Processing systems and methods for halide scavenging

Abstract

Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

What is claimed is: 
     
         1 . A substrate processing system comprising:
 a plurality of holding chambers;   a plurality of loading chambers configured to receive substrates into a vacuum environment;   an interface section having at least two interface transfer devices configured to deliver substrates between the plurality of holding chambers coupled with the interface section at a first location of the interface section and the plurality of loading chambers coupled with the interface section at a second location of the interface section opposite the plurality of holding chambers;   a treatment chamber positioned in vertical alignment to and coupled with at least one of the plurality of loading chambers;   a plurality of process chambers; and   a process transfer device configured to deliver a substrate between any of the plurality of loading chambers and any of the plurality of processing chambers while maintaining the substrate under vacuum conditions, wherein the process transfer device is further configured to deliver substrates vertically to the treatment chamber.   
     
     
         2 . The substrate processing system of  claim 1 , wherein the loading chambers and process chambers are all on a first elevational plane of the substrate processing system, and wherein the treatment chamber is on a second elevational plane of the substrate processing system above the first elevational plane of the substrate processing system. 
     
     
         3 . The substrate processing system of  claim 1 , wherein the transfer device is configured to maintain vacuum conditions while delivering substrates vertically to the treatment chamber. 
     
     
         4 . The substrate processing system of  claim 1 , further comprising a plurality of treatment chambers, wherein each treatment chamber is in vertical alignment to and coupled with one of the plurality of loading chambers. 
     
     
         5 . The substrate processing system of  claim 4 , wherein the system includes two loading chambers and two treatment chambers, wherein the loading chambers are disposed horizontally from one another. 
     
     
         6 . The substrate processing system of  claim 5 , further comprising a treatment plasma generating device separate from and coupled with both of the treatment chambers. 
     
     
         7 . The substrate processing system of  claim 5 , further comprising two treatment plasma generating devices, wherein one of the treatment plasma generating devices is coupled with one of the treatment chambers and a second of the treatment plasma generating devices is coupled with a second of the treatment chambers. 
     
     
         8 . The substrate processing system of  claim 1 , wherein the holding chambers comprise at least one inlet port and are configured to receive a fluid through the inlet port and direct the fluid through the holding chamber and into the interface section. 
     
     
         9 . The substrate processing system of  claim 8 , wherein the holding chambers comprise at least one internal diffuser configured to direct the received fluid throughout the holding chamber. 
     
     
         10 . The substrate processing system of  claim 1 , wherein the loading chambers comprise at least one heating device configured to heat the loading chamber up to about 300° C. 
     
     
         11 . The substrate processing system of  claim 1 , further comprising a wet etching chamber coupled with the interface section at a third location of the interface section adjacent the first location and second location of the interface section. 
     
     
         12 . The substrate processing system of  claim 11 , further comprising a storage chamber coupled with the interface section at a fourth location of the interface section opposite the third location. 
     
     
         13 . The substrate processing system of  claim 1 , wherein the treatment chamber comprises components configured to generate a direct plasma within the treatment chamber. 
     
     
         14 . The substrate processing system of  claim 13 , wherein the direct plasma comprises a capacitively-coupled plasma. 
     
     
         15 . The substrate processing system of  claim 1 , wherein the treatment chamber comprises components configured to generate an ultraviolet light treatment within the treatment chamber. 
     
     
         16 . The substrate processing system of  claim 1 , wherein the plurality of processing chambers are coupled as pairs of tandem processing chambers within the substrate processing system. 
     
     
         17 . The substrate processing system of  claim 16 , wherein the plurality of processing chambers comprise at least two pairs of tandem processing chambers, wherein a first of the at least two pairs of tandem processing chambers are configured to perform a silicon oxide etching operation, and the second of the at least two pairs of tandem processing chambers are configured to perform a silicon etching operation. 
     
     
         18 . A method of processing a substrate, the method comprising:
 transferring a substrate from a holding chamber to a loading chamber with a first transfer device;   evacuating the loading chamber such that the substrate is maintained in a vacuum environment;   transferring the substrate from the evacuated loading chamber to a process chamber with a second transfer device;   transferring the substrate from the process chamber to the loading chamber with the second transfer device;   removing the vacuum conditions from the loading chamber; and   transferring the substrate from the loading chamber to a storage chamber with the first transfer device.   
     
     
         19 . The method of processing a substrate of  claim 18 , further comprising transferring the substrate to a wet etching station using the first transfer device prior to transferring the substrate to the holding chamber. 
     
     
         20 . The method of processing a substrate of  claim 18 , further comprising transferring the substrate from the process chamber to a treatment chamber in vertical alignment to and coupled with the loading chamber with the second transfer device prior to transferring the substrate to the loading chamber.