Technique For Processing A Substrate

Abstract

Techniques for processing a substrate are disclosed. In one exemplary embodiment, the technique may be realized as a method for processing a substrate, the method comprising: ionizing first material and second material in an ion source chamber of an ion source, the first material being boron (B) containing material, the second material being one of phosphorous (P) containing material and arsenic (As) containing material; generating first ions containing B and second ions containing one of P and As; and extracting the first and second ions from the ion source chamber and directing the first and second ions toward the substrate.

What is claimed is: 
     
         1 . A method for processing a substrate, the method comprising:
 ionizing first material and second material in an ion source chamber of an ion source, the first material being boron (B) containing material, the second material being one of phosphorous (P) containing material and arsenic (As) containing material;   generating first ions containing B and second ions containing one of P and As; and   extracting the first ions and second ions from the ion source chamber and directing the first and second ions toward the substrate.   
     
     
         2 . The method according to  claim 1 , further comprising:
 implanting the first ions and second ions into the substrate.   
     
     
         3 . The method according to  claim 1 , further comprising:
 implanting one of the first and second ions into the substrate without implanting the other one of the first and second ions into the substrate.   
     
     
         4 . The method according to  claim 3 , further comprising:
 directing the first ions and second ions toward beam-line components; and   separating the first ions and second ions in the beam-line components.   
     
     
         5 . The method according to  claim 1 , wherein the first material is hydride or fluoride of B, and wherein the second material is hydride or fluoride of P. 
     
     
         6 . The method according to  claim 5 , wherein the first material is one of BF 3  and B 2 F 4 , and wherein the second material is one of PH 3  and PF 3 . 
     
     
         7 . The method according to  claim 1 , wherein the first material is hydride or fluoride of B, and wherein the second material is hydride or fluoride of As. 
     
     
         8 . The method according to  claim 7 , wherein the first material is one of BF 3  and B 2 F 4 , and wherein the second material is one of AsH 3  and AsF 3 . 
     
     
         9 . The method according to  claim 1 , wherein the first and second materials are provided into the ion source chamber as gases and wherein the second material comprises approximately 5% to approximately 20% of total gases in the ion source chamber by volume. 
     
     
         10 . A method for processing a substrate, the method comprising:
 providing a feed material and a diluent in an ion source chamber of an ion source, the feed material being boron (B) containing material, the diluent being one of phosphorous (P) containing material and arsenic (As) containing material;   ionizing the feed material and a diluent in the ion source chamber and generating first ions containing B and second ions containing one of P and As; and   extracting the first and second ions from the ion source chamber.   
     
     
         11 . The method according to  claim 10 , further comprising:
 implanting the first ions into the substrate.   
     
     
         12 . The method according to  claim 10 , wherein the feed material and the diluent are provided into the ion source chamber as gases, and wherein diluent comprises approximately 5% to approximately 20% of total gases in the ion source chamber by volume. 
     
     
         13 . The method according to  claim 10 , wherein the feed material is one of BF 3  and B 2 F 4 , and wherein the diluent is one of PH 3  and PF 3 . 
     
     
         14 . The method according to  claim 10 , wherein the feed material is one of BF 3  and B 2 F 4 , and wherein the diluent is one of AsH 3  and AsF 3 . 
     
     
         15 . A method for processing a substrate, the method comprising:
 ionizing a first material and second material in an ion source chamber of an ion source, the first material being boron (B) containing material, the second material being one of germanium (Ge) containing material and silicon (Si) containing material;   generating first ions containing B and second ions containing one of Ge and Si; and   extracting the first and second ions from the ion source chamber and directing the first and second ions toward the substrate.   
     
     
         16 . The method according to  claim 15 , further comprising:
 implanting the first and second ions into the substrate.   
     
     
         17 . The method according to  claim 15 , further comprising:
 implanting one of the first and second ions into the substrate without implanting the other one of the first and second ions into the substrate.   
     
     
         18 . The method according to  claim 17 , further comprising:
 directing the first ions and second ions toward beam-line components; and   separating the first ions and second ions in the beam-line components.   
     
     
         19 . The method according to  claim 15 , wherein the first material is one of BF 3  and B 2 F 4 , and wherein the second material is one of GeH 4  and SiH 4 . 
     
     
         20 . The method according to  claim 15 , wherein the first and second materials are provided into the ion source chamber as gases and wherein the second material comprises approximately 5% to approximately 30% of total gases in the ion source chamber by volume.