the expanding section of the first electrode and a first surface of the second electrode; 
 a perforated plate disposed opposite a second surface of the second electrode, wherein perforations of the perforated plate are in fluid communication with the plurality of gas passages of the second electrode, wherein the second electrode and the perforated plate each comprise a notched outer diameter, and the notched outer diameter of the second electrode is adapted to mount on the notched outer diameter of the perforated plate; and 
 an isolation ring disposed about an outer diameter of the expanding section of the first electrode, wherein the isolation ring and the expanding section of the first electrode fit within a recess formed in the first surface of the second electrode; and 
   a robot positioned to transfer substrates between the transfer chamber, the first processing chamber, and the second processing chamber.   
     
     
         14 . The multi-chamber processing system of  claim 13 , wherein the perforated plate of the lid assembly includes a fluid channel embedded in an outer diameter thereof for conveying a heating medium to heat the perforated plate. 
     
     
         15 . The multi-chamber processing system of  claim 13 , wherein the perforated plate of the lid assembly wherein the perforated plate convectively heats the second electrode. 
     
     
         16 . The multi-chamber processing system of  claim 13 , wherein the perforated plate is a first perforated plate and a second perforated plate is disposed between the second electrode and the first perforated plate, and at least a portion of the second perforated plate is adapted to mount to the second surface of the second electrode. 
     
     
         17 . The multi-chamber processing system of  claim 16 , wherein the first perforated plate includes a fluid channel embedded in an outer diameter thereof for conveying a heating medium. 
     
     
         18 . The multi-chamber processing system of  claim 16 , wherein the expanding section of the first electrode is connected to a RF power source and adapted to confine a plasma of reactive gases within the plasma cavity. 
     
     
         19 . The multi-chamber processing system of  claim 16 , wherein the perforations of the first perforated plate and the second perforated plate are in fluid communication with the gas passages of the second electrode.