Die-stacking using through-silicon vias on bumpless build-up layer substrates including embedded-dice, and processes of forming same

Abstract

An apparatus includes a coreless substrate with a through-silicon via (TSV) embedded die that is integral to the coreless substrate. The apparatus includes a subsequent die that is coupled to the TSV die and that is disposed above the coreless substrate.

What is claimed is: 
     
         1 . An apparatus, comprising:
 a first die including a through-silicon via disposed therein (first TSV die); wherein the first TSV die is electrically connected to a substrate; wherein the TSV die includes an active surface and a backside surface; and wherein at least one trace disposed within the substrate is connected to at least one die bond pad on the first TSV die active surface; and   a second TSV die including a through-silicon via disposed therein (second TSV die) in contact with the first TSV die; wherein at least one through-silicon via of the second TSV die is in electrical contact with at least one through-silicon via of the first TSV die.   
     
     
         2 . The apparatus of  claim 1 , further including metallization formed on an active surface of the first TSV die. 
     
     
         3 . The apparatus of  claim 1 , further including metallization formed on an active surface of the second TSV die. 
     
     
         4 . The apparatus of  claim 1 , wherein the first TSV die comprises a memory device. 
     
     
         5 . The apparatus of  claim 1 , further including a third die including a through-silicon via disposed therein (third TSV die) in contact with the second TSV die; wherein at least one through-silicon via of the third TSV die is in electrical contact with at least one through-silicon via of the second TSV die. 
     
     
         6 . The apparatus of  claim 5 , further including a fourth die including a through-silicon via disposed therein (fourth TSV die) in contact with the third TSV die; wherein at least one through-silicon via of the fourth TSV die is in electrical contact with at least one through-silicon via of the third TSV die. 
     
     
         7 . The apparatus of  claim 1 , further including a subsequent die electrically connected to the first TSV die through the second TSV die. 
     
     
         8 . The apparatus of  claim 1 , wherein the first TSV die and the second TSV die are part of one of a cellular telephone, a pager, a hand-held reader, a portable computer, a desktop computer, and a two-way radio.