Sputter source for semiconductor process chambers

Abstract

Embodiments of a sputter source for semiconductor process chambers are provided herein. In some embodiments, a sputter source for a semiconductor process chamber may include: a target comprising a magnetic material to be deposited on a substrate, the magnetic material including a front surface where material is to be sputtered and an opposing back surface; and an outer magnet disposed proximate a back surface of the target and arranged symmetrically with respect to a central axis of the target, wherein the target has an annular groove formed in the back surface of the target disposed proximate the outer magnet to reduce a magnetic permeability of a region of the target proximate the outer magnet, wherein the groove is an unfilled v-shaped groove having an inner angle greater than 90 degrees.

1 . A sputter source for a semiconductor process chamber, comprising:
 a target comprising a magnetic material to be deposited on a substrate, the magnetic material including a front surface where material is to be sputtered and an opposing back surface, wherein the target includes a central axis passing through and normal to the front and back surfaces of the target; and   an outer magnet disposed proximate a back surface of the target and arranged axisymmetrically with respect to the central axis of the target, wherein the target has an annular groove formed in the back surface of the target disposed proximate the outer magnet to reduce a magnetic permeability of a region of the target proximate the outer magnet, wherein the groove is an unfilled v-shaped groove having an inner angle greater than 90 degrees.   
     
     
         2 . The sputter source of  claim 1 , wherein the outer magnet is disposed proximate the back surface of the target such that at least a portion of a magnetic field formed by the outer magnet has an orientation that is substantially perpendicular to the back surface of the target. 
     
     
         3 . The sputter source of  claim 1 , further comprising:
 an inner magnet disposed proximate the back surface of the target proximate the central axis of the target.   
     
     
         4 . The sputter source of  claim 3 , wherein the inner magnet is a ring shaped magnet disposed symmetrically about the central axis of the target. 
     
     
         5 . The sputter source of  claim 3 , further comprising:
 a magnetic backing plate disposed on a side of the inner magnet and outer magnet opposite the target.   
     
     
         6 . The sputter source of  claim 1 , further comprising:
 a backing plate coupled to the back surface of the target.   
     
     
         7 . The sputter source of  claim 6 , wherein the backing plate comprises one or more channels formed within the backing plate configured to flow a temperature control fluid through the backing plate to control a temperature of the target. 
     
     
         8 . The sputter source of  claim 6 , further comprising a cooling plate disposed between the backing plate and the outer magnet, the cooling plate having one or more channels formed within the cooling plate configured to flow a temperature control fluid through the cooling plate to control a temperature of the target. 
     
     
         9 . The sputter source of  claim 1 , wherein the outer magnet comprises a plurality of outer magnets symmetrically disposed about the central axis of the target. 
     
     
         10 - 20 . (canceled) 
     
     
         21 . The sputter source of  claim 1 , wherein the annular groove is disposed beneath the outer magnet. 
     
     
         22 . A sputter source for a semiconductor process chamber, comprising:
 a target comprising a magnetic material to be deposited on a substrate, the magnetic material including a front surface where material is to be sputtered and an opposing back surface;   an annular outer magnet disposed proximate a back surface of the target and axisym metrically arranged with respect to a central axis of the target; and   an annular groove formed in the back surface of the target disposed beneath the outer magnet, wherein the groove is an unfilled v-shaped groove having an inner angle greater than 90 degrees.   
     
     
         23 . The sputter source of  claim 22 , further comprising:
 a backing plate coupled to the back surface of the target.   
     
     
         24 . The sputter source of  claim 22 , further comprising:
 a top plate disposed atop the outer magnet; and   a bottom ring disposed beneath the outer magnet.   
     
     
         25 . The sputter source of  claim 22 , wherein the outer magnet comprises a plurality of outer magnets axisymmetrically disposed about the central axis of the target. 
     
     
         26 . The sputter source of  claim 22 , further comprising:
 an inner magnet disposed proximate the back surface of the target proximate the central axis of the target.   
     
     
         27 . The sputter source of  claim 22 , wherein the annular groove is the only annular groove formed in the back surface of the target. 
     
     
         28 . A sputter source for a semiconductor process chamber, comprising:
 a target comprising a magnetic material to be deposited on a substrate, the magnetic material including a front surface where material is to be sputtered and an opposing back surface, wherein the target includes a central axis passing through and normal to the front and back surfaces of the target;   a backing plate coupled to the back surface of the target;   an inner magnet disposed proximate the back surface of the target proximate the central axis of the target, wherein the inner magnet is a ring shaped magnet disposed axisym metrically about the central axis of the target;   a plurality of outer magnets disposed proximate a back surface of the target and axisym metrically arranged in a ring about the central axis of the target; and   an annular groove formed in the back surface of the target disposed beneath the plurality of outer magnets, wherein the groove is an unfilled v-shaped groove having an inner angle greater than 90 degrees.   
     
     
         29 . The sputter source of  claim 28 , further comprising:
 a top plate disposed atop the plurality of outer magnets and the inner magnet;   a bottom plate disposed beneath the inner magnet; and   a bottom ring disposed beneath the plurality of outer magnets.   
     
     
         30 . The sputter source of  claim 28 , wherein the annular groove is the only annular groove formed in the back surface of the target. 
     
     
         31 . The sputter source of  claim 28 , further comprising:
 a first spacer disposed between the plurality of outer magnets and the backing plate; and   a second spacer disposed between the inner magnet and the backing plate.