US2015235889A1PendingUtilityA1
System and method for performing hot water seal on electrostatic chuck
Est. expiryAug 26, 2031(~5.1 yrs left)· nominal 20-yr term from priority
Inventors:Hong ShihTuochuan HuangDavid SchaeferAmbarish ChhatreJohn DaughertyMinghang WuClifford Erik La Croix
H10P 72/72H10P 72/722B05D 5/12C23C 8/02B05D 7/52Y10T279/23C23C 22/66H01L 21/6833C25D 11/246C25D 11/18
41
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Claims
Abstract
A method is provided for treating a bipolar ESC having a front surface and a back surface, the front surface including an anodized layer. The method includes eliminating the anodized layer, disposing a new anodized layer onto the front surface, and treating the new anodized layer with water to seal the new anodized layer.
Claims
exact text as granted — not AI-modifiedWhat is claimed as new and desired to be protected by Letters Patent of the United States is:
1 . A bipolar ESC having a front surface and a back surface, the front surface having an anodized layer comprising a first layer of Al 2 O 3 and a second layer of Al 2 O 3 ,
wherein the first layer of Al 2 O 3 has a first thickness and a first density, wherein the second layer of Al 2 O 3 has a second thickness and a second density, wherein the first thickness is less than the second thickness, and wherein the first density is greater than the second density.
2 . The bipolar ESC of claim 1 , wherein the second layer of Al 2 O 3 is a layer of porous Al 2 O 3 treated with hot deionized water to create AlO(OH).
3 . The bipolar ESC of claim 1 , wherein the second layer of Al 2 O 3 is a layer of porous Al 2 O 3 treated with water to create AlO(OH) by reacting the second layer of porous Al 2 O 3 with the water to create boehmite.
4 . The bipolar ESC of claim 1 , wherein the first layer is under the second layer, the first layer has a thickness of about 750 to 800 angstroms and the second layer has a thickness of about 2 mils.
5 . The bipolar ESC of claim 1 , wherein the anodized layer has a dielectric constant of about 10.
6 . The bipolar ESC of claim 1 , wherein the second layer consists essentially of pore-free AlO(OH).
7 . The bipolar ESC of claim 1 , wherein the second layer has an exposed surface on which a semiconductor wafer can be electrostatically clamped.
8 . The bipolar ESC of claim 1 , wherein the anodized layer has a consistent dielectric constant effective to avoid failure associated with chucking or de-chucking wafers thereon.
9 . The bipolar ESC of claim 1 , wherein the anodized layer is an anodized surface of an aluminum alloy.Join the waitlist — get patent alerts
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