Processing systems and methods for halide scavenging

Abstract

Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

What is claimed is: 
     
         1 . A computing system electronically coupled with and configured to provide operating instructions to a substrate processing system, the computing system comprising:
 one or more processors; and   a memory device communicatively coupled with the one or more processors and having sets of instructions thereon which when executed by the one or more processors cause the substrate processing system to:
 transfer a substrate from a holding chamber to a loading chamber with a first transfer device; 
 evacuate the loading chamber such that the substrate is maintained in a vacuum environment; 
 transfer the substrate from the evacuated loading chamber to a process chamber with a second transfer device; 
 transfer the substrate from the process chamber to a treatment chamber in vertical alignment to and coupled with the loading chamber with the second transfer device; 
 transfer the substrate from the treatment chamber to the loading chamber with the second transfer device; 
 remove the vacuum conditions from the loading chamber; and 
 transfer the substrate from the loading chamber to the holding chamber with the first transfer device. 
   
     
     
         2 . The computer system of  claim 1 , wherein the computer system is further electronically coupled with and configured to provide instructions to a gas delivery system. 
     
     
         3 . The computer system of  claim 2 , wherein the instructions, when executed by the one or more processors, further cause the gas delivery system to provide at least one precursor to the process chamber. 
     
     
         4 . The computer system of  claim 3 , wherein the instructions, when executed by the one or more processors, further cause the substrate processing system to heat the loading chamber from a first temperature up to a second temperature of greater than or about 200° C. 
     
     
         5 . The computer system of  claim 1 , wherein the treatment chamber is configured to perform a scavenging operation to remove halide species from a silicon oxide material. 
     
     
         6 . The computer system of  claim 5 , wherein the scavenging operation comprises a plasma process. 
     
     
         7 . The computer system of  claim 5 , wherein the scavenging operation comprises an e-beam treatment. 
     
     
         8 . The computer system of  claim 5 , wherein the scavenging operation comprises a UV treatment. 
     
     
         9 . The computer system of  claim 1 , wherein the instructions, when executed by the one or more processors, further cause the substrate processing system to continuously purge the loading chamber with an inert fluid such that the loading chamber comprises an inert environment. 
     
     
         10 . The computer system of  claim 1 , wherein the instructions, when executed by the one or more processors, further cause the substrate processing system to transfer the substrate from the loading chamber to a storage chamber with the first transfer device, wherein the storage chamber is a separate chamber from the loading chamber. 
     
     
         11 . The computer system of  claim 1 , wherein the instructions, when executed by the one or more processors, further cause the substrate processing system to heat the substrate to a first temperature for a first period of time subsequently to transferring the substrate to the loading chamber 
     
     
         12 . The computer system of  claim 1 , wherein the process chamber comprises a first process chamber, and the first process chamber is configured to perform an oxide etching process. 
     
     
         13 . The computer system of  claim 12 , wherein the instructions, when executed by the one or more processors, further cause the substrate processing system to transfer the substrate from the first process chamber to a second process chamber prior to transferring the substrate to the loading chamber. 
     
     
         14 . The computer system of  claim 13 , wherein the second process chamber is configured to perform a silicon etching process. 
     
     
         15 . A substrate processing system comprising:
 a plurality of holding chambers;   a plurality of loading chambers configured to receive substrates into a vacuum environment;   an interface section having at least two interface transfer devices configured to deliver substrates between the plurality of holding chambers coupled with the interface section at a first location of the interface section and the plurality of loading chambers coupled with the interface section at a second location of the interface section opposite the plurality of holding chambers;   a treatment chamber positioned in vertical alignment to and coupled with at least one of the plurality of loading chambers;   a plurality of process chambers; and   a process transfer device configured to deliver a substrate between any of the plurality of loading chambers and any of the plurality of processing chambers while maintaining the substrate under vacuum conditions, wherein the process transfer device is further configured to deliver substrates vertically to the treatment chamber.   
     
     
         16 . The substrate processing system of  claim 15 , wherein the loading chambers and process chambers are all on a first elevational plane of the substrate processing system, and wherein the treatment chamber is on a second elevational plane of the substrate processing system above the first elevational plane of the substrate processing system.