US2015235889A1PendingUtilityA1

System and method for performing hot water seal on electrostatic chuck

Assignee: LAM RES CORPPriority: Aug 26, 2011Filed: May 5, 2015Published: Aug 20, 2015
Est. expiryAug 26, 2031(~5.1 yrs left)· nominal 20-yr term from priority
H10P 72/72H10P 72/722B05D 5/12C23C 8/02B05D 7/52Y10T279/23C23C 22/66H01L 21/6833C25D 11/246C25D 11/18
41
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

A method is provided for treating a bipolar ESC having a front surface and a back surface, the front surface including an anodized layer. The method includes eliminating the anodized layer, disposing a new anodized layer onto the front surface, and treating the new anodized layer with water to seal the new anodized layer.

Claims

exact text as granted — not AI-modified
What is claimed as new and desired to be protected by Letters Patent of the United States is: 
     
         1 . A bipolar ESC having a front surface and a back surface, the front surface having an anodized layer comprising a first layer of Al 2 O 3  and a second layer of Al 2 O 3 ,
 wherein the first layer of Al 2 O 3  has a first thickness and a first density,   wherein the second layer of Al 2 O 3  has a second thickness and a second density,   wherein the first thickness is less than the second thickness, and   wherein the first density is greater than the second density.   
     
     
         2 . The bipolar ESC of  claim 1 , wherein the second layer of Al 2 O 3  is a layer of porous Al 2 O 3  treated with hot deionized water to create AlO(OH). 
     
     
         3 . The bipolar ESC of  claim 1 , wherein the second layer of Al 2 O 3  is a layer of porous Al 2 O 3  treated with water to create AlO(OH) by reacting the second layer of porous Al 2 O 3  with the water to create boehmite. 
     
     
         4 . The bipolar ESC of  claim 1 , wherein the first layer is under the second layer, the first layer has a thickness of about 750 to 800 angstroms and the second layer has a thickness of about 2 mils. 
     
     
         5 . The bipolar ESC of  claim 1 , wherein the anodized layer has a dielectric constant of about 10. 
     
     
         6 . The bipolar ESC of  claim 1 , wherein the second layer consists essentially of pore-free AlO(OH). 
     
     
         7 . The bipolar ESC of  claim 1 , wherein the second layer has an exposed surface on which a semiconductor wafer can be electrostatically clamped. 
     
     
         8 . The bipolar ESC of  claim 1 , wherein the anodized layer has a consistent dielectric constant effective to avoid failure associated with chucking or de-chucking wafers thereon. 
     
     
         9 . The bipolar ESC of  claim 1 , wherein the anodized layer is an anodized surface of an aluminum alloy.

Join the waitlist — get patent alerts

Track US2015235889A1 — get alerts on status changes and closely related new filings.

We store only your email — no account needed. See our privacy policy.